scholarly journals Influence of high dose As ion implantation on electrical properties of high resistivity silicon

2014 ◽  
Vol 63 (13) ◽  
pp. 136803
Author(s):  
Zhu He ◽  
Zhang Bing-Po ◽  
Wang Miao ◽  
Hu Gu-Jin ◽  
Dai Ning ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Ion Implantation ◽  
High Resistivity ◽  
High Dose ◽  
High Resistivity Silicon

Electrical properties of deuteron irradiated high resistivity silicon

2014 ◽  
Vol 325 ◽  
pp. 107-114 ◽  
Author(s):  
Jerzy Krupka ◽  
Waldemar Karcz ◽  
Sergej P. Avdeyev ◽  
Paweł Kamiński ◽  
Roman Kozłowski
Keyword(s):  
Electrical Properties ◽  
High Resistivity ◽  
High Resistivity Silicon

scholarly journals Влияние условий формирования геттера в высокоомном кремнии на характеристики PIN-фотодиодов

2020 ◽  
Vol 46 (21) ◽  
pp. 11
Author(s):  
И.Б. Чистохин ◽  
К.Б. Фрицлер
Keyword(s):  
Ion Implantation ◽  
Dark Current ◽  
Carrier Lifetime ◽  
High Resistivity ◽  
Phosphorus Doping ◽  
Polysilicon Film ◽  
Pin Photodiode ◽  
Current Value ◽  
Dark Currents ◽  
High Resistivity Silicon

The influence of gettering conditions in high resistivity silicon during the PIN photodiode fabrication process on the reverse dark currents has been studied. It was demonstrated that the getter formation of backside substrate by a combination of phosphorus ion implantation and deposition of polysilicon film followed by phosphorus doping at the temperatures below 900 0C results in reduction of reverse dark current value and increasing of nonequilibrium carrier lifetime.

Si Implantation and Annealing OF GaN FOR n-Type Layer Formation

1996 ◽  
Vol 423 ◽  
Author(s):  
B. Molnar ◽  
A. E. Wickenden ◽  
M. V. Rao
Keyword(s):  
Electrical Properties ◽  
Liquid Droplet ◽  
Maximum Temperature ◽  
High Resistivity ◽  
High Dose ◽  
Layer Formation ◽  
Annealing Temperatures ◽  
Type Layer ◽  
Measurable Change

AbstractHigh dose Si has been implanted into MOCVD grown high resistivity and n-type GaN in the 26–500°C temperature range. The implant activation varies widely (30 −>100%) depending on, what energy level is assigned to the Si, the implantation and annealing temperatures, and the quality of the substrate. The usable maximum temperature for activation is limited by the severe decomposition of the GaN. After 1050°C 15s RTA Ga liquid droplet formation has been observed by SEM. This decomposition changes the surface morphology but did not introduce measurable change in the electrical properties up to 1150°C /120s RTA.

High energy As ion implantation to GaAs

1995 ◽  
Vol 53 ◽  
pp. 458-459
Author(s):  
J. Jasinski ◽  
Z. Liliental-Weber ◽  
M. Kaminska ◽  
J. Washburn ◽  
C. Jagadish
Keyword(s):  
Ion Implantation ◽  
Structural Characteristics ◽  
High Energy ◽  
High Resistivity ◽  
High Dose ◽  
Mbe Growth ◽  
Potential Applications ◽  
Insulating Properties ◽  
Post Implantation ◽  
Lt Gaas

Over the last few years there have been many studies of GaAs layers grown in the temperature range from 180°C to 300°C called LT-GaAs. These studies were motivated by the potential applications of that material in microwave and fast optoelectronic devices. Annealed LT-GaAs layers have interesting electrical properties including high resistivity and short photocarrier lifetime connected with the nonstoichiometry of that material. However, it is still not clear whether arsenic antisite point defects or arsenic precipitates formed during annealing cause these interesting properties of LT GaAs.A second method of creating highly nonstoichiometric GaAs beside low temperature MBE growth is implantation with a high dose of arsenic. This method first applied two years ago showed that 200 keV arsenic ion implantation also leads to semi-insulating properties and that successive post-implantation annealing results in arsenic precipitate formation, similar to that observed in LT GaAs. Recently, more elaborate studies concerning photocarrier lifetime, resistivity, mobility and some structural characteristics were performed on GaAs implanted with high energy arsenic ions.

Analysis of Silicon-On-Insulator Structures Formed By Oxygen Ion Implantation

1985 ◽  
Vol 43 ◽  
pp. 300-301
Author(s):  
N. Lewis ◽  
E. L. Hall ◽  
A. Mogro-Campero ◽  
R. P. Love
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Dose ◽  
Crystal Silicon ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

TEM study of buried cobalt disilicide layers formed by ion implantation: Identification of cobalt monosilicide inclusions

1990 ◽  
Vol 48 (4) ◽  
pp. 576-577
Author(s):  
A. De Veirman ◽  
J. Van Landuyt ◽  
K.J. Reeson ◽  
R. Gwilliam ◽  
C. Jeynes ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Annealing Treatment ◽  
Silicon On Insulator ◽  
High Dose ◽  
Nitrogen Flow ◽  
Cobalt Disilicide ◽  
Transmission Electron ◽  
Beam Heating ◽  
Co Concentration ◽  
Silicon On Insulator Technology

In analogy to the formation of SIMOX (Separation by IMplanted OXygen) material which is presently the most promising silicon-on-insulator technology, high-dose ion implantation of cobalt in silicon is used to synthesise buried CoSi2 layers. So far, for high-dose ion implantation of Co in Si, only formation of CoSi2 is reported. In this paper it will be shown that CoSi inclusions occur when the stoichiometric Co concentration is exceeded at the peak of the Co distribution. 350 keV Co+ ions are implanted into (001) Si wafers to doses of 2, 4 and 7×l017 per cm2. During the implantation the wafer is kept at ≈ 550°C, using beam heating. The subsequent annealing treatment was performed in a conventional nitrogen flow furnace at 1000°C for 5 to 30 minutes (FA) or in a dual graphite strip annealer where isochronal 5s anneals at temperatures between 800°C and 1200°C (RTA) were performed. The implanted samples have been studied by means of Rutherford Backscattering Spectroscopy (RBS) and cross-section Transmission Electron Microscopy (XTEM).

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