Multilayer Ferrite Inductor Substrate for Ceramic-Based High Current Point-of-Load (POL) Converter

2016 ◽  
Vol 2016 (CICMT) ◽  
pp. 000039-000046
Author(s):  
Wenli Zhang ◽  
Yipeng Su ◽  
Fred C. Lee

Abstract High power-density and high efficiency are the two driving forces for point-of-load (POL) converters used in portable electronics and other applications where system miniaturization is required. Discrete passive components, especially bulky inductors, have become the bottleneck for downsizing POL converters. Low-temperature sintered Ni-Cu-Zn ferrite tapes for multilayer chip inductors have been widely studied and used in high-frequency power electronics applications. In our previous study, a low-profile, planar inductor substrate with lateral flux pattern was fabricated using mixed commercial low-fire Ni-Cu-Zn ferrite tapes and compatible low temperature co-fired ceramic (LTCC) processing. However, thermal interface material was used between active circuit board and passive layer (ferrite substrate), which increases the total volume of the converter and becomes a potential threat for reliability due to the mismatch of coefficient of thermal expansion among different layers. Additionally, this hybrid integration method requires labor-intensive manual steps which are not compatible with cost-sensitive power electronics market. A fully ceramic-based POL module with integrated multilayer ferrite inductor has been proposed. The circuit and other components are designed to be directly built on top of the multilayer ferrite inductor substrate. This presented work focuses on the development of the multilayer ceramic substrate with embedded planar, lateral-flux inductor by co-firing of ferrite and dielectric tapes with conductor paste. Commercial dielectric LTCC and ferrite tapes were chosen for the fabrication of multilayer ferrite inductor substrate. Different silver pastes were co-fired with ceramic tapes to form the inductor winding. The sintering behavior and compatibility of dielectric, magnetic, and conductive components in one co-firing process was studied in order to realize a cohesive multilayer ceramic substrate. The embedded inductors present lower inductance than pure ferrite inductors sintered alone using the same profile when the output current is smaller than 10 A. The inductance of both types of inductors are very similar when output current is above 15 A. The inductor embedded in dielectric tapes exhibits higher core loss density than its counterpart. Future work will focus on the integration of high current POL module using this developed multilayer ferrite inductor substrate.

2009 ◽  
Vol 421-422 ◽  
pp. 289-292 ◽  
Author(s):  
Atsuyuki Okada ◽  
Takashi Ogihara

Several types of Ag powder were used as electrode paste for a multilayer ceramic substrate. The shrinkage behavior of the silver powders was investigated during the sintering. Bending and cracking were frequently observed on the substrate when coarse powders that show a broad size distribution and aggregation were used. The shrinkage curve of the Ag paste obtained by spray pyrolysis agreed well with that of the substrate. Furthermore, the electrical properties of the Ag paste were also determined. The resistivity of a silver electrode sintered at 900°C was about 2.00×10-6 Ω・cm.


1993 ◽  
Vol 9 (1) ◽  
pp. 24-30
Author(s):  
Kyouichi Nakai ◽  
Kiyohito Shibata ◽  
Shuichi Kawaminami ◽  
Shigeru Takahashi

Materials ◽  
2021 ◽  
Vol 14 (12) ◽  
pp. 3365
Author(s):  
Justyna Zygmuntowicz ◽  
Magdalena Gizowska ◽  
Justyna Tomaszewska ◽  
Paulina Piotrkiewicz ◽  
Radosław Żurowski ◽  
...  

This work focuses on research on obtaining and characterizing Al2O3/ZrO2 materials formed via slip casting method. The main emphasis in the research was placed on environmental aspects and those related to the practical use of ceramic materials. The goal was to analyze the environmental loads associated with the manufacturing of Al2O3/ZrO2 composites, as well as to determine the coefficient of thermal expansion of the obtained materials, classified as technical ceramics. This parameter is crucial in terms of their practical applications in high-temperature working conditions, e.g., as parts of industrial machines. The study reports on the four series of Al2O3/ZrO2 materials differing in the volume content of ZrO2. The sintering process was preceded by thermogravimetric measurements. The fabricated and sintered materials were characterized by dilatometric study, scanning electron microscopy, X-ray diffraction, and stereological analysis. Further, life cycle assessment was supplied. Based on dilatometric tests, it was observed that Al2O3/ZrO2 composites show a higher coefficient of thermal expansion than that resulting from the content of individual phases. The results of the life cycle analysis showed that the environmental loads (carbon footprint) resulting from the acquisition and processing of raw materials necessary for the production of sinters from Al2O3 and ZrO2 are comparable to those associated with the production of plastic products such as polypropylene or polyvinyl chloride.


2011 ◽  
Vol 324 ◽  
pp. 437-440
Author(s):  
Raed Amro

There is a demand for higher junction temperatures in power devices, but the existing packaging technology is limiting the power cycling capability if the junction temperature is increased. Limiting factors are solder interconnections and bond wires. With Replacing the chip-substrate soldering by low temperature joining technique, the power cycling capability of power modules can be increased widely. Replacing also the bond wires and using a double-sided low temperature joining technique, a further significant increase in the life-time of power devices is achieved.


2015 ◽  
Vol 1736 ◽  
Author(s):  
M. A. Reshchikov ◽  
J.D. McNamara ◽  
A. Usikov ◽  
H. Helava ◽  
Yu. Makarov

ABSTRACTWe have studied photoluminescence (PL) from undoped GaN films grown by HVPE technique on sapphire. Several defect-related PL bands are observed in the low-temperature PL spectrum. The concentrations of the defects responsible for these PL bands are determined from the dependence of PL intensity on excitation intensity. The RL band with a maximum at 1.8 eV is often the dominant PL band in HVPE GaN. It is caused by an unknown defect with the concentration of up to ∼1017 cm-3. The concentrations of defects responsible for other defect-related PL bands rarely exceed 1015 cm-3.


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