Impact of the Gate Material on the Deep Levels in a-Si:H/c-Si Metal-Insulator-Semiconductor Capacitors

2015 ◽  
Vol 242 ◽  
pp. 61-66
Author(s):  
Eddy Simoen ◽  
Valentina Ferro ◽  
Barry O’Sullivan
Keyword(s):  
Minority Carrier ◽  
Crystalline Silicon ◽  
Deep Level ◽  
Silicon Layer ◽  
Si Substrate ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Transient Spectroscopy ◽  
P Type ◽  
Mis Capacitors

Deep Level Transient Spectroscopy (DLTS) has been applied to Metal-Insulator-Semiconductor (MIS) capacitors, consisting of a p+ or n+ a-Si:H gate on an intrinsic i-a-Si:H passivation layer deposited on crystalline silicon n-or p-type substrates. It is shown that the type of gate has a pronounced impact on the obtained spectra, whereby both the kind of defects (dangling bonds at the a-Si:H/(100) c-Si interface (Pb0 defects) or in the amorphous silicon layer (D defects) and their relative importance (peak amplitude) may be varied. The highest trap densities have been found for the p+ a-Si:H gate capacitors on an n-type Si substrate. In addition, the spectra may exhibit unexpected negative peaks, suggesting minority carrier capture. These features are tentatively associated with interface states at the p+ or n+ a-Si:H/i-a-Si:H interface. Their absence in Al-gate capacitors is in support of this hypothesis.

Conductance Transients Study of Slow Traps in Al/SiNx:H/Si and Al/SiNx:H/InP Metal-Insulator-Semiconductor Structures

1997 ◽  
Vol 500 ◽  
Author(s):  
S. Dueñas ◽  
R. Peláez ◽  
E. Castán ◽  
J. Barbolla ◽  
I. Mártil ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Electron Cyclotron Resonance ◽  
Deep Level ◽  
Perfect Agreement ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Semiconductor Interfaces ◽  
Interfacial Defects ◽  
Transient Spectroscopy ◽  
Resonance Plasma

ABSTRACTWe have obtained Al/SiNx:H/Si and Al/SiNx:H/InP Metal-Insulator-Semiconductor devices by directly depositing silicon nitride thin films on silicon and indium phosphide wafers by the Electron Cyclotron Resonance Plasma method at 200°C. The electrical properties of the structures were first analyzed by Capacitance-Voltage measurements and Deep-Level Transient Spectroscopy (DLTS). Some discrepancies in the absolute value of the interface trap densities were found. Later on, Admittance measurements were carried out and room and low temperature conductance transients in the silicon nitride/semiconductor interfaces were found. The shape of the conductance transients varied with the frequency and temperature at which they were obtained. This behavior, as well as the previously mentioned discrepancies, are explained in terms of a disorder-induced gap-state continuum model for the interfacial defects. A perfect agreement between experiment and theory is obtained proving the validity of the model.

Investigating Minority-Carrier Traps in p-type Cu(InGa)Se2 Using Deep Level Transient Spectroscopy

2005 ◽  
Vol 865 ◽  
Author(s):  
Steven W. Johnston ◽  
Jehad A. M. AbuShama ◽  
Rommel Noufi
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Minority Carrier ◽  
Deep Level ◽  
Thermionic Emission ◽  
Small Peak ◽  
Carrier Traps ◽  
Transient Spectroscopy ◽  
Lower Temperature ◽  
And Shifts ◽  
P Type

AbstractMeasurements of p-type Cu(InGa)Se2 (CIGS) using deep-level transient spectroscopy (DLTS) show peaks associated with minority-carrier traps, even though data were collected using reverse bias conditions not favorable to injecting minority-carrier electrons. These DLTS peaks occur in the temperature range of 50 to 150 K for the rate windows used and correspond to electron traps having activation energies usually in the range of 0.1 to 0.2 eV for alloys of CIS, CGS, and CIGS. The peak values also depend on the number of traps filled. For short filling times of 10 μs to 100 μs, a small peak appears. As the DLTS filling pulse width increases, the peak increases in response to more traps being filled, but it also broadens and shifts to lower temperature suggesting that a possible series of trap levels, perhaps forming a defect band, are present. The peaks usually saturate in a timeframe of seconds. These filling times are sufficient for electrons to fill traps near the interface from the n-type side of the device due to a thermionic emission current. Admittance spectroscopy data for the same samples are shown for comparison.

Preparation and electrical properties of heterojunctions of ZnO on Zn3P2 and CdTe

1989 ◽  
Vol 67 (4) ◽  
pp. 448-455 ◽  
Author(s):  
M. Ginting ◽  
J. D. Leslie
Keyword(s):  
Single Crystal ◽  
Deep Level ◽  
Photovoltaic Performance ◽  
Polycrystalline Film ◽  
Metal Insulator ◽  
Measurement And Analysis ◽  
Transient Spectroscopy ◽  
P Type ◽  
Zno Single Crystal ◽  
High Series

"Heterojunctions" have been fabricated by the reactive evaporation of thin film n-type ZnO onto p-type single crystal Zn3P2, polycrystalline films of Zn3P2, and single crystal CdTe. The photovoltaic response of the n-ZnO – single crystal p-CdTe devices was good, that of the n-ZnO – single crystal p-Zn3P2 devices was poor, and that of the n-ZnO – p-Zn3P2 polycrystalline film devices was nonexistent. The ideality factor n of all devices studied was greater than two. On the basis of 1/C2 vs. V results, the n-ZnO – single crystal p-Zn3P2 devices behaved most like Schottky barrier devices, whereas the n-ZnO – p-Zn3P2 polycrystalline film devices, and the n-ZnO – p-single crystal CdTe "heterojunctions" behaved most like metal–insulator–semiconductor devices. The high series resistance of all devices had to be considered in the measurement and analysis, and it limited the photovoltaic performance. Deep-level transient spectroscopy measurements indicated majority (hole) traps in the CdTe and Zn3P2 with activation energies in agreement with previous measurements in the literature.

Observed trapping of minority-carrier electrons in p-type GaAsN during deep-level transient spectroscopy measurement

2005 ◽  
Vol 86 (7) ◽  
pp. 072109 ◽  
Author(s):  
S. W. Johnston ◽  
S. R. Kurtz ◽  
D. J. Friedman ◽  
A. J. Ptak ◽  
R. K. Ahrenkiel ◽  
...  
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Minority Carrier ◽  
Deep Level ◽  
Spectroscopy Measurement ◽  
Transient Spectroscopy ◽  
P Type

Hydrogen Decoration of Vacancy Related Complexes in Hydrogen Implanted Silicon

2011 ◽  
Vol 178-179 ◽  
pp. 192-197 ◽  
Author(s):  
Helge Malmbekk ◽  
Lasse Vines ◽  
Edouard V. Monakhov ◽  
Bengt Gunnar Svensson
Keyword(s):  
Conduction Band ◽  
Deep Level Transient Spectroscopy ◽  
Minority Carrier ◽  
Deep Level ◽  
Conduction Band Edge ◽  
Absolute Concentrations ◽  
Transient Spectroscopy ◽  
P Type ◽  
Induced Defects ◽  
Irradiation Induced Defects

Interaction between hydrogen (H) and irradiation induced defects in p-type silicon (Si) have been studied in H implanted pn-junctions, using deep level transient spectroscopy (DLTS), as well as minority carrier transient spectroscopy (MCTS). Two H related levels at Ev+0.27 eV and Ec-0.32 eV have been observed (Ev and Ec denote the valence and conduction band edge, respectively). Both levels form after a 10 min anneal at 125C, concurrent with the release of H from the boron-hydrogen (B-H) complex. The correlated formation rates and absolute concentrations of the two levels support the notion that they are due to the same defect. In addition, a level at Ec-0.45 eV is observed and discussed in terms of vacancy-hydrogen related defects.

scholarly journals Characterization of a Dominant Electron Trap in GaNAs Using Deep-Level Transient Spectroscopy

2005 ◽  
Vol 891 ◽  
Author(s):  
Steven W. Johnston ◽  
Sarah R. Kurtz ◽  
Richard S. Crandall
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Minority Carrier ◽  
Deep Level ◽  
Chemical Vapor ◽  
Electron Trap ◽  
Organic Chemical ◽  
Conduction Band Offset ◽  
Carrier Traps ◽  
Transient Spectroscopy ◽  
P Type

ABSTRACTDilute-nitrogen GaNAs epitaxial layers grown by metal-organic chemical vapor deposition were characterized by deep-level transient spectroscopy (DLTS). For all samples, the dominant DLTS signal corresponds to an electron trap having an activation energy of about 0.25 to 0.35 eV. The minority-carrier trap density in the p-type material is quantified based on computer simulation of the devices. The simulations show that only about 2% of the traps in the depleted layer are filled during the transient. The fraction of the traps that are filled depends strongly on the depth of the trap, but only weakly on the doping of the layers and on the conduction-band offset. The simulations provide a pathway to obtain semi-quantitative data for analysis of minority-carrier traps by DLTS.

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