Deep-Level Dominated Current-Voltage Characteristics of Novel Semiconductor Heterostructures

AbstractCurrent-voltage characteristics of Au contacts formed on buried implanted oxide silicon-on-insulator structures and molecular beam epitaxially grown GaAs on (1012) sapphire and silicon-on-sapphire substrates indicate that the dominant transport mechanism in these films is space-charge-limited current conduction in the presence of deep-level states. The deep-level parameters, determined using an analysis of the current-voltage characteristics, appear to be sensitive to the nature of crystallographic defects present in the grown layers. Conduction in the GaAs film on SOS was dominated by one discrete state located ~ 0.28eV below the conduction band-edge, which is close to the El center uniquely observed in the molecular beam epitaxially grown GaAs-on-Si. Discrete levels are also observed in annealed buried implanted oxide silicon-on-insulator films. In contrast, the GaAs films deposited directly on (1012) sapphire substrates and rapid-thermally annealed high-dose As implanted buried oxide SOI films appear to have a continuous distribution of states. The distributed states in GaAs films deposited directly on sapphire probably arise from the electrical activity of the double-position boundaries present in this material system.

Deep-level dominated current-voltage characteristics of buried implanted oxide silicon-on-insulator

IEEE Electron Device Letters ◽

10.1109/55.31693 ◽

1989 ◽

Vol 10 (3) ◽

pp. 135-137 ◽

Cited By ~ 4

Author(s):

K. Das ◽

J.W. Palmour ◽

J.B. Posthill ◽

T.P. Humphreys ◽

J. O'Sullivan-French ◽

...

Keyword(s):

Deep Level ◽

Silicon On Insulator ◽

Current Voltage ◽

A new two-dimensional short channel model for the drain current-voltage characteristics of a fully depleted SOI (silicon-on-insulator) MOSFET

International Journal of Electronics ◽

10.1080/00207219508926271 ◽

1995 ◽

Vol 79 (3) ◽

pp. 293-301 ◽

Cited By ~ 3

Author(s):

VANEETA AGGARWAL ◽

R. S. GUPTA

Keyword(s):

Channel Model ◽

Drain Current ◽

Silicon On Insulator ◽

Two Dimensional ◽

Short Channel ◽

Fully Depleted ◽

Current Voltage ◽

Effect of deep-level states on current-voltage characteristics and electroluminescence of blue and UV light-emitting diodes

physica status solidi (a) ◽

10.1002/pssa.200925596 ◽

2010 ◽

Vol 207 (6) ◽

pp. 1489-1496 ◽

Cited By ~ 12

Author(s):

R. Nana ◽

P. Gnanachchelvi ◽

M. A. Awaah ◽

M. H. Gowda ◽

A. M. Kamto ◽

...

Keyword(s):

Light Emitting Diodes ◽

Deep Level ◽

Uv Light ◽

Light Emitting ◽

Current Voltage ◽

Study of the current-voltage characteristics of n-on-p junction fabricated by pr oton-implanted molecular beam epitaxial Hg1-xCdxTe

Acta Physica Sinica ◽

10.7498/aps.52.1496 ◽

2003 ◽

Vol 52 (6) ◽

pp. 1496

Author(s):

Chen Gui-Bin ◽

Li Zhi-Feng ◽

Cai Wei-Ying ◽

He Li ◽

Hu Xiao-Ning ◽

...

Keyword(s):

Molecular Beam ◽

Molecular Beam Epitaxial ◽

Current Voltage ◽

Transport Properties and Conduction Band Offset of n-ZnO/n-6H-SiC Heterostructures

MRS Proceedings ◽

10.1557/proc-0957-k10-21 ◽

2006 ◽

Vol 957 ◽

Author(s):

Yahya Alivov ◽

Xiao Bo ◽

Fan Qian ◽

Daniel Johnstone ◽

Cole Litton ◽

...

