scholarly journals The Signatures of Acid Concentration on the Optical Band Gap and Associated Band Tails of Chitosan from Shrimp for Application in Optoelectronic Devices

2022 ◽  
Vol 12 (01) ◽  
pp. 1-12
Author(s):  
Edwin Atego ◽  
John O. Agumba ◽  
Godfrey O. Barasa
Keyword(s):  
Band Gap ◽  
Acid Concentration ◽  
Optical Band Gap ◽  
Optoelectronic Devices ◽  
Band Tails

The Role of Acid Concentration on Band Gap Shrinkage in Cellulose Nanocrystals Fabricated from Water Hyacinth

2022 ◽  
pp. 1-3
Author(s):  
Jack A Adem ◽  
◽  
John O Agumba ◽  
Godfrey O Barasa ◽  
Angeline A Ochung ◽  
...  
Keyword(s):  
Band Gap ◽  
Acid Concentration ◽  
Cellulose Nanocrystals ◽  
Optical Band Gap ◽  
Impurity Band ◽  
Band Gap Energy ◽  
Phase Identification ◽  
Hydrolysis Time ◽  
Gap Energy ◽  
Vis Spectroscopy

In this study, the fingerprint of the acid concentration during the hydrolysis process on the optical band gap of cellulose nanocrystals (CNCs) has been systematically studied. The CNCs have been prepared using hydrochloric acid at a hydrolysis temperature of 50°C and at a constant hydrolysis time of 4 hours but with varying hydrochloric cid concentrations of 5%, 10% and 15%. The crystalline structure and phase identification of the CNCs have been studied using XRD technique. UV-Vis Spectroscopy has been done and the optical band gap energy calculated by performing the Tauc’s plot. From the study, the grain size has been found to decrease with acid concentration while the band gap energy has been found to increase with increasing acid concentration. Further, the optical band gaps of the CNCs have been found to decrease with the increase in crystallite size. This shrinkage of the band gap has been attributed to the increased impurity concentration leading to the narrowing of the band gap due to the emerging of the impurity band formed by the overlapped impurity states

Stability Investigation in the Optical Properties of Thermally Evaporated Ge5Se95-x Znx Thin Films

2015 ◽  
Vol 7 (3) ◽  
pp. 1923-1930
Author(s):  
Austine Amukayia Mulama ◽  
Julius Mwakondo Mwabora ◽  
Andrew Odhiambo Oduor ◽  
Cosmas Mulwa Muiva ◽  
Boniface Muthoka ◽  
...  
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Optical Band Gap ◽  
Thermal Evaporation ◽  
Optical Transition ◽  
Bulk Material ◽  
Band Gap Energy ◽  
Optical Absorbance ◽  
Gap Energy ◽  
Constituent Elements

 Selenium-based chalcogenides are useful in telecommunication devices like infrared optics and threshold switching devices. The investigated system of Ge5Se95-xZnx (0.0 ≤ x ≤ 4 at.%) has been prepared from high purity constituent elements. Thin films from the bulk material were deposited by vacuum thermal evaporation. Optical absorbance measurements have been performed on the as-deposited thin films using transmission spectra. The allowed optical transition was found to be indirect and the corresponding band gap energy determined. The variation of optical band gap energy with the average coordination number has also been investigated based on the chemical bonding between the constituents and the rigidity behaviour of the system’s network.

scholarly journals Polymer Thermal Treatment Production of Cerium Doped Willemite Nanoparticles: An Analysis of Structure, Energy Band Gap and Luminescence Properties

Materials ◽  
2021 ◽  
Vol 14 (5) ◽  
pp. 1118
Author(s):  
Ibrahim Mustapha Alibe ◽  
Khamirul Amin Matori ◽  
Mohd Hafiz Mohd Zaid ◽  
Salisu Nasir ◽  
Ali Mustapha Alibe ◽  
...  
Keyword(s):  
Solid State ◽  
Thermal Treatment ◽  
Band Gap ◽  
Optical Band Gap ◽  
Dopant Concentration ◽  
Blue Emission ◽  
Green Emission ◽  
Band Gap Energy ◽  
Solid State Lighting ◽  
Gap Energy

