scholarly journals Electrical Properties with Varying CuPc Thickness and Channel Length of the Field-effect Transistor

2007 ◽  
Vol 20 (1) ◽  
pp. 47-52
Keyword(s):  
Electrical Properties ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Channel Length ◽  
Effect Transistor

Patterning rubrene crystalline thin films for sub-micrometer channel length field-effect transistor arrays

2014 ◽  
Vol 2 (44) ◽  
pp. 9359-9363 ◽  
Author(s):  
Juan Zhu ◽  
Wenchong Wang ◽  
Qigang Zhong ◽  
Liqiang Li ◽  
Chuan Du ◽  
...  
Keyword(s):  
Thin Films ◽  
Field Effect ◽  
Carrier Mobility ◽  
Field Effect Transistor ◽  
Channel Length ◽  
Organic Films ◽  
Porous Structures ◽  
Patterned Growth ◽  
Effect Transistor ◽  
Magnitude Difference

The patterned growth of crystalline rubrene films directly on electrodes is demonstrated. In addition, organic films with close packed and porous structures are locally achieved by controlling the electrode spaces, resulting in a two orders of magnitude difference in carrier mobility.

scholarly journals Numerical Evaluation of the Effect of Geometric Tolerances on the High-Frequency Performance of Graphene Field-Effect Transistors

Nanomaterials ◽  
2021 ◽  
Vol 11 (11) ◽  
pp. 3121
Author(s):  
Monica La Mura ◽  
Patrizia Lamberti ◽  
Vincenzo Tucci
Keyword(s):  
High Frequency ◽  
Communication Systems ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Channel Length ◽  
Geometrical Parameters ◽  
Effect Transistor ◽  
Rf Performance ◽  
The Impact

The interest in graphene-based electronics is due to graphene’s great carrier mobility, atomic thickness, resistance to radiation, and tolerance to extreme temperatures. These characteristics enable the development of extremely miniaturized high-performing electronic devices for next-generation radiofrequency (RF) communication systems. The main building block of graphene-based electronics is the graphene-field effect transistor (GFET). An important issue hindering the diffusion of GFET-based circuits on a commercial level is the repeatability of the fabrication process, which affects the uncertainty of both the device geometry and the graphene quality. Concerning the GFET geometrical parameters, it is well known that the channel length is the main factor that determines the high-frequency limitations of a field-effect transistor, and is therefore the parameter that should be better controlled during the fabrication. Nevertheless, other parameters are affected by a fabrication-related tolerance; to understand to which extent an increase of the accuracy of the GFET layout patterning process steps can improve the performance uniformity, their impact on the GFET performance variability should be considered and compared to that of the channel length. In this work, we assess the impact of the fabrication-related tolerances of GFET-base amplifier geometrical parameters on the RF performance, in terms of the amplifier transit frequency and maximum oscillation frequency, by using a design-of-experiments approach.

A metal‐oxide‐semiconductor field‐effect transistor with a 20‐nm channel length

1990 ◽  
Vol 68 (5) ◽  
pp. 2493-2495 ◽  
Author(s):  
A. Hartstein ◽  
N. F. Albert ◽  
A. A. Bright ◽  
S. B. Kaplan ◽  
B. Robinson ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Channel Length ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Effect Transistor ◽  
20 Nm

Tailoring the electrical properties of MoTe2 field effect transistor via chemical doping

2019 ◽  
Vol 135 ◽  
pp. 106247 ◽  
Author(s):  
M.W. Iqbal ◽  
Aliya Amin ◽  
M.A. Kamran ◽  
Hira Ateeq ◽  
Ehsan Elahi ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Chemical Doping ◽  
Effect Transistor

The Effect of Effective Channel Length on a Silicon Nanowire Fin Field Effect Transistor

2013 ◽  
Vol 10 (4) ◽  
pp. 964-967
Author(s):  
Fatimah K. A. Hamid ◽  
Sohail Anwar ◽  
N. Aziziah Amin ◽  
Zaharah Johari ◽  
Hatef Sadeghi ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Silicon Nanowire ◽  
Channel Length ◽  
Effect Transistor ◽  
Effective Channel

Electrical properties of Bi3.25La0.75Ti3O12/LaAlO3/Si structures for ferroelectric field effect transistor applications

2004 ◽  
Vol 37 (6) ◽  
pp. 832-835 ◽  
Author(s):  
Yi-Jun Wang ◽  
Ai-Dong Li ◽  
Di Wu ◽  
Qi-Yue Shao ◽  
Hui-Qin Ling ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor
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