Keyword(s):

Conduction Band ◽

Deep Level Transient Spectroscopy ◽

Deep Level ◽

Band Offset ◽

Measured Temperature ◽

Temperature Dependent ◽

Conduction Band Offset ◽

Current Voltage ◽

Current Voltage Characteristics ◽

ABSTRACTThe conduction band offset of n-ZnO/n-6H-SiC heterostructures fabricated by rf-sputtered ZnO on commercial n-type 6H-SiC substrates has been measured. Temperature dependent current-voltage characteristics, photocapacitance, and deep level transient spectroscopy measurements showed the conduction band offsets to be 1.25 eV, 1.1 eV, and 1.22 eV, respectively.

High-Temperature (up to 800 K) Operation of 6-kV 4H-SiC Junction Diodes

Materials Science Forum ◽

10.4028/www.scientific.net/msf.527-529.1339 ◽

2006 ◽

Vol 527-529 ◽

pp. 1339-1342 ◽

Cited By ~ 5

Author(s):

Michael E. Levinshtein ◽

Pavel A. Ivanov ◽

Mykola S. Boltovets ◽

Valentyn A. Krivutsa ◽

John W. Palmour ◽

...

Keyword(s):

Deep Level ◽

Reverse Current ◽

Differential Resistance ◽

Base Resistance ◽

Small Current ◽

Current Voltage ◽

Current Voltage Characteristics ◽

Increasing Temperature ◽

Surface Leakage ◽

And Diffusion

Steady-state and transient characteristics of packaged 6-kV 4H-SiC junction diodes have been investigated in the temperature range Т = 300 – 773 К. Analysis of the forward current-voltage characteristics and reverse current recovery waveforms shows that the lifetimeτ of non-equilibrium carriers in the base of the diodes steadily increases with temperature across the entire temperature interval. The rise in τ and decrease in carrier mobilities and diffusion coefficients with increasing temperature nearly compensate each other as regards their effect on the differential resistance of the diode, Rd. As a result, Rd is virtually temperature independent. An appreciable modulation of the base resistance takes place at room temperature even at a relatively small current density j of 20 A/cm2. At T = 800 K and j = 20 A/cm2, a very deep level of the base modulation has been observed. The bulk reverse current is governed by carrier generation in the space-charge region via a trap with activation energy of 1.62 eV. The surface leakage current of packaged structures does not exceed 2×10-6 А at T = 773 K and a reverse bias of 300 V.

Electrical and Optical Characterisation of Homojjunction Gallium Nitride Light Emitting Diodes

MRS Proceedings ◽

10.1557/proc-482-1113 ◽

1997 ◽

Vol 482 ◽

Author(s):

G M Laws ◽

J Morgan ◽

G B Ren ◽

I Harrison ◽

E C Larkins ◽

...

Keyword(s):

Gallium Nitride ◽

Full Width Half Maximum ◽

Light Emitting Diodes ◽

Deep Level ◽

Deep Level Emission ◽

Near Band Edge ◽

Band Edge Emission ◽

Light Emitting ◽

Current Voltage ◽

AbstractWe report on the fabrication and characterisation gallium nitride light emitting diodes (LEDs) grown by molecular beam epitaxy on (0001) oriented sapphire and (111)B GaAs substrates. The current voltage characteristics of the devices grown on sapphire show turn on voltages of between 4 and 5V with large on-series resistance of 600Ω; for corresponding devices grown on GaAs these parameters are between 6 and 7V and 150 Ω, respectively.Room temperature electroluminescence (EL) spectra from the GaN LEDs ,grown on sapphire substrates, show a dominant emission at 3.2 eV (397nm) with a full width half maximum (FWHM) of 335 meV which is attributed to free electron to acceptor transitions (e, A−Mg). A broad low intensity deep level emission is also observed centred at 2.4 eV (506nm). The peak of the EL from the devices grown on GaAs is at 3.1eV rather than 3.2eV. The differences between the two sets of devices are probably caused by the different device geometry.Preliminary results show that an “annealing” effect caused by electrical stressing resulted in an improvement of the EL spectra. The stressed samples show an increase in the near band edge emission intensity, a 20meV reduction in the FWHM and a significant reduction in the intensity of the deep level emission. The devices have a large 1/f noise contribution which does not appear to change after electrical stressing.

