SEM-based X-ray tomography of sub-micrometer defects in 3D integration

2014 ◽  
Vol 2014 (1) ◽  
pp. 000641-000646
Author(s):  
D. Laloum ◽  
C. Ribière ◽  
M. Gottardi ◽  
T. Mourier ◽  
F. Lorut ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Bulk Silicon ◽  
3D Integration ◽  
Metallic Structures ◽  
X Ray ◽  
Solder Balls ◽  
Ct System ◽  
Silicon Vias ◽  
Non Destructive

3D integration is a promising technology to overcome miniaturization challenges and chips densification. It consists in increasing the number of components by realizing vertical pileups of interconnected chips. Solder balls, through silicon vias (TSVs) and copper pillars are widely used for that purpose. It is essential to characterize these metallic structures in order to validate the fabrication process and to ensure an optimal connection between the different chips. Here, X-ray tomography is proposed as a non-destructive technique to investigate metallic interconnections. In particular, the potential of an innovative computerized tomography (CT) system, the X-ray tomography hosted in a scanning electron microscope (SEM), is presented. Since sample preparation is an important step of the X-ray characterization process, the use of a Plasma Focused Ion Beam (P-FIB) to extract large chunks out of the bulk silicon is reported. We expose an original work towards systematic studies: in order to validate a new copper filling chemistry, five samples containing TSVs at various filling rates have been scanned and the 3D results are shown. Chunks containing completely filled TSVs have then been scanned and their resulting 3D reconstructions demonstrate that the instrument is able to detect 500 nm diameter voids. The advantages and limitations of this characterization method are finally pointed out.

ON THE MEASUREMENT AND INTERPRETATION OF RESIDUAL STRESS AT THE MICRO-SCALE

2010 ◽  
Vol 24 (01n02) ◽  
pp. 1-9 ◽  
Author(s):  
ALEXANDER M. KORSUNSKY ◽  
EDOARDO BEMPORAD ◽  
MARCO SEBASTIANI ◽  
FELIX HOFMANN ◽  
SARAANSH DAVE
Keyword(s):  
Residual Stress ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
X Ray Diffraction ◽  
Strain Relief ◽  
X Ray ◽  
Micro Scale ◽  
Digital Correlation ◽  
Non Destructive

In the present paper we consider two representative methods for residual stress evaluation at the micro-scale: a (semi-)destructive method involving material removal and the measurement of strain relief; and a non-destructive X-ray diffraction technique involving the use of micro-focused synchrotron X-ray beam. A recently developed strain relief approach is described using a Focused Ion Beam (FIB) to create a circular trench of progressively increasing depth around a circular "island". Residual stress is evaluated by the comparison of the strain relief (measured by digital correlation of displacements or strains) with Finite Element simulations. The technique is illustrated for a thin TiN coating layer. The second approach uses focused synchrotron X-ray beams for white beam Laue diffraction. Demonstration experiments described involve in situ loading of commercially pure nickel foil. Procedures for validation and improvement of accuracy are discussed.

3D Observation of Elemental Distribution of Si-Device using a Dedicated FIB/STEM System

2005 ◽  
Author(s):  
T. Yaguchi ◽  
M. Konno ◽  
T. Kamino ◽  
M. Ogasawara ◽  
K. Kaji ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Three Dimensional ◽  
Elemental Distribution ◽  
Multivariate Statistical ◽  
X Ray ◽  
Sample Rotation ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Elemental Maps

Abstract A technique for preparation of a pillar shaped sample and its multi-directional observation of the sample using a focused ion beam (FIB) / scanning transmission electron microscopy (STEM) system has been developed. The system employs an FIB/STEM compatible sample rotation holder with a specially designed rotation mechanism, which allows the sample to be rotated 360 degrees [1-3]. This technique was used for the three dimensional (3D) elemental mapping of a contact plug of a Si device in 90 nm technology. A specimen containing a contact plug was shaped to a pillar sample with a cross section of 200 nm x 200 nm and a 5 um length. Elemental analysis was performed with a 200 kV HD-2300 STEM equipped with the EDAX genesis Energy dispersive X-ray spectroscopy (EDX) system. Spectrum imaging combined with multivariate statistical analysis (MSA) [4, 5] was used to enhance the weak X-ray signals of the doped area, which contain a low concentration of As-K. The distributions of elements, especially the dopant As, were successfully enhanced by MSA. The elemental maps were .. reconstructed from the maps.