The contemporary market needs for enhanced solid–state lighting devices has led to an increased demand for the production of willemite based phosphors using low-cost techniques. In this study, Ce3+ doped willemite nanoparticles were fabricated using polymer thermal treatment method. The special effects of the calcination temperatures and the dopant concentration on the structural and optical properties of the material were thoroughly studied. The XRD analysis of the samples treated at 900 °C revealed the development and or materialization of the willemite phase. The increase in the dopant concentration causes an expansion of the lattice owing to the replacement of larger Ce3+ ions for smaller Zn2+ ions. Based on the FESEM and TEM micrographs, the nanoparticles size increases with the increase in the cerium ions. The mean particles sizes were estimated to be 23.61 nm at 1 mol% to 34.02 nm at 5 mol% of the cerium dopant. The optical band gap energy of the doped samples formed at 900 °C decreased precisely by 0.21 eV (i.e., 5.21 to 5.00 eV). The PL analysis of the doped samples exhibits a strong emission at 400 nm which is ascribed to the transition of an electron from localized Ce2f state to the valence band of O2p. The energy level of the Ce3+ ions affects the willemite crystal lattice, thus causing a decrease in the intensity of the green emission at 530 nm and the blue emission at 485 nm. The wide optical band gap energy of the willemite produced is expected to pave the way for exciting innovations in solid–state lighting applications.

scholarly journals Resonance and antiresonance in Raman scattering in GaSe and InSe crystals

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
M. Osiekowicz ◽  
D. Staszczuk ◽  
K. Olkowska-Pucko ◽  
Ł. Kipczak ◽  
M. Grzeszczyk ◽  
...  
Keyword(s):  
Raman Scattering ◽  
Temperature Effect ◽  
Band Gap ◽  
Raman Spectra ◽  
Quantum Interference ◽  
Optical Band Gap ◽  
Phonon Coupling ◽  
Phonon Modes ◽  
Electron Phonon Coupling ◽  
Resonant Raman

AbstractThe temperature effect on the Raman scattering efficiency is investigated in $$\varepsilon$$ ε -GaSe and $$\gamma$$ γ -InSe crystals. We found that varying the temperature over a broad range from 5 to 350 K permits to achieve both the resonant conditions and the antiresonance behaviour in Raman scattering of the studied materials. The resonant conditions of Raman scattering are observed at about 270 K under the 1.96 eV excitation for GaSe due to the energy proximity of the optical band gap. In the case of InSe, the resonant Raman spectra are apparent at about 50 and 270 K under correspondingly the 2.41 eV and 2.54 eV excitations as a result of the energy proximity of the so-called B transition. Interestingly, the observed resonances for both materials are followed by an antiresonance behaviour noticeable at higher temperatures than the detected resonances. The significant variations of phonon-modes intensities can be explained in terms of electron-phonon coupling and quantum interference of contributions from different points of the Brillouin zone.

scholarly journals Encapsulated Passivation of Perovskite Quantum Dot (CsPbBr3) Using a Hot-Melt Adhesive (EVA-TPR) for Enhanced Optical Stability and Efficiency

Crystals ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 419
Author(s):  
Saradh Prasad ◽  
Mamduh J. Aljaafreh ◽  
Mohamad S. AlSalhi ◽  
Abeer Alshammari
Keyword(s):  
Quantum Dots ◽  
Band Gap ◽  
Surface Defects ◽  
Optoelectronic Devices ◽  
Ethylene Vinyl Acetate ◽  
Light Emitting ◽  
Optical Stability ◽  
Perovskite Quantum Dots ◽  
Polymer Light Emitting Diodes ◽  
Hot Melt

