Simulation Analysis of the Variability of MOSFET Threshold Voltage and Current on Channel Width

2018 ◽  
Vol 55 (6) ◽  
pp. 13-19
Author(s):  
In-Young Chung ◽  
Chan Hyeong Park
Keyword(s):  
Threshold Voltage ◽  
Simulation Analysis ◽  
Channel Width

The impact of channel-width on threshold voltage for short channel devices

2011 ◽  
Author(s):  
Kiran Agarwal Gupta ◽  
V Venkateswarlu ◽  
Dinesh Anvekar ◽  
Sumit Basu
Keyword(s):  
Threshold Voltage ◽  
Channel Width ◽  
Short Channel ◽  
The Impact

Design and Gate Drive Considerations for Epitaxial 1.2 kV Buried Grid N-on and N-off JFETs for Operation at 250°C

2010 ◽  
Vol 645-648 ◽  
pp. 961-964 ◽  
Author(s):  
Jang Kwon Lim ◽  
Mietek Bakowski ◽  
Hans Peter Nee
Keyword(s):  
Threshold Voltage ◽  
Doping Concentration ◽  
Channel Length ◽  
Channel Width ◽  
Temperature Range ◽  
Turn On ◽  
Switching Losses ◽  
Order Of Magnitude ◽  
Gate Resistance

The 1.2 kV 4H-SiC buried-grid vertical JFET structures with Normally-on (N-on) and Normally-off (N-off) design were investigated by simulations. The conduction and switching properties were determined in the temperature range from -50°C to 250°C. In this paper, the characteristics of the N-on designs with threshold voltage (Vth) of -50 V and -10 V are compared with the N-off design (Vth=0). The presented data are for devices with the same channel length at 250°C. The results show that the on-resistance (Ron) decreases with increasing channel doping concentration and decreasing channel width. The presented turn-on, Eon, and turn-off, Eoff, energies per pulse are calculated under the switching conditions 100 A/cm2 and 600 V with a gate resistance of Rg=1 . For the two N-on designs the total switching losses, Esw=Eon+Eoff, differ less than 30% with Wch 0.7 m. With Wch=0.5 m the switching losses of N-off design are almost one order of magnitude higher than those of the N-on design with Vth = -50 V.

A New Mismatch Model of Temperature and Narrow Channel Width Dependence on Threshold Voltage of MOSFETs

2014 ◽  
Vol 931-932 ◽  
pp. 984-988
Author(s):  
Anucha Ruangphanit ◽  
Natthaphon Sakuna ◽  
Surasak Niemcharoen ◽  
Rangson Muanghlua
Keyword(s):  
Threshold Voltage ◽  
Narrow Channel ◽  
Channel Width

scholarly journals Influence of Oxygen Flow Rate on Channel Width Dependent Electrical Properties of Indium Gallium Zinc Oxide Thin-Film Transistors

Nanomaterials ◽  
2020 ◽  
Vol 10 (12) ◽  
pp. 2357
Author(s):  
Gwomei Wu ◽  
Anup K. Sahoo
Keyword(s):  
Thin Film ◽  
Flow Rate ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Oxygen Flow Rate ◽  
Channel Width ◽  
Oxygen Flow ◽  
Indium Gallium Zinc Oxide ◽  
Electrical Characteristics ◽  
Indium Gallium

The effects of various oxygen flows on indium gallium zinc oxide (IGZO) based thin-film transistors (TFTs) with different channel width sizes have been investigated. The IGZO nano-films exhibited amorphous phase while the bandgap energy and sheet resistance increased with increasing oxygen flow rate. The electrical characteristics were evaluated with different sizes in channel width using fixed channel length. The distributions in terms of threshold voltage and current on–off level along the different channel width sizes have been discussed thoroughly. The minimum distribution of threshold voltage was observed at an oxygen flow rate of 1 sccm. The TFT electrical properties have been achieved, using an oxygen flow rate of 1 sccm with 500 µm channel width, the threshold voltage, ratio of on-current to off-current, sub-threshold swing voltage and field effect mobility to be 0.54 V, 106, 0.15 V/decade and 12.3 cm2/V·s, respectively. On the other hand, a larger channel width of 2000 µm could further improve the ratio of on-current to off-current and sub-threshold swing voltage to 107 and 0.11 V/decade. The optimized combination of oxygen flow and channel width showed improved electrical characteristics for TFT applications.

