Multi-Step Deposition and Low-Temperature Two-Step (Ultraviolet Ozone cum Rapid Thermal) Annealing as a Promising Means for Gate-Last High-k/Metal Gate Application

2012 ◽  
Author(s):  
K. S. Yew ◽  
C. H. Tang ◽  
D. S. Ang
Keyword(s):  
Low Temperature ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Metal Gate ◽  
High K

Impact of Millisecond Flash-Assisted Rapid Thermal Annealing on SiGe Heterostructure Channel pMOSFETs With a High-k/Metal Gate

2011 ◽  
Vol 58 (9) ◽  
pp. 2917-2923 ◽  
Author(s):  
Se-Hoon Lee ◽  
Prashant Majhi ◽  
Domingo A. Ferrer ◽  
Pui-Yee Hung ◽  
Jeff Huang ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Metal Gate ◽  
High K

Substrates Dependent Low Temperature Fabrication of Silver Nanoparticles Using Rapid Thermal Annealing for Light Trapping Application

2018 ◽  
Vol 18 (11) ◽  
pp. 7739-7748 ◽  
Author(s):  
Bidyut Barman ◽  
Hrishikesh Dhasmana ◽  
Abhishek Verma ◽  
Amit Kumar ◽  
D. N Singh ◽  
...  
Keyword(s):  
Silver Nanoparticles ◽  
Low Temperature ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Light Trapping

scholarly journals Interfacial reactions of Ni on Si1−xGex (x=0.2, 0.3) at low temperature by rapid thermal annealing

2002 ◽  
Vol 92 (1) ◽  
pp. 214-217 ◽  
Author(s):  
H. B. Zhao ◽  
K. L. Pey ◽  
W. K. Choi ◽  
S. Chattopadhyay ◽  
E. A. Fitzgerald ◽  
...  
Keyword(s):  
Low Temperature ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Interfacial Reactions

Characterizations of Ultra-thin Dielectrics Grown by Microwave Afterglow O2/N2O Plasma Oxidation at Low Temperature with Rapid Thermal Annealing

1995 ◽  
Vol 387 ◽  
Author(s):  
Po-ching Chen ◽  
Klaus Yung-jane Hsu ◽  
Joseph J. Loferski ◽  
Huey-liang Hwang
Keyword(s):  
Low Temperature ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Photoelectron Spectroscopy ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Plasma Oxidation ◽  
X Ray ◽  
Thin Dielectrics

AbstractMicrowave afterglow plasma oxidation at a low temperature (600 °C ) and rapid thermal annealing (RTA) were combined to grow high quality ultra-thin dielectrics. This new approach has a low thermal budget. The mid-gap interface state density of oxides pretreated in N2O plasma was decreased to about 5×1010 cm−2eV−1 after rapid thermal annealing at 950 °C.It was found that RTA is very effective for relieving the oxide stress and reducing the interface state density. Nitrogen incorporated in oxides by the N2O plasma pretreatment of the Si surface helped to reduce the interface state density. Microstructures of ultra-thin oxide grown by microwave afterglow oxidation with or without RTA were revealed by extended-X-ray-absorption-finestructure (EXAFS) and X-ray photoelectron spectroscopy (XPS) analysis.

Low-temperature activation method of poly-Si films using rapid thermal annealing

1997 ◽  
Author(s):  
Kiichi Hirano ◽  
Naoya Sotani ◽  
Isao Hasegawa ◽  
Tomoyuki Nohda ◽  
Hisashi Abe ◽  
...  
Keyword(s):  
Low Temperature ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Activation Method ◽  
Temperature Activation ◽  
Si Films

Chemical Stability of Advanced Metal Gate and Ultra-thin Gate Dielectric Interface During Rapid Thermal Annealing

1998 ◽  
Vol 525 ◽  
Author(s):  
B. Claflin ◽  
M. Binger ◽  
G. Lucovsky
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Chemical Stability ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Elevated Temperatures ◽  
Gate Dielectric ◽  
Metal Gate ◽  
Dielectric Interface ◽  
On Line

ABSTRACTThe chemical stability of the compound metals TiNx and WNx on SiO2 and SiO2/Si3N4 (ON) dielectric stacks is studied by on-line Auger electron spectroscopy (AES) following sequential rapid thermal annealing treatments of 15 - 180 s up to 850 °C. The TiNx/SiO2 interface reacts at 850 °C and the reaction is kinetics driven. The TiNx/Si3N4 interface is more stable than TiNx/SiO2 even after a 180 s anneal at 850 °C. WNx is stable below 650 °C both on SiO2 and Si3N4, but above this temperature the film changes, possibly due to crystallization or interdiffusion. The changes in the WNx film are not controlled by kinetics. The compound metals are chemically more stable at elevated temperatures than pure Ti or W on SiO2.

Low Temperature Dopant Activation Using Variable Frequency Microwave Annealing

2010 ◽  
Vol 1245 ◽  
Author(s):  
Terry L. Alford ◽  
Karthik Sivaramakrishnan ◽  
Anil Indluru ◽  
Iftikhar Ahmad ◽  
Bob Hubbard ◽  
...  
Keyword(s):  
Low Temperature ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Effective Means ◽  
Variable Frequency ◽  
Dopant Activation ◽  
Ion Channeling ◽  
Transmission Electron ◽  
Limited Diffusion ◽  
Ion Implanted

AbstractVariable frequency microwaves (VFM) and rapid thermal annealing (RTA) were used to activate ion implanted dopants and re-grow implant-damaged silicon. Four-point-probe measurements were used to determine the extent of dopant activation and revealed comparable resistivities for 30 seconds of RTA annealing at 900 °C and 6-9 minutes of VFM annealing at 540 °C. Ion channeling analysis spectra revealed that microwave heating removes the Si damage that results from arsenic ion implantation to an extent comparable to RTA. Cross-section transmission electron microscopy demonstrates that the silicon lattice regains nearly all of its crystallinity after microwave processing of arsenic implanted silicon. Secondary ion mass spectroscopy reveals limited diffusion of dopants in VFM processed samples when compared to rapid thermal annealing. Our results establish that VFM is an effective means of low-temperature dopant activation in ion-implanted Si.

The Effect of Ternary Material (Zr, Y, and O) High-k Gate Dielectrics

2013 ◽  
Vol 699 ◽  
pp. 422-425 ◽  
Author(s):  
K.C. Lin ◽  
C.H. Chou ◽  
J.Y. Chen ◽  
C.J. Li ◽  
J.Y. Huang ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Electrical Property ◽  
Leakage Current ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Gate Dielectrics ◽  
Bottom Layer ◽  
Oxide Thickness ◽  
Equivalent Oxide Thickness ◽  
High K

In this research, the Y2O3 layer is doped with the zirconium through co-sputtering and rapid thermal annealing (RTA) at 550°C, 700°C, and 850°C. Then the Al electrode is deposited to generate two kinds of structures, Al/ZrN/ Y2O3/ Y2O3+Zr/p-Si and Al/ZrN/ Y2O3+Zr/ Y2O3/p-Si. According to the XRD results, when Zr was doped on the upper layer, the crystallization phenomenon was more significant than Zr was at the bottom layer, meaning that Zr may influence the diffusion of the oxygen. The AFM also shows that the surface roughness of Zr has worse performance. For the electrical property, the influence to overall leakage current is increased because the equivalent oxide thickness (EOT) is thinner.

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