Electrical Parameters of Si n-Mosfet THz-Detector: Matching with External Amplifier
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The influence of the external load resistance on voltage and current sensitivities of Si n-MOSFET THz detectors at radiation frequency ν=142 GHz is investigated. The noise level in the frequency band, which is needed for real-time imaging is specified. Investigated were transistors with the gate widths and lengths within 1×1 µm 2 and 20×20 µm 2 . It is shown that internal resistance and external load resistance form the divider, the parameters of which are important for matching with read-out devices.
2015 ◽
Vol 137
(4)
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pp. 1732-1743
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2018 ◽
Vol 17
(1/2)
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pp. 136
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2020 ◽
Vol 2020
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pp. 1-11
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