Threshold voltage dependence on channel width in nano-channel array AlGaN/GaN HEMTs

2011 ◽  
Vol 9 (3-4) ◽  
pp. 879-882 ◽  
Author(s):  
Shenghou Liu ◽  
Yong Cai ◽  
Rumin Gong ◽  
Jinyan Wang ◽  
Chunhong Zeng ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Voltage Dependence ◽  
Channel Width ◽  
Nano Channel ◽  
Gan Hemts

Investigation of channel width-dependent threshold voltage variation in a-InGaZnO thin-film transistors

2014 ◽  
Vol 104 (13) ◽  
pp. 133503 ◽  
Author(s):  
Kuan-Hsien Liu ◽  
Ting-Chang Chang ◽  
Ming-Siou Wu ◽  
Yi-Syuan Hung ◽  
Pei-Hua Hung ◽  
...  
Keyword(s):  
Thin Film ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Channel Width ◽  
Voltage Variation

Structural Dependences of Gunn Oscillations in a Planar Nano-Device

2014 ◽  
Vol 618 ◽  
pp. 39-42
Author(s):  
Kun Yuan Xu ◽  
Ya Nan Wang ◽  
Zuo Nian Wang
Keyword(s):  
Monte Carlo ◽  
Threshold Voltage ◽  
Channel Width ◽  
Two Dimensional ◽  
Device Structure ◽  
Ensemble Monte Carlo ◽  
Domain Evolution ◽  
Current Oscillations ◽  
Gunn Effect ◽  
The Asymmetry

Gunn oscillations in a GaAs-based planar nanodevice are studied using a two-dimensional ensemble Monte Carlo (EMC) method. Current oscillations with a frequency of about 0.1 THz have been observed. The current oscillations are accompanied by electron domain evolution along the nanochannel. As such, they can be attributed to Gunn Effect. Further study shows that the Gunn oscillations are not only bias-dependent, but also structural-dependent. The threshold voltage and the amplitude of the oscillations are both related to the channel width and the asymmetry of the device structure.

scholarly journals A Comparative Study of E-Beam Deposited Gate Dielectrics on Channel Width-Dependent Performance and Reliability of a-IGZO Thin-Film Transistors

Materials ◽  
2018 ◽  
Vol 11 (12) ◽  
pp. 2502 ◽  
Author(s):  
Gwomei Wu ◽  
Anup Sahoo ◽  
Dave Chen ◽  
J. Chang
Keyword(s):  
Thin Film ◽  
Comparative Study ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Gate Dielectrics ◽  
Channel Width ◽  
Capacitance Density ◽  
Voltage Variation ◽  
Igzo Tft

A comparative study on the effects of e-beam deposited gate dielectrics for amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) has been carried out using SiO2, Si3N4, and Ta2O5 dielectric materials. The channel width dependent device electrical performances were investigated using three different sizes of 500 μm, 1000 μm, and 1500 μm. The reliability characteristics were revealed by the threshold voltage variation and drain current variation under positive bias stress. The e-beam deposited high-k dielectric Ta2O5 exhibited the highest stability at the stress voltage of 3 V for 1000 s due to its high capacitance density at 34.1 nF/cm2. The threshold voltage variation along the channel width decreased from SiO2, then Si3N4, to Ta2O5, because of the increased insulating property and density of capacitance. The SiO2-based a-IGZO TFT achieved a high field effect mobility of 27.9 cm2/V·s and on–off current ratio > 107 at the lower channel width of 500 μm. The gate leakage current also decreased with increasing the channel width/length ratio. In addition, the SiO2 gate dielectric-based a-IGZO TFT could be a faster device, whereas the Ta2O5 gate dielectric would be a good candidate for a higher reliability component with adequate surface treatment.

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