scholarly journals Stackable SiC-Embedded Ceramic Packages for High-Voltage and High-Temperature Power Electronic Applications

2019 ◽  
Vol 16 (4) ◽  
pp. 176-181
Author(s):  
Hoang Linh Bach ◽  
Daniel Dirksen ◽  
Christoph Blechinger ◽  
Tobias Maximilian Endres ◽  
Christoph Friedrich Bayer ◽  
...  
Keyword(s):  
High Temperature ◽  
High Voltage ◽  
Printed Circuit Board ◽  
Oil And Gas ◽  
Semiconductor Devices ◽  
Wide Bandgap ◽  
Circuit Board ◽  
Power Electronic ◽  
Sinter Material ◽  
Promising Solution

Abstract This study encompasses the development of a high-voltage and high-temperature–capable package for power electronic applications based on the embedding of silicon carbide (SiC) semiconductor devices in the ceramic circuit carrier such as the direct bonded copper (DBC) substrate. By sealing semiconductor devices into DBC substrates, high temperature, high voltage, and high current capability as well as high corrosion resistance can be achieved compared with the state-of-the-art printed circuit board (PCB) embedding technology. The power devices are attached with high-temperature stable solder and sinter material and are surrounded by thermal conductive ceramic and high-temperature–capable potting materials that enable the complete package to operate at 250°C or above. Furthermore, the single embedded packages can be stacked together to multilevel DBC topologies with increased voltage blocking characteristics. Thus, current limits of the PCB and low-temperature cofired ceramic–based multilayer solutions are exceeded and will be confirmed in the course of this study. This package is designed to carry out the maximal performance of SiC and future wide bandgap devices. It is a promising solution not only for applications in harsh ambient environments such as aerospace and turbine, geothermal well logging, and downhole oil and gas wells but also for hybrid electric/electric vehicle and energy conversion.

Stackable SiC Embedded Ceramic Packages for High Voltage and High Temperature Power Electronics Applications

2019 ◽  
Vol 2019 (HiTen) ◽  
pp. 000028-000033
Author(s):  
Hoang Linh Bach ◽  
Daniel Dirksen ◽  
Christoph Blechinger ◽  
Tobias Maximilian Endres ◽  
Christoph Friedrich Bayer ◽  
...  
Keyword(s):  
High Temperature ◽  
High Voltage ◽  
Printed Circuit Board ◽  
Semiconductor Devices ◽  
Wide Band ◽  
Circuit Board ◽  
Power Devices ◽  
Wide Band Gap ◽  
Sinter Material ◽  
Promising Solution

Abstract This paper encompasses the development of a high voltage and high temperature capable package for power electronic applications based on the embedding of SiC (silicon carbide) semiconductor devices in ceramic circuit carrier such as direct bonded copper (DBC) substrate. By sealing the semiconductor devices into DBC substrates, high temperature, high voltage and high current capability as well as high corrosion resistance can be achieved compared to state-of-the-art PCB (printed circuit board) embedding technology. The power devices are attached with high temperature stable solder and sinter material, and are surrounded by thermal conductive ceramic and high temperature capable potting materials that enable the complete package to operate at 250 °C or above. Furthermore, the single embedded packages can be stacked together to multilevel DBC topologies with increased voltage blocking characteristics. Thus, current limits of PCB and LTCC (low-temperature co-fired ceramic) based multilayer solutions are exceeded and will be confirmed in the course of this study. This package is designed to carry out the maximal performance of SiC and future WBG (wide band-gap) devices. It is a promising solution for applications in harsh ambient environment such as aerospace and turbine, geothermal well logging, down hole-well oil & gas, but also applicable for HEV/EV (hybrid electric/electric vehicle) and energy conversion.

scholarly journals Research on Small Square PCB Rogowski Coil Measuring Transient Current in the Power Electronics Devices

Sensors ◽  
2019 ◽  
Vol 19 (19) ◽  
pp. 4176 ◽  
Author(s):  
Chaoqun Jiao ◽  
Juan Zhang ◽  
Zhibin Zhao ◽  
Zuoming Zhang ◽  
Yuanliang Fan
Keyword(s):  
Power Electronics ◽  
Printed Circuit Board ◽  
Electronic Devices ◽  
Rogowski Coil ◽  
Bipolar Transistors ◽  
Circuit Board ◽  
Power Electronic ◽  
Insulated Gate Bipolar Transistors ◽  
Printed Circuit ◽  
Internal Structures

With the development of China’s electric power, power electronics devices such as insulated-gate bipolar transistors (IGBTs) have been widely used in the field of high voltages and large currents. However, the currents in these power electronic devices are transient. For example, the uneven currents and internal chip currents overshoot, which may occur when turning on and off, and could have a great impact on the device. In order to study the reliability of these power electronics devices, this paper proposes a miniature printed circuit board (PCB) Rogowski coil that measures the current of these power electronics devices without changing their internal structures, which provides a reference for the subsequent reliability of their designs.