Failure Analysis Strategies for Multistacked Memory Devices with TSV Interconnects

2015 ◽  
Author(s):  
Frank Altmann ◽  
Christian Grosse ◽  
Falk Naumann ◽  
Jens Beyersdorfer ◽  
Tony Veches
Keyword(s):  
Failure Analysis ◽  
Focused Ion Beam ◽  
Failure Modes ◽  
Ion Beam ◽  
Memory Devices ◽  
Metallographic Cross Section ◽  
Electron Beam Induced Current ◽  
Thermal Simulations ◽  
Lock In ◽  
Non Destructive

Abstract In this paper we will demonstrate new approaches for failure analysis of memory devices with multiple stacked dies and TSV interconnects. Therefore, TSV specific failure modes are studied on daisy chain test samples. Two analysis flows for defect localization implementing Electron Beam Induced Current (EBAC) imaging and Lock-in-Thermography (LIT) as well as adapted Focused Ion Beam (FIB) preparation and defect characterization by electron microscopy will be discussed. The most challenging failure mode is an electrical short at the TSV sidewall isolation with sub-micrometer dimensions. It is shown that the leakage path to a certain TSV within the stack can firstly be located by applying LIT to a metallographic cross section and secondly pinpointing by FIB/SEM cross-sectioning. In order to evaluate the potential of non-destructive determination of the lateral defect position, as well as the defect depth from only one LIT measurement, 2D thermal simulations of TSV stacks with artificial leakages are performed calculating the phase shift values per die level.

Oxidation of Alloy-X in Subcritical, Transition, and Supercritical Water

CORROSION ◽  
10.5006/3881 ◽  
2021 ◽  
Author(s):  
Zachary Karmiol ◽  
Dev Chidambaram
Keyword(s):  
Supercritical Water ◽  
Photoelectron Spectroscopy ◽  
Focused Ion Beam ◽  
Elevated Temperatures ◽  
Subcritical Water ◽  
Ion Beam ◽  
X Ray Diffraction ◽  
X Ray ◽  
Nickel Based Superalloy ◽  
Before And After

This work investigates the oxidation of a nickel based superalloy, namely Alloy X, in water at elevated temperatures: subcritical water at 261°C and 27 MPa, the transition between subcritical and supercritical water at 374°C and 27 MPa, and supercritical water at 380°C and 27 MPa for 100 hours. The morphology of the sample surfaces were studied using scanning electron microscopy coupled with focused ion beam milling, and the surface chemistry was investigated using X-ray diffraction, Raman spectroscopy, energy dispersive X-ray spectroscopy, and X-ray photoelectron spectroscopy before and after exposure studies. Surfaces of all samples were identified to comprise of a ferrite spinel containing aluminum.

High Conductivity FIB Deposited Metal

1995 ◽  
Vol 396 ◽  
Author(s):  
P.G. Blauner ◽  
A. Wagner
Keyword(s):  
Focused Ion Beam ◽  
High Efficiency ◽  
Ion Beam ◽  
Deposition Process ◽  
Gold Deposition ◽  
X Ray ◽  
Annealing Step ◽  
Deposited Metal ◽  
Major Application ◽  
Deposition Processes

AbstractThe ion beam induced metal deposition processes now employed by commercial focused ion beam (FIB) tools all demonstrate less than optimal characteristics for use in circuit repair, a major application of these tools. In particular, the processes have low efficiencies, the metals produced have poor conductivity, and some form of clean up is generally required to remove excess material surrounding the repair site. The gold deposition process developed for x-ray mask repair, in contrast, exhibits efficiencies 10-50 times higher with significantly less material deposited in unwanted areas. Unfortunately, the conductivity of the gold is even poorer than that of materials now used for FIB circuit repair.In this paper, an annealing step which improves the conductivity of FIB deposited Au is described. Results are presented demonstrating resistivities of 5-15 μΩ-cm while maintaining the high efficiency of the gold deposition process. The suitability of the process for use in FIB circuit repair is discussed.

