Computational studies on nitrogen (N)-substituted 2,6-diphenylanthracene: a novel precursor of organic field effect transistor materials

2022 ◽  
Author(s):  
Xueqin Ran ◽  
Mohamad Akbar Ali ◽  
Xin-Zhe Peng ◽  
Guo-Jing Yu ◽  
Jiao-Yang Ge ◽  
...  

The investigation shows that nitrogen (N)-substituted π-conjugated semiconductor materials have improved optical and electronic performance and work efficiently in organic field-effect transistors (OFETs).

2018 ◽  
Vol 6 (4) ◽  
pp. 799-807 ◽  
Author(s):  
Sooji Nam ◽  
Yong Jin Jeong ◽  
Jaemin Jung ◽  
Se Hyun Kim ◽  
Jinho Ahn ◽  
...  

High-crystalline TIPS-PEN crystal stripes are directly printed with controllable inter-stripe spacingviaprogrammed dip-coating for application in organic field-effect transistors.


MRS Advances ◽  
2017 ◽  
Vol 2 (23) ◽  
pp. 1249-1257 ◽  
Author(s):  
F. Michael Sawatzki ◽  
Alrun A. Hauke ◽  
Duy Hai Doan ◽  
Peter Formanek ◽  
Daniel Kasemann ◽  
...  

ABSTRACTTo benefit from the many advantages of organic semiconductors like flexibility, transparency, and small thickness, electronic devices should be entirely made from organic materials. This means, additionally to organic LEDs, organic solar cells, and organic sensors, we need organic transistors to amplify, process, and control signals and electrical power. The standard lateral organic field effect transistor (OFET) does not offer the necessary performance for many of these applications. One promising candidate for solving this problem is the vertical organic field effect transistor (VOFET). In addition to the altered structure of the electrodes, the VOFET has one additional part compared to the OFET – the source-insulator. However, the influence of the used material, the size, and geometry of this insulator on the behavior of the transistor has not yet been examined. We investigate key-parameters of the VOFET with different source insulator materials and geometries. We also present transmission electron microscopy (TEM) images of the edge area. Additionally, we investigate the charge transport in such devices using drift-diffusion simulations and the concept of a vertical organic light emitting transistor (VOLET). The VOLET is a VOFET with an embedded OLED. It allows the tracking of the local current density by measuring the light intensity distribution.We show that the insulator material and thickness only have a small influence on the performance, while there is a strong impact by the insulator geometry – mainly the overlap of the insulator into the channel. By tuning this overlap, on/off-ratios of 9x105 without contact doping are possible.


2021 ◽  
Author(s):  
Suman Yadav ◽  
Shivani Sharma ◽  
Satinder K Sharma ◽  
Chullikkattil P. Pradeep

Solution-processable organic semiconductors capable of functioning at low operating voltages (~5 V) are in demand for organic field-effect transistor (OFET) applications. Exploration of new classes of compounds as organic thin-film...


2013 ◽  
Vol 25 (2) ◽  
pp. 194-199 ◽  
Author(s):  
Md. Minarul Islam

Organic field effect transistors with an active layer based on the tetracene single-crystal were fabricated. It was found that organosilane self-assemble monolayer (SAM) modified device with tetracene single-crystals gave higher mobility and on/off ratio rather than untreated device. SAM modified tetracene single-crystal transistors with parylene gate insulator showed the highest mobility of 0.66 cm2 V-1 s-1 and high on/off ratio of ~104. This finding demonstrates that SAM treatment decrease the charge leakage between source and drain which help to decrease the off current with greater extent and increase the on current slightly of the tetracene single-crystal field-effect transistors. Journal of Bangladesh Chemical Society, Vol. 25(2), 194-199, 2012 DOI: http://dx.doi.org/10.3329/jbcs.v25i2.15086


Author(s):  
Yue Xi ◽  
Tao Wang ◽  
Qi Mu ◽  
Congcong Huang ◽  
Shuming Duan ◽  
...  

Organic field-effect transistor (OFET) is one of the promising candidates for next generation electronics due to its solution processability and good performance superior to amorphous Si devices. Patterning the organic...


2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Fabrizio Antonio Viola ◽  
Jonathan Barsotti ◽  
Filippo Melloni ◽  
Guglielmo Lanzani ◽  
Yun-Hi Kim ◽  
...  

AbstractRecent advancements in the field of electronics have paved the way to the development of new applications, such as tattoo electronics, where the employment of ultraconformable devices is required, typically achievable with a significant reduction in their total thickness. Organic materials can be considered enablers, owing to the possibility of depositing films with thicknesses at the nanometric scale, even from solution. However, available processes do not allow obtaining devices with thicknesses below hundreds of nanometres, thus setting a limit. Here, we show an all-organic field effect transistor that is less than 150 nm thick and that is fabricated through a fully solution-based approach. Such unprecedented thickness permits the device to conformally adhere onto nonplanar surfaces, such as human skin, and to be bent to a radius lower than 1 μm, thereby overcoming another limitation for field-effect transistors and representing a fundamental advancement in the field of ultrathin and tattoo electronics.


Materials ◽  
2021 ◽  
Vol 14 (23) ◽  
pp. 7465
Author(s):  
Tomas Vincze ◽  
Michal Micjan ◽  
Juraj Nevrela ◽  
Martin Donoval ◽  
Martin Weis

Organic field-effect transistors have been envisioned for advanced photodetectors because the organic semiconductors provide unique absorption characteristics, low-cost fabrication, or compatibility with flexible substrates. However, the response time of organic phototransistors still does not reach the required application level. Here, we report the photoresponse of copper phthalocyanine phototransistor in a steady state and under pulsed illumination. The detailed analysis based on the random walk among a field of traps was used to evaluate the dimensionality of electron transport in a device.


2015 ◽  
Vol 3 (27) ◽  
pp. 7118-7127 ◽  
Author(s):  
Sk. Md. Obaidulla ◽  
P. K. Giri

A low operating voltage (∼10 V) top contact-bottom gate ambipolar organic field-effect transistor (OFET) is fabricated using vacuum-deposited small molecules, SnCl2Pc and CuPc. The ambipolar OFET exhibits balanced carrier mobility and low bias-stress (characteristics time constant ∼105 s) for both n-channel and p-channels.


2016 ◽  
Vol 52 (26) ◽  
pp. 4800-4803 ◽  
Author(s):  
Kazuaki Oniwa ◽  
Hiromasa Kikuchi ◽  
Hidekazu Shimotani ◽  
Susumu Ikeda ◽  
Naoki Asao ◽  
...  

A new co-oligomer BPy2T with two 2-positional pyrenes as terminal groups and bithiophene as a central unit showed a high hole mobility of 3.3 cm2 V−1 s−1 in a single crystal field effect transistor.


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