Origami for Tight Spaces - 3D 250C PCB Assemblies for Control Systems

2019 ◽  
Vol 2019 (HiTen) ◽  
pp. 000034-000038 ◽  
Author(s):  
Piers Tremlett ◽  
Phil Elliot ◽  
Pablo Tena
Keyword(s):  
High Temperature ◽  
Printed Circuit Board ◽  
Real Life ◽  
Circuit Board ◽  
Calibration Data ◽  
Engine Fuel ◽  
Sensors And Actuators ◽  
Pcb Assembly ◽  
Operational Life ◽  
Mems Technology

Printed circuit board (PCB) assemblies must fit into unusual spaces for many real-life, high temperature applications such as sensors and actuators. This paper details the design and manufacture of a complex control circuit for a jet engine fuel flow valve. “Origami” was needed to fit this control circuitry into the tight space in the valve, this was achieved using a high temperature flex rigid PCB assembly. The valve was mounted on a hot section of the engine, and the assembly was tested for its capability to operate at 178°C and withstand multiple thermal cycles of −55°C and 175°C during its operational life. Various component joining media were investigated to extend the life of the assembly. The project also developed a one-time programmable (OTP) memory aimed at up to 300°C operation for on board memory to provide calibration data or boot memory for high temperature microcontrollers or processors. The device was based on Micro-Electro-Mechanical Systems (MEMS) technology.

Design of a Low Inductance Power Module Based on Low Temperature Co-fired Ceramic

2016 ◽  
Vol 2016 (CICMT) ◽  
pp. 000032-000038
Author(s):  
Atanu Dutta ◽  
Simon S. Ang
Keyword(s):  
Low Temperature ◽  
Coefficient Of Thermal Expansion ◽  
Semiconductor Devices ◽  
Building Blocks ◽  
Wide Bandgap ◽  
Switching Frequency ◽  
Full Potential ◽  
Power Electronic ◽  
Power Module ◽  
Parasitic Inductance

Abstract Efficient, compact, and reliable power electronic modules are building blocks of modern day power electronic systems. In recent times, wide bandgap semiconductor devices, such as, silicon carbide (SiC) and gallium nitride (GaN), are widely investigated and used in the power electronic modules to realize power dense, highly efficient, and fast switching modules for various applications. For high power applications is it required to parallel and series several devices to achieve high current and high voltage specifications, which results in larger current conducting traces. One of the major obstacles in using these wideband gap power semiconductor devices are the internal module stray inductance that is associated with these current conducting traces. With increasing demand for higher switching frequency, the internal module parasitic inductance must be reduced to as minimum as possible in order to utilize the full potential of the wide bandgap devices. A multi-layer approach of low-temperature co-fired ceramic (LTCC) to package the wide bandgap devices is investigated. The multi-layer design freedom by using LTCC can be utilized to reduce the footprint of the overall power module, electrical interconnects, hence, reducing the package parasitic inductance. LTCC also facilitates high temperature operations and has a coefficient of thermal expansion matching with wide bandgap devices. In this paper, we report on a LTCC based power module design where LTCC is utilized as an isolation layer between the source and the drain of the power devices. A simulation based parasitic inductance analysis and electro-thermal-mechanical study is performed using ANSYS Workbench Tools to investigate the feasibility of this LTCC based design.

High-Temperature Characterization and Comparison of 1.2 kV SiC Power Semiconductor Devices

2013 ◽  
Vol 10 (4) ◽  
pp. 138-143 ◽  
Author(s):  
Christina DiMarino ◽  
Zheng Chen ◽  
Dushan Boroyevich ◽  
Rolando Burgos ◽  
Paolo Mattavelli
Keyword(s):  
High Temperature ◽  
Semiconductor Devices ◽  
Wide Bandgap ◽  
Current Gain ◽  
Dynamic Characterization ◽  
Power Semiconductor ◽  
Power Semiconductor Devices ◽  
Unbiased Manner ◽  
Insight Into

Focused on high-temperature (200°C) operation, this paper seeks to provide insight into state-of-the-art 1.2 kV silicon carbide (SiC) power semiconductor devices; namely the MOSFET, BJT, SJT, and normally-off JFET. This is accomplished by characterizing and comparing the latest generation of these wide bandgap devices from various manufacturers (Cree, GE, ROHM, Fairchild, GeneSiC, and SemiSouth). To carry out this study, the static and dynamic characterization of each device is performed under increasing temperatures (25–200°C). Accordingly, this paper describes the experimental setup used and the different measurements conducted, which include: threshold voltage, current gain, specific on-resistance, and the turn-on and turn-off switching energies of the devices. The driving method used for each device is also detailed. Key trends and observations are reported in an unbiased manner throughout the paper and summarized in the conclusion.

scholarly journals Evaluation of printed-circuit boards materials for high temperature operation

