Anomalous in-plane lattice thermal conductivity in an atomically thin two-dimensional α-GeTe layer

2020 ◽  
Vol 22 (21) ◽  
pp. 12273-12280 ◽  
Author(s):  
Brahim Marfoua ◽  
Young Soo Lim ◽  
Jisang Hong

The bilayer α-GeTe displayed an exceptionally low lattice thermal conductivity never reported in the atomically thin 2D materials.

2018 ◽  
Vol 20 (43) ◽  
pp. 27611-27620 ◽  
Author(s):  
Armin Taheri ◽  
Carlos Da Silva ◽  
Cristina H. Amon

A first-principles study is conducted to investigate the effect of biaxial tensile strain on phonon properties and thermal conductivity of buckled phosphorene and arsenene, novel two-dimensional (2D) materials of group-VA.


2003 ◽  
Vol 793 ◽  
Author(s):  
Ronggui Yang ◽  
Gang Chen

ABSTRACTA phonon Boltzmann transport model is established to study the lattice thermal conductivity of nanocomposites with nanowires embedded in a host semiconductor material. Special attention has been paid to cell-cell interaction using periodic boundary conditions. The simulation shows that the temperature profiles in nanocomposites are very different from those in conventional composites, due to ballistic phonon transport at nanoscale. The thermal conductivity of periodic 2-D nanocomposites is a strong function of the size of the embedded wires and the volumetric fraction of the constituent materials. At constant volumetric fraction the smaller the wire diameter, the smaller is the thermal conductivity of periodic two-dimensional nanocomposites. For fixed silicon wire dimension, the lower the atomic percentage of germanium, the lower the thermal conductivity of the nanocomposites. The results of this study can be used to direct the development of high efficiency thermoelectric materials.


2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Aravind Krishnamoorthy ◽  
Nitish Baradwaj ◽  
Aiichiro Nakano ◽  
Rajiv K. Kalia ◽  
Priya Vashishta

AbstractEngineering thermal transport in two dimensional materials, alloys and heterostructures is critical for the design of next-generation flexible optoelectronic and energy harvesting devices. Direct experimental characterization of lattice thermal conductivity in these ultra-thin systems is challenging and the impact of dopant atoms and hetero-phase interfaces, introduced unintentionally during synthesis or as part of deliberate material design, on thermal transport properties is not understood. Here, we use non-equilibrium molecular dynamics simulations to calculate lattice thermal conductivity of $${\mathrm {(Mo|W)Se_2}}$$ ( Mo | W ) Se 2 monolayer crystals including $${\mathrm {Mo}}_{1-x}{\mathrm {W}}_x{\mathrm {Se_2}}$$ Mo 1 - x W x Se 2 alloys with substitutional point defects, periodic $${\mathrm {MoSe_2}|\mathrm {WSe_2}}$$ MoSe 2 | WSe 2 heterostructures with characteristic length scales and scale-free fractal $${\mathrm {MoSe_2}}|{\mathrm {WSe_2}}$$ MoSe 2 | WSe 2 heterostructures. Each of these features has a distinct effect on phonon propagation in the crystal, which can be used to design fractal and periodic alloy structures with highly tunable thermal conductivities. This control over lattice thermal conductivity will enable applications ranging from thermal barriers to thermoelectrics.


2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Li-Chuan Zhang ◽  
Guangzhao Qin ◽  
Wu-Zhang Fang ◽  
Hui-Juan Cui ◽  
Qing-Rong Zheng ◽  
...  

2013 ◽  
Vol 1456 ◽  
Author(s):  
James D. Jeffers ◽  
Leonard Olona ◽  
Zhihua Cai ◽  
Khosrow Namjou ◽  
Patrick J. McCann

ABSTRACTThe temperature dependence of cross-plane lattice thermal conductivity for thin film IV-VI semiconductors grown by molecular beam epitaxy was measured. Samples consisting of PbSe/PbSrSe multiple quantum wells (MQWs) on PbSe/PbSnSe superlattices (SLs) were grown with variations in SL layer thickness and the number of SL pairs. Localized lattice temperatures within the MQW layers were extracted from analysis of continuous wave photoluminescence (PL) emission spectra at heat sink temperatures between 100 K and 250 K. These data, finite element analysis, and electrical characterization were used to determine cross-plane lattice thermal conductivity of two different SL materials. A SL material with three different PbSe/PbSnSe thicknesses (1.2/1.2, 1.8/1.8, and 2.4/2.4 nm) exhibited a fairly constant lattice thermal conductivity from 1.2 to 1.3 W/mK as the sample was cooled from 250 K to 100 K. Another SL material with five different PbSe/PbSnSe thicknesses (0.5/0.5, 1.0/1.0, 1.6/1.6, 2.1/2.1, and 2.6/2.6 nm) exhibited very low lattice thermal conductivities from 0.46 to 0.47 W/mK 250 K to 100 K. These results are consistent with reflection of low energy heat transporting acoustic phonons within the SL material.


2018 ◽  
Vol 124 (16) ◽  
pp. 165101 ◽  
Author(s):  
Guangqian Ding ◽  
Junjie He ◽  
G. Y. Gao ◽  
Kailun Yao

Author(s):  
Shipeng Bi ◽  
Zhehao Sun ◽  
Kunpeng Yuan ◽  
Zheng Chang ◽  
Xiaoliang Zhang ◽  
...  

Single-layer o-ScC2 and o-ScN2 express extremely low lattice TCs, and o-ScN2 expresses lower TC comparing with o-ScC2 in the Y direction. Both of the two materials show significant anisotropy.


CrystEngComm ◽  
2019 ◽  
Vol 21 (41) ◽  
pp. 6261-6268
Author(s):  
Chen Di ◽  
Jia-Hui Pan ◽  
Song-Tao Dong ◽  
Yang-Yang Lv ◽  
Xue-Jun Yan ◽  
...  

Revealing the impact of Bi–O/Bi–O interfaces with van der Waals interactions on the formation of ultralow cross-plane lattice thermal conductivity.


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