Rapid-Thermal-Processing Induced Deep Level Traps and their Spatial Distribution in MBE GaAs

MRS Proceedings ◽

10.1557/proc-92-361 ◽

1987 ◽

Vol 92 ◽

Author(s):

Akio Kitagawa ◽

Yutaka Tokuda ◽

Akira Usami ◽

Takao Wada ◽

Hiroyuki kano

Keyword(s):

Thermal Processing ◽

Deep Level Transient Spectroscopy ◽

Molecular Beam ◽

Deep Level ◽

Rapid Thermal Processing ◽

Spatial Variations ◽

Molecular Beam Epitaxial ◽

Gaas Films ◽

Si Doped ◽

ABSTRACTRapid thermal processing (RTP) using halogen lamps for a Si-doped molecular beam epitaxial (MBE) n-GaAs layers was investigated by deep level transient spectroscopy. RTP was performed at 700°C, 800°C and 900°C for 6 s. Two electron traps NI ( Ec-0.5-0.7eV) and EL2 (Ec - 0.82 eV) are produced by RTP at 800 and 900°C.The peculiar spatial variations of the Nl and EL2 concentration across the MBE GaAs films are observed. The larger concentrations of the trap N1 and EL2 are observed near the edge of the samples, and the minima of N1 and EL2 concentration lie between the center and the edge of the sample. It seems that these spatial variations of N1 and EL2 concentration are consistent with that of the thermal stress induced by RTP. Furthermore, the EL2 concentration near the edge of the sample is suppressed by the contact with the GaAs pieces on the edge around the sample during RTP.

Electronic Properties of ZnO/Si Heterojunction Prepared by ALD.

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.178-179.130 ◽

2011 ◽

Vol 178-179 ◽

pp. 130-135 ◽

Cited By ~ 4

Author(s):

Vincent Quemener ◽

Mari Alnes ◽

Lasse Vines ◽

Ola Nilsen ◽

Helmer Fjellvåg ◽

...

Keyword(s):

Electronic Properties ◽

Deep Level ◽

Atomic Layer ◽

Substantial Improvement ◽

Conduction Band Edge ◽

Energy Position ◽

Layer Deposition ◽

Current Voltage ◽

Capacitance Voltage ◽

ZnO/n-Si and ZnO/p-Si heterostructures were prepared by Atomic layer deposition (ALD) and the electronic properties have been investigated by Current-Voltage (I-V), Capacitance-Voltage (C-V) and Deep level transient spectroscopy (DLTS) measurements. DLTS measurements show two dominants electron traps at the interface of the ZnO/n-Si junction with energy position at 0.07 eV and 0.15 eV below the conduction band edge, labelled E(0.07) and E(0.15), respectively, and no electrically active defects at the interface of the ZnO/p-Si junction. E(0.07) is reduced by annealing up to 400°C while E(0.15) is created at 500°C. The best heterostructure is found after heat treatment at 400°C with a substantial improvement of the current rectification for ZnO/n-Si and the formation of Ohmic contact on ZnO/p-Si. A reduction of the interface defects correlates with an improvement of the crystal structure of the ZnO film with a preferred orientation along the c-axis.

Maskless Formation of Tungsten Films by Ion Beam Assisted Deposition Technique

MRS Proceedings ◽

10.1557/proc-158-223 ◽

1989 ◽

Vol 158 ◽

Author(s):

Zheng Xu ◽

Toshihiko Kosugi ◽

Kenji Gamo ◽

Susumu Namba

Keyword(s):

Deep Level ◽

Ion Beam ◽

Low Energy ◽

Deposition Technique ◽

Film Properties ◽

Ion Beam Assisted Deposition ◽

Current Voltage ◽

Residual Damage ◽

Current Voltage Characteristics ◽

ABSTRACTW films were deposited on n-GaAs by ion beam assisted deposition technique using low energy H2+ and Ar+, and film properties and residual damage in the substrate were investigated by measuring X-ray photoemission, current-voltage characteristics and deep level transient spectroscopy. Films with a resistivity of 1O−5 ohm·cm were formed. It was observed that damage can be reduced using the low energy beams and that Schottky contacts with n-factor of almost 1 and barrier height of 0.88 eV were formed.