domino circuit
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Author(s):  
Chandan R ◽  
Balachandra G Bhat ◽  
Ashwin J ◽  
Aravind M ◽  
Amit Jain

Author(s):  
Ankur Kumar ◽  
Pratosh K. Pal ◽  
Vikrant Varshney ◽  
Avaneesh K. Dubey ◽  
R. K. Nagaria
Keyword(s):  

As semiconductor industries is developing day by day to meet the requirement of today’s world. As scaling of ICs day by day to introduce functionality of the device while fabrication more and more component which results in shorter the life of the battery operated device which has to be improved. Here in this article we have measured performance parameters like power consumption, UNG, Evaluation Delay, standby power and speed of various domino circuits provided for various inputs like 8 &16 input OR gate. When we compared power, delay, and PDP of different topologies of domino circuit design with the simulation results which is performed by using SPICE tool at 32nm CNTFET process technology with supply voltage 0.9V and 27⁰ C of temperature at 100 MHz. All the simulation results is done in CMOS & CNTFET technology, it is observed that saving of average power upto 90.46% with same delay, with improvement of 5.8 × Noise-immunity with scaling of technology.


Author(s):  
Deepika Bansal ◽  
Bal Chand Nagar ◽  
Brahamdeo Prasad Singh ◽  
Ajay Kumar

Background & Objective: In this paper, a modified pseudo domino configuration has been proposed to improve the leakage power consumption and Power Delay Product (PDP) of dynamic logic using Carbon Nanotube MOSFETs (CN-MOSFETs). The simulations for proposed and published domino circuits are verified by using Synopsys HSPICE simulator with 32nm CN-MOSFET technology which is provided by Stanford. Methods: The simulation results of the proposed technique are validated for improvement of wide fan-in domino OR gate as a benchmark circuit at 500 MHz clock frequency. Results: The proposed configuration is suitable for cascading of the high performance wide fan-in circuits without any charge sharing. Conclusion: The performance analysis of 8-input OR gate demonstrate that the proposed circuit provides lower static and dynamic power consumption up to 62 and 40% respectively, and PDP improvement is 60% as compared to standard domino circuit.


Clock Delayed Dual Keeper domino logic style with Static Switching mechanism (CDDK_SS) using delayed enabling of the keeper circuit and modified discharge path has been proposed in this paper. In CDDK domino circuit, the principle of delayed enabling of keeper circuit offers reduced contention between keeper circuit and Pull Down Network (PDN). The modified discharge path at the output node eradicates the switching at the output node for identical TRUE inputs during the pre-charge phase. This facilitates in obtaining static like output in contrast with conventional domino logic. The simulation results of Arithmetic and Logic Unit (ALU) subsystems demonstrate 17.7% reduction in dynamic power consumption while compared to conventional domino logic. Furthermore, 62% enhancement in speed performance has been achieved with good robustness. Design and simulation have been executed using Cadence® Virtuoso, with UMC 90nm technology node library.


2019 ◽  
Vol 13 (8) ◽  
pp. 1134-1141 ◽  
Author(s):  
A. Anita Angeline ◽  
V.S. Kanchana Bhaaskaran
Keyword(s):  

A novel modified keeper technique has been proposed in this paper for domino logic circuits implemented as wide fan in OR gate. Few circuit parameters as capacitivie loading and delay are major concerns for OR gates in deeper technology nodes. This design focuses on a comparator block with modified dual keeperto maintain the output logic state. Additionally it comprises of a delay loop to limit the contention current. The proposed design reduces the input capacitive loading and total power consumption by the circuit, while keeping the speed of operation same. It was compared with latest domino circuit techniques and the proposed design MKCD has achieved a reduction of 41% in power consumption in 64 bit configuration as compared to conventional domino circuit SFLD. Average noise immunity has also increased by more than twice as compared to SFLD. The simulations were performed using 90nm PTM low power models.


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