Low Power Wide Fan-in Domino OR Gate Using CN-MOSFETs

2020 ◽  
Vol 10 (1) ◽  
pp. 55-62
Author(s):  
Deepika Bansal ◽  
Bal Chand Nagar ◽  
Brahamdeo Prasad Singh ◽  
Ajay Kumar
Keyword(s):  
Power Consumption ◽  
High Performance ◽  
Dynamic Logic ◽  
Clock Frequency ◽  
Charge Sharing ◽  
Benchmark Circuit ◽  
Domino Circuit ◽  
Power Delay Product ◽  
Domino Circuits ◽  
Or Gate

Background & Objective: In this paper, a modified pseudo domino configuration has been proposed to improve the leakage power consumption and Power Delay Product (PDP) of dynamic logic using Carbon Nanotube MOSFETs (CN-MOSFETs). The simulations for proposed and published domino circuits are verified by using Synopsys HSPICE simulator with 32nm CN-MOSFET technology which is provided by Stanford. Methods: The simulation results of the proposed technique are validated for improvement of wide fan-in domino OR gate as a benchmark circuit at 500 MHz clock frequency. Results: The proposed configuration is suitable for cascading of the high performance wide fan-in circuits without any charge sharing. Conclusion: The performance analysis of 8-input OR gate demonstrate that the proposed circuit provides lower static and dynamic power consumption up to 62 and 40% respectively, and PDP improvement is 60% as compared to standard domino circuit.

Improved Domino Logic Circuits and its Application in Wide Fan-In OR Gates

2020 ◽  
Vol 12 (1) ◽  
pp. 58-67
Author(s):  
Deepika Bansal ◽  
Bal Chand Nagar ◽  
Brahamdeo Prasad Singh ◽  
Ajay Kumar
Keyword(s):  
Power Consumption ◽  
High Speed ◽  
High Performance ◽  
Voltage Drop ◽  
Main Concern ◽  
Clock Frequency ◽  
Domino Logic ◽  
Evaluation Phase ◽  
Power Delay Product ◽  
Domino Circuits

Background: Main concern in efficient VLSI circuit designing is low-power consumption, high-speed and noise tolerance capability. Objective: In this paper, two efficient and high-performance topologies are proposed for cascaded domino logic using carbon nanotube MOSFETs (CN-MOSFETs). The first topology is designed to remove the intermediate charge sharing problem without any keeper circuit, whereas the second one holds the true logic level of the evaluation phase without any voltage drop for next precharge phase. The proposed topologies are suitable for cascading of the high-performance domino circuits. Methods: The proposed domino circuits are tested and verified using Synopsys HSPICE simulator with 32nm CN-MOSFET technology provided by Stanford University. Conclusion: The power delay product of proposed DL-I and DL-II improves by 32.59 % and 40.98 % for 8-input OR gate as compared to standard logic respectively at the clock frequency of 500 MHz. The simulation results validate that the proposed circuits improve the performance of pseudo domino logic with respect to leakage power consumption, delay and unity noise gain.

scholarly journals A New Ultra Low-Power and Noise Tolerant Circuit Technique for CMOS Domino Logic

2013 ◽  
pp. 177-182
Author(s):  
Preetisudha Meher ◽  
K. K. Mahapatra
Keyword(s):  
High Performance ◽  
Dynamic Logic ◽  
Charge Sharing ◽  
Cmos Inverter ◽  
Small Noise ◽  
Domino Logic ◽  
Ultra Low Power ◽  
Noise Tolerant ◽  
Power Delay Product ◽  
Circuit Technique

Dynamic logic style is used in high performance circuit design because of its fast speed and less transistors requirement as compared to CMOS logic style. But it is not widely accepted for all types of circuit implementations due to its less noise tolerance and charge sharing problems. A small noise at the input of the dynamic logic can change the desired output. Domino logic uses one static CMOS inverter at the output of dynamic node which is more noise immune and consuming very less power as compared to other proposed circuit. In this paper we have proposed a novel circuit for domino logic which has less noise at the output node and has very less power-delay product (PDP) as compared to previous reported articles. Low PDP is achieved by using semi-dynamic logic buffer and also