The notable photophysical characteristics of perovskite quantum dots (PQDs) (CsPbBr3) are suitable for optoelectronic devices. However, the performance of PQDs is unstable because of their surface defects. One way to address the instability is to passivate PQDs using different organic (polymers, oligomers, and dendrimers) or inorganic (ZnS, PbS) materials. In this study, we performed steady-state spectroscopic investigations to measure the photoluminescence (PL), absorption (A), transmission (T), and reflectance (R) of perovskite quantum dots (CsPbBr3) and ethylene vinyl acetate/terpene phenol (1%) (EVA-TPR (1%), or EVA) copolymer/perovskite composites in thin films with a thickness of 352 ± 5 nm. EVA is highly transparent because of its large band gap; furthermore, it is inexpensive and easy to process. However, the compatibility between PQDs and EVA should be established; therefore, a series of analyses was performed to compute parameters, such as the band gap, the coefficients of absorbance and extinction, the index of refractivity, and the dielectric constant (real and imaginary parts), from the data obtained from the above investigation. Finally, the optical conductivities of the films were studied. All these analyses showed that the EVA/PQDs were more efficient and stable both physically and optically. Hence, EVA/PQDs could become copolymer/perovskite active materials suitable for optoelectronic devices, such as solar cells and perovskite/polymer light-emitting diodes (PPLEDs).

scholarly journals ZnSnN 2 in Real Space and k‐Space: Lattice Constants, Dislocation Density, and Optical Band Gap

2021 ◽  
pp. 2100015
Author(s):  
Vegard Skiftestad Olsen ◽  
Vetle Øversjøen ◽  
Daniela Gogova ◽  
Béla Pécz ◽  
Augustinas Galeckas ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Band Gap ◽  
Optical Band Gap ◽  
Real Space ◽  
Lattice Constants ◽  
Space Lattice

scholarly journals Role of Bi3+ ions on structural, optical, photoluminescence and electrical performance of Cd0.9-xZn0.1BixS QDs

2021 ◽  
Vol 3 (7) ◽  
Author(s):  
A. Krishnamoorthy ◽  
P. Sakthivel ◽  
I. Devadoss ◽  
V. M. Anitha Rajathi
Keyword(s):  
Band Gap ◽  
Optical Band Gap ◽  
Optical Transmittance ◽  
Electrical Performance ◽  
Chemical Route ◽  
Red Emission ◽  
The Mean ◽  
Cubic Structure ◽  
Cyclic Voltammetry Analysis

AbstractIn this work, the Cd0.9-xZn0.1BixS QDs with different compositions of Bi3+ ions (0 ≤ x ≤ 0.05) were synthesized using a facile chemical route. The prepared QDs were characterized for analyzing the structural, morphological, elemental, optical, band gap, photoluminescence and electrochemical properties. XRD results confirmed that the Cd0.9-xZn0.1BixS QDs have a cubic structure. The mean crystallite size was increased from ~ 2 to ~ 5 nm for the increase of Bi3+ ions concentration. The optical transmittance behavior was decreased with increasing Bi3+ ions. The scanning electron microscope images showed that the prepared QDs possessed agglomerated morphology and the EDAX confirmed the presence of doped elements as per stoichiometry ratio. The optical band gap was slightly blue-shifted for initial substitution (Bi3+  = 1%) of Bi3+ ions and red-shifted for further increase of Bi3+ compositions. The optical band gap was ranged between 3.76 and 4.0 eV. High intense red emission was received for Bi3+ (1%) doped Zn:CdS QDs. The red emission peaks were shifted to a higher wavelength side due to the addition of Bi3+ ions. The PL emission on UV-region was raised for Bi3+ (1%) and it was diminished. Further, a violet (422 nm) and blue (460 nm) emission were received for Bi3+ ions doping. The cyclic voltammetry analysis showed that Bi3+ (0%) possessed better electrical properties than other compositions of Bi3+ ions.

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