Imaging of retina cellular and subcellular structures using ptychographic hard X-ray tomography

2021 ◽  
Vol 134 (19) ◽  
Author(s):  
Valerie Panneels ◽  
Ana Diaz ◽  
Cornelia Imsand ◽  
Manuel Guizar-Sicairos ◽  
Elisabeth Müller ◽  
...  
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Plexiform Layer ◽  
Wild Type Mouse ◽  
Small Region ◽  
Mouse Retina ◽  
Imaging Method ◽  
Scanning Method ◽  
X Ray ◽  
Correlative Imaging

ABSTRACT Ptychographic hard X-ray computed tomography (PXCT) is a recent method allowing imaging with quantitative electron-density contrast. Here, we imaged, at cryogenic temperature and without sectioning, cellular and subcellular structures of a chemically fixed and stained wild-type mouse retina, including axons and synapses, with complete isotropic 3D information over tens of microns. Comparison with tomograms of degenerative retina from a mouse model of retinitis pigmentosa illustrates the potential of this method for analyzing disease processes like neurodegeneration at sub-200 nm resolution. As a non-destructive imaging method, PXCT is very suitable for correlative imaging. Within the outer plexiform layer containing the photoreceptor synapses, we identified somatic synapses. We used a small region inside the X-ray-imaged sample for further high-resolution focused ion beam/scanning electron microscope tomography. The subcellular structures of synapses obtained with the X-ray technique matched the electron microscopy data, demonstrating that PXCT is a powerful scanning method for tissue volumes of more than 60 cells and sensitive enough for identification of regions as small as 200 nm, which remain available for further structural and biochemical investigations.

scholarly journals Artifacts from manganese reduction in rock samples prepared by focused ion beam (FIB) slicing for X-ray microspectroscopy

2019 ◽  
Vol 8 (1) ◽  
pp. 97-111
Author(s):  
Dorothea S. Macholdt ◽  
Jan-David Förster ◽  
Maren Müller ◽  
Bettina Weber ◽  
Michael Kappl ◽  
...  
Keyword(s):  
Spatial Distribution ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Oxidation States ◽  
X Ray ◽  
Scientific Debate ◽  
Rock Samples ◽  
Valence States ◽  
Scanning Transmission ◽  
Visualization Techniques

Abstract. The spatial distribution of transition metal valence states is of broad interest in the microanalysis of geological and environmental samples. An example is rock varnish, a natural manganese (Mn)-rich rock coating, whose genesis mechanism remains a subject of scientific debate. We conducted scanning transmission X-ray microscopy with near-edge X-ray absorption fine-structure spectroscopy (STXM-NEXAFS) measurements of the abundance and spatial distribution of different Mn oxidation states within the nano- to micrometer thick varnish crusts. Such microanalytical measurements of thin and hard rock crusts require sample preparation with minimal contamination risk. Focused ion beam (FIB) slicing was used to obtain ∼100–1000 nm thin wedge-shaped slices of the samples for STXM, using standard parameters. However, while this preparation is suitable for investigating element distributions and structures in rock samples, we observed artifactual modifications of the Mn oxidation states at the surfaces of the FIB slices. Our results suggest that the preparation causes a reduction of Mn4+ to Mn2+. We draw attention to this issue, since FIB slicing, scanning electron microscopy (SEM) imaging, and other preparation and visualization techniques operating in the kilo-electron-volt range are well-established in geosciences, but researchers are often unaware of the potential for the reduction of Mn and possibly other elements in the samples.

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