high property
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2021 ◽  
Vol 4 (3) ◽  
pp. 73-75
Author(s):  
Ruoke Hu ◽  
Fangke Li

In recent years, due to the rapid development of the real estate industry in China, land speculation has begun in addition to the significant growth in economy. However, this rapid development has led to an extreme rise in housing prices, largely owing to high property tax. This article analyzed the impact of property tax on the development of real estate industry and provided countermeasures.


2021 ◽  
pp. 2150370
Author(s):  
Kouros Khamoushi ◽  
Vojislav V. Mitic ◽  
Jelena Manojlovic ◽  
Vesna Paunovic ◽  
Zlata Cvetkovic ◽  
...  

The dielectric properties of Neodymium zinc titanium oxide (NZT) and Neodymium magnesium titanium oxide (NMT) were investigated. The single-phase ceramic was synthesized at various temperatures below 1650[Formula: see text]C. The result shows that the value of temperature of resonant frequency [Formula: see text] for NMT is higher than NZT. Our findings also indicate that the rare earth materials produce high property dielectric materials, despite the fact some elements produce lower negative value of temperature of resonant frequency [Formula: see text]. By doping a compound such as CaTiO3 which has a very positive temperature of resonant frequency ([Formula: see text] ppm/[Formula: see text]C) and a very high relative permittivity [Formula: see text], it is possible to tune NZT and MNT to achieve an excellent dielectric material. This work is under consideration. The results of this scientific research could be very important for modern advance applications in microelectronic miniaturization.


2021 ◽  
pp. 2100095
Author(s):  
Dan Wang ◽  
Qun Ma ◽  
Kanghui Tian ◽  
Zhiyuan Wang ◽  
Hongyu Sun ◽  
...  

Author(s):  
Yuejuan Wan ◽  
Zejian Zhang ◽  
Haichao Liu ◽  
Jiadong Zhou ◽  
Liqun Liu ◽  
...  

The sheet-liked organic semiconductor crystals with two-dimensional (2D) packed structures play an essential role in practical applications of high-property optoelectronic devices. Here, we reported a practical example in combination with...


2019 ◽  
Vol 272 ◽  
pp. 01005
Author(s):  
Xiao Fan ◽  
Xuyuan Chen

In this report, NFL-ZnWO4 was synthesized by a hydrothermal route and investigated for application in supercapacitors for the first time. The physical and chemical characterizations of the prepared nanomaterial were analyzed by SEM, EDS, XRD and XPS, respectively. Supercapacitors study of CV, GCD and EIS revealed that NFL-ZnWO4 exhibits good electrochemical properties. The high specific capacitance value of 107.7 F g-1 was achieved at 5 mV s−1. These findings demonstrated that ZnWO4 could be a promising electrode material candidate and highly desirable for application of high property supercapacitors in the future.


2018 ◽  
Vol 281 ◽  
pp. 1-8 ◽  
Author(s):  
Yi Lv ◽  
Yongkang Liu ◽  
Changmiao Chen ◽  
Taihong Wang ◽  
Ming Zhang

Asian Survey ◽  
2018 ◽  
Vol 58 (3) ◽  
pp. 464-485 ◽  
Author(s):  
Gang Chen

This paper examines the under-researched subject of the political and economic functions of Mainland Chinese enterprises in Hong Kong. The lack of effective cross-border supervision of these offshore state assets has exacerbated the longstanding principal–agent problem, resulting in spillover effects such as high property prices and worsening corporate corruption.


2017 ◽  
Vol 864 ◽  
pp. 25-29
Author(s):  
Xiao Qian Fu ◽  
Yang Li ◽  
Zhi Ming Li ◽  
Chun Wei Zhang ◽  
Xiao Hui Wang

To characterize the properties of the as-grown AlxGa1-xN material for producing high property AlxGa1-xN photocathode in ultraviolet (UV) detection, the Ar+ sputtering and X-ray photoelectric spectroscopy (XPS) scan are performed. XPS spectra indicates that although processed with chemical solutions, AlxGa1-xN still contains large amount of carbon and oxide on the surface, which can be completely removed by Ar+ sputtering within few minutes. Ga3d and Al2p curves show that there are other compounds of Ga and Al on the surface but both become very concentrated when sputtering continues. The proportion of Al increases and that of Ga decreases gradually from surface to AlN bulk, which testify the graded band gap profile of the AlxGa1-xN sample. There is always a very slight amount of oxygen in the AlN layer, which is regarded as native element during material growth. At the interface of AlN and sapphire, an abrupt transition appears which can influence the properties of the AlxGa1-xN photocathode when it works with the transmittance mode


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