2017 ◽  
Vol 2017 (HiTEN) ◽  
pp. 000057-000062
Author(s):  
Oriol Aviño-Salvado ◽  
Wissam Sabbah ◽  
Cyril Buttay ◽  
Hervé Morel ◽  
Pascal Bevilacqua
Keyword(s):  
High Temperature ◽  
Printed Circuit Boards ◽  
Printed Circuit Board ◽  
Circuit Board ◽  
Circuit Boards ◽  
Printed Circuit ◽  
Physical Measurements ◽  
Epoxy Material ◽  
High Temperature Operation

ABSTRACT This article presents the long term (1000 h) behaviour of two printed-circuit board materials (Panasonic R1755V, a high-TG glass-epoxy composite and Arlon 85N, a polyimide-based laminate) stored at high temperature (190 °C). Tests are performed in air and in nitrogen atmospheres. Electrical and physical measurements are performed regularly (once per week). Almost no degradation is observed for both materials, when stored in nitrogen. On the contrary, the board stored in air show the consequences of ageing. This is especially true for the glass-epoxy material, which becomes unusable after 2 weeks, because of large swelling.

High-Temperature Characterization and Comparison of 1.2 kV SiC Power Semiconductor Devices

2013 ◽  
Vol 2013 (HITEN) ◽  
pp. 000082-000087 ◽  
Author(s):  
Christina DiMarino ◽  
Zheng Chen ◽  
Dushan Boroyevich ◽  
Rolando Burgos ◽  
Paolo Mattavelli
Keyword(s):  
High Temperature ◽  
Semiconductor Devices ◽  
Wide Bandgap ◽  
Current Gain ◽  
Dynamic Characterization ◽  
Power Semiconductor ◽  
Power Semiconductor Devices ◽  
Unbiased Manner ◽  
Insight Into

Focused on high-temperature (200 °C) operation, this paper seeks to provide insight into state-of-the-art 1.2 kV Silicon Carbide (SiC) power semiconductor devices; namely the MOSFET, BJT, SJT, and normally-off JFET. This is accomplished by characterizing and comparing the latest generation of these wide bandgap devices from various manufacturers (Cree, GE, Rohm, Fairchild, GeneSiC, and SemiSouth). To carry out this study, the static and dynamic characterization of each device is performed under increasing temperatures (25–200 °C). Accordingly, this paper describes the experimental setup used and the different measurements conducted, which include: threshold voltage, current gain, specific on-resistance, and the turn-on and turn-off switching energies of the devices. The driving method used for each device is also detailed. Key trends and observations are reported in an unbiased manner throughout the paper and summarized in the conclusion.

Organic Hybrids for Circuit Assemblies – Initial environmental testing of a low cost alternative to ceramic substrate based assemblies

2018 ◽  
Vol 2018 (HiTEC) ◽  
pp. 000022-000027
Author(s):  
Martin Wickham ◽  
Kate Clayton ◽  
Ana Robador ◽  
Christine Thorogood
Keyword(s):  
High Temperature ◽  
Printed Circuit Board ◽  
Mechanical Performance ◽  
Low Cost ◽  
Mechanical Damage ◽  
Organic Matrix ◽  
Organic Substrate ◽  
Ceramic Substrate ◽  
Circuit Board ◽  
Environmental Testing

Abstract There are an increasing number of electronics applications in aerospace, automotive, shale/gas and power management, which are required to operate at or above 200 °C. Organic matrix reinforced substrates such as polyimide, have maximum operating temperatures in the region of 175 °C. Reliable operation of electronics at temperatures higher than this requires a combination of performance improvements in components, interconnects and substrates. Ceramic based substrate options are based on alumina substrates with printed inks fired at ~ 600 °C and can be costly, heavy and prone to mechanical damage. Printed circuit board (PCB) options are restricted to lower working temperatures of the organic resins and degradation of their conductive copper tracks through oxidation. This paper highlights earlier work undertaken by the authors and partners to understand the deficiencies of copper-clad PCB technology and details work to develop a low cost alternative to ceramic substrate based assemblies. The authors have investigated replacing the alumina substrates with high temperature engineering thermoplastics such as PEEK. The high temperature fired inks conventionally used in hybrid circuit manufacture have been replaced with screen-printable silicone based ink systems curing at 250 °C. The specially developed electrically conductive and dielectric inks were utilised to produce a multilayer system demonstrator with high temperature compatible components attached using a high temperature conductive adhesive. Such an assembly system has the potential to benefit from reductions in substrate cost and assembly weight. Energy cost associated with manufacture are significantly reduced. In addition the organic substrate is easier to machine and form into complex shapes and offers the possibility of integrating thermal management solutions. Environmental testing has been undertaken to determine the suitability of the system to operate for extended periods at 250 °C and the results of the electrical and mechanical performance for continuous ageing of test assemblies at 250 °C will be given.

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