A 1.2V Operation 2.43 Times Higher Power Efficiency Adaptive Charge Pump Circuit with Optimized VTH at Each Pump Stage for Ferroelectric (Fe)-NAND Flash Memories

2009 ◽  
Author(s):  
S. Noda ◽  
T. Hatanaka ◽  
M. Takahashi ◽  
S. Sakai ◽  
K. Takeuchi
2011 ◽  
Vol 42 (8) ◽  
pp. 982-987 ◽  
Author(s):  
Yuh-Shyan Hwang ◽  
Dong-Shiuh Wu ◽  
Ho-Cheng Lin ◽  
Jiann-Jong Chen ◽  
Cheng-Chieh Yu

2009 ◽  
Vol 6 (6) ◽  
pp. 304-309 ◽  
Author(s):  
Ji-Hye Bong ◽  
Yong-Jin Kwon ◽  
Daejeong Kim ◽  
Kyeong-Sik Min

2011 ◽  
Vol 8 (16) ◽  
pp. 1343-1347 ◽  
Author(s):  
SungWook Choi ◽  
DuckJu Kim ◽  
JunSeob Chung ◽  
BongSeok Han ◽  
JeaGun Park

2011 ◽  
Vol 145 ◽  
pp. 557-561
Author(s):  
Yung Chin Chen ◽  
Kun Long Zheng ◽  
Zong Ye Wu ◽  
Tin Fang Zheng ◽  
Chie Nan Lai

This paper proposed a bootstrapped type high-efficient charge pump circuit based on the Dickson charge pump for high output power and pump-efficiency. By using bootstrapped technique, it can increase both of pump-efficiency and power-efficiency. The proposed bootstrapped based charge pump can avoid the threshold voltage drop and enable to generate a higher output voltage. Simulation by using HSPICE level 3 model shows that for conventional Dickson charge pump, it convert the input low DC-voltage (Vin=1.5V) up to 3.8 times of it (VOUT=5.77V), the pump efficiency was 76.93%. Our work, however, can convert the low input DC-voltage (Vin=1.5V) up near to 4.4 times of it (VOUT=6.62V), pump efficiency can reach up to 88.26%.


2011 ◽  
Vol 145 ◽  
pp. 562-566
Author(s):  
Yung Chin Chen ◽  
Kun Long Zheng ◽  
Zong Ye Wu ◽  
Kai Wei Chang ◽  
Chie Nan Lai

This paper proposes a new addressing method for high-efficiency switching-capacitor DC-DC voltage converter based on combination of CTS (charge-transfer-switch) charge pump and cross-coupled output stage is proposed in order to get a high output power and pump-efficiency. By using three level addressing methods, it can increase both of pump-efficiency and power-efficiency. The proposed three level addressing mixed-structure charge pump can operate at as high as 1MHz switching-frequency on the 0.1 μF pump-capacitors. Simulation by using HSPICE level 3 model shows that our work can convert the input low DC-voltage (Vin=1.5V) up near to 11.26 times of it (VOUT=16.9V), so that more output power can be generated with a little power loss. The newly proposed addressing method for DC-DC charge pump circuit is suitable for various low-voltage applications.


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