scholarly journals Evaluation of green light Emitting diode with p-type GaN interlayer

2016 ◽  
Vol 54 (2) ◽  
pp. 274-277 ◽  
Author(s):  
Eunjin Kim ◽  
Jimin Kim ◽  
Soohwan Jang
2021 ◽  
Vol 118 (2) ◽  
pp. 021102
Author(s):  
Dong-Pyo Han ◽  
Ryoto Fujiki ◽  
Ryo Takahashi ◽  
Yusuke Ueshima ◽  
Shintaro Ueda ◽  
...  

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Fumiya Osawa ◽  
Kazuhiro Marumoto

Abstract Spin-states and charge-trappings in blue organic light-emitting diodes (OLEDs) are important issues for developing high-device-performance application such as full-color displays and white illumination. However, they have not yet been completely clarified because of the lack of a study from a microscopic viewpoint. Here, we report operando electron spin resonance (ESR) spectroscopy to investigate the spin-states and charge-trappings in organic semiconductor materials used for blue OLEDs such as a blue light-emitting material 1-bis(2-naphthyl)anthracene (ADN) using metal–insulator–semiconductor (MIS) diodes, hole or electron only devices, and blue OLEDs from the microscopic viewpoint. We have clarified spin-states of electrically accumulated holes and electrons and their charge-trappings in the MIS diodes at the molecular level by directly observing their electrically-induced ESR signals; the spin-states are well reproduced by density functional theory. In contrast to a green light-emitting material, the ADN radical anions largely accumulate in the film, which will cause the large degradation of the molecule and devices. The result will give deeper understanding of blue OLEDs and be useful for developing high-performance and durable devices.


2005 ◽  
Vol 23 (2) ◽  
pp. 167-171 ◽  
Author(s):  
Elke M. Vinck ◽  
Barbara J. Cagnie ◽  
Maria J. Cornelissen ◽  
Heidi A. Declercq ◽  
Dirk C. Cambier

2015 ◽  
Vol 20 (2) ◽  
pp. 020502 ◽  
Author(s):  
Noa Alon ◽  
Hamootal Duadi ◽  
Ortal Cohen ◽  
Tamar Samet ◽  
Neta Zilony ◽  
...  

Author(s):  
Qiaoli Niu ◽  
Hengsheng Wu ◽  
Yongtao Gu ◽  
Yanzhao Li ◽  
Wenjin Zeng ◽  
...  

2014 ◽  
Vol 93 ◽  
pp. 264-269 ◽  
Author(s):  
Henryk Teisseyre ◽  
Michal Bockowski ◽  
Toby David Young ◽  
Szymon Grzanka ◽  
Yaroslav Zhydachevskii ◽  
...  

In this communication, the use of gallium nitride doped with beryllium as an efficient converter for white light emitting diode is proposed. Until now beryllium in this material was mostly studied as a potential p-type dopant. Unfortunately, the realization of p-type conductivity in such a way seems impossible. However, due to a very intensive yellow emission, bulk crystals doped with beryllium can be used as light converters. In this communication, it is demonstrated that realisation of such diode is possible and realisation of a colour rendering index is close to that necessary for white light emission.


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