Growth and characterization of indium doped silicon single crystals at industrial scale

2016 ◽  
Vol 55 (3) ◽  
pp. 031305 ◽  
Author(s):  
Stephan Haringer ◽  
Armando Giannattasio ◽  
Hans Christian Alt ◽  
Roberto Scala
Keyword(s):  
Single Crystals ◽  
Industrial Scale ◽  
Doped Silicon

Characterization of thin, doped silicon single crystals by x‐ray diffraction

1992 ◽  
Vol 72 (1) ◽  
pp. 54-60 ◽  
Author(s):  
Stefan Joksch ◽  
Walter Graeff ◽  
Peter Zaumseil ◽  
Ulrich Winter ◽  
Laszlo Csepregi ◽  
...  
Keyword(s):  
Single Crystals ◽  
X Ray Diffraction ◽  
X Ray ◽  
Doped Silicon

High-resolution transmission electron microscopic study of highly oxygen doped silicon layer

1989 ◽  
Vol 47 ◽  
pp. 692-693
Author(s):  
H. Takaoka ◽  
M. Tomita ◽  
T. Hayashi
Keyword(s):  
High Resolution ◽  
Oxygen Concentration ◽  
Silicon Layer ◽  
Detailed Structure ◽  
Electron Microscopic ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Doped Silicon ◽  
Argon Ion

High resolution transmission electron microscopy (HRTEM) is the effective technique for characterization of detailed structure of semiconductor materials. Oxygen is one of the important impurities in semiconductors. Detailed structure of highly oxygen doped silicon has not clearly investigated yet. This report describes detailed structure of highly oxygen doped silicon observed by HRTEM. Both samples prepared by Molecular beam epitaxy (MBE) and ion implantation were observed to investigate effects of oxygen concentration and doping methods to the crystal structure.The observed oxygen doped samples were prepared by MBE method in oxygen environment on (111) substrates. Oxygen concentration was about 1021 atoms/cm3. Another sample was silicon of (100) orientation implanted with oxygen ions at an energy of 180 keV. Oxygen concentration of this sample was about 1020 atoms/cm3 Cross-sectional specimens of (011) orientation were prepared by argon ion thinning and were observed by TEM at an accelerating voltage of 400 kV.

Growth and Characterization of Sulfur-doped GaSe Single Crystals

2015 ◽  
Vol 30 (8) ◽  
pp. 887 ◽  
Author(s):  
HUANG Chang-Bao ◽  
NI You-Bao ◽  
WU Hai-Xin ◽  
WANG Zhen-You ◽  
XIAO Rui-Chun ◽  
...  
Keyword(s):  
Single Crystals

Synthesis, growth and characterization of 4-dimethylaminobenzaldehyde-4-nitrophenylhydrazone single crystals

Optik ◽  
2014 ◽  
Vol 125 (12) ◽  
pp. 2912-2917 ◽  
Author(s):  
R. Gandhimathi ◽  
R. Dhanasekaran
Keyword(s):  
Single Crystals

scholarly journals Growth and characterization of propyl-para-hydroxybenzoate single crystals

2014 ◽  
Vol 37 (6) ◽  
pp. 1461-1469 ◽  
Author(s):  
N. Karunagaran ◽  
P. Ramasamy ◽  
R. Perumal Ramasamy
Keyword(s):  
Single Crystals

Optical characterization of Pr3+-doped yttria-stabilized zirconia single crystals

1997 ◽  
Vol 56 (10) ◽  
pp. 5856-5865 ◽  
Author(s):  
B. Savoini ◽  
J. E. Muñoz Santiuste ◽  
R. González
Keyword(s):  
Single Crystals ◽  
Optical Characterization ◽  
Yttria Stabilized Zirconia ◽  
Stabilized Zirconia
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