Investigation of spin polarization in Gd-doped ZnO films for high-performance organic spintronic devices

2022 ◽  
Vol 276 ◽  
pp. 115536
Author(s):  
Norhidayah Che Ani ◽  
Mohd Zainizan Sahdan ◽  
Nafarizal Nayan ◽  
Feri Adriyanto ◽  
Kusnanto Mukti Wibowo
Keyword(s):  
Spin Polarization ◽  
High Performance ◽  
Zno Films ◽  
Spintronic Devices ◽  
Doped Zno

scholarly journals Spin Manipulation in Co-Doped ZnO

2010 ◽  
Vol 67 ◽  
pp. 192-197 ◽  
Author(s):  
Heidemarie Schmidt
Keyword(s):  
Spin Polarization ◽  
Electron Concentration ◽  
Schottky Diodes ◽  
Weak Localization ◽  
Spin Splitting ◽  
Zno Films ◽  
Polarized Electrons ◽  
Spin Polarized ◽  
Doped Zno ◽  
Co Doped

The magnetoresistance of n-type conducting, paramagnetic Co-doped ZnO films prepared by pulsed laser deposition on sapphire substrates has been studied experimentally and theoretically. Positive magnetoresistance (MR) of 124% has been observed in the film with the lowest electron concentration of 8.3·1017 cm−3, while only a negative MR of −1.9% was observed in the film with an electron concentration of 9.9·1019 cm−3 at 5 K. The positive MR is attributed to the quantum correction on the conductivity due to the <em>s</em>-<em>d </em>exchange interaction induced spin splitting of the conduction band. The negative MR is attributed to the magnetic field suppressed weak localization [1]. Voltage control of the electron concentration in Schottky diodes revealed a drastic change of the magnetoresistance and demonstrated the electrically controllable magnetotransport behavior in Co-doped ZnO [2]. The magnetically controllable spin polarization in Co-doped ZnO has been demonstrated at 5 K in magnetic tunnel junctions with Co-doped ZnO as a bottom electrode and Co as a top electrode [3]. There spin-polarized electrons were injected from Co-doped ZnO to a crystallized Al2O3 layer and tunnelled through an amorphous Al2O3 barrier. Our studies demonstrate the spin polarization and manipulation in Co-doped ZnO.

Hydrogen enhancing Ga doping efficiency and electron mobility in high-performance transparent conducting Ga-doped ZnO films

2021 ◽  
Vol 860 ◽  
pp. 158518
Author(s):  
Anh Tuan Thanh Pham ◽  
Dung Van Hoang ◽  
Truong Huu Nguyen ◽  
Oanh Kieu Truong Le ◽  
Deniz P. Wong ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Performance ◽  
Zno Films ◽  
Transparent Conducting ◽  
Doped Zno ◽  
Ga Doping

Solution-Processed LiF-Doped ZnO Films for High Performance Low Temperature Field Effect Transistors and Inverted Solar Cells

2013 ◽  
Vol 5 (14) ◽  
pp. 6687-6693 ◽  
Author(s):  
Jingjing Chang ◽  
Zhenhua Lin ◽  
Chunxiang Zhu ◽  
Chunyan Chi ◽  
Jie Zhang ◽  
...  
Keyword(s):  
Temperature Field ◽  
Solar Cells ◽  
Low Temperature ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Zno Films ◽  
Solution Processed ◽  
Doped Zno

Workfunction of Al-Doped ZnO Films Deposited by Atomic Layer Deposition

2018 ◽  
Author(s):  
Peter George Gordon ◽  
Goran Bacic ◽  
Gregory P. Lopinski ◽  
Sean Thomas Barry
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Atomic Ratio ◽  
Aluminum Concentration ◽  
Zno Films ◽  
Transparent Conductor ◽  
Kelvin Probe ◽  
Layer Deposition ◽  
Earth Abundant ◽  
Doped Zno

Al-doped ZnO (AZO) is a promising earth-abundant alternative to Sn-doped In<sub>2</sub>O<sub>3</sub> (ITO) as an n-type transparent conductor for electronic and photovoltaic devices; AZO is also more straightforward to deposit by atomic layer deposition (ALD). The workfunction of this material is particularly important for the design of optoelectronic devices. We have deposited AZO films with resistivities as low as 1.1 x 10<sup>-3</sup> Ωcm by ALD using the industry-standard precursors trimethylaluminum (TMA), diethylzinc (DEZ), and water at 200<sup>◦</sup>C. These films were transparent and their elemental compositions showed reasonable agreement with the pulse program ratios. The workfunction of these films was measured using a scanning Kelvin Probe (sKP) to investigate the role of aluminum concentration. In addition, the workfunction of AZO films prepared by two different ALD recipes were compared: a “surface” recipe wherein the TMA was pulsed at the top of each repeating AZO stack, and a interlamellar recipe where the TMA pulse was introduced halfway through the stack. As aluminum doping increases, the surface recipe produces films with a consistently higher workfunction as compared to the interlamellar recipe. The resistivity of the surface recipe films show a minimum at a 1:16 Al:Zn atomic ratio and using an interlamellar recipe, minimum resistivity was seen at 1:19. The film thicknesses were characterized by ellipsometry, chemical composition by EDX, and resistivity by four-point probe.<br>

Effect of Sputtering Pressure on Al-doped ZnO Films by DC Magnetron Sputtering

2013 ◽  
Vol 27 (10) ◽  
pp. 1112-1116 ◽  
Author(s):  
Ke-Wei SUN ◽  
Wan-Cheng ZHOU ◽  
Shan-Shan HUANG ◽  
Xiu-Feng TANG
Keyword(s):  
Magnetron Sputtering ◽  
Zno Films ◽  
Dc Magnetron Sputtering ◽  
Doped Zno ◽  
Sputtering Pressure

Cobalt doped ZnO films asantireflection coating application for solar cell

2020 ◽  
Author(s):  
M. Ismail. Fathima ◽  
K. S. Joseph Wilson ◽  
A. M. S. Arulanantham
Keyword(s):  
Solar Cell ◽  
Zno Films ◽  
Coating Application ◽  
Doped Zno
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