Microstructural Characterisation of RF Magnetron Sputtered ZnO Thin Films on SiC

2004 ◽  
Vol 99-100 ◽  
pp. 123-126 ◽  
Author(s):  
A. Trinchi ◽  
W. Wlodarski ◽  
Sandro Santucci ◽  
D. Di Claudio ◽  
Maurizio Passacantando ◽  
...  

The microstructural characterization of r.f. magnetron sputtered ZnO thin films deposited on 6H-SiC is presented with a comprehensive investigation of their properties as a function of annealing temperature and film thickness. These structures, with some modifications, are utilised as Schottky diode hydrogen gas sensors and Surface Acoustic Wave (SAW) devices.

2008 ◽  
Vol 6 (5) ◽  
pp. 699-704 ◽  
Author(s):  
P. K. Basu ◽  
S. K. Jana ◽  
M. K. Mitra ◽  
H. Saha ◽  
S. Basu

Author(s):  
Fouaz Lekoui ◽  
Salim Hassani ◽  
Mohammed Ouchabane ◽  
Hocine Akkari ◽  
Driss Dergham ◽  
...  

2004 ◽  
Vol 103 (1-2) ◽  
pp. 129-135 ◽  
Author(s):  
A. Trinchi ◽  
S. Kaciulis ◽  
L. Pandolfi ◽  
M.K. Ghantasala ◽  
Y.X. Li ◽  
...  

Open Physics ◽  
2011 ◽  
Vol 9 (5) ◽  
Author(s):  
Azhar Haidry ◽  
Peter Schlosser ◽  
Pavol Durina ◽  
Marian Mikula ◽  
Milan Tomasek ◽  
...  

AbstractTitanium dioxide thin films are extensively studied for applications in solid state gas sensor devices. Their gas sensing properties are strongly dependent on deposition technique, annealing temperature, film thickness and consequent properties like crystalline structure, grain size or amount of defects and impurities. In this work we report the gas sensing properties of TiO2 thin films prepared by reactive magnetron sputtering technique and subsequently annealed at temperatures 600°C and 900°C. The films were exposed to different concentrations of H2 gas up to 10 000 ppm. Their sensitivity to gas at various operating temperatures, ranging from 250°C to 450°C, was obtained by measuring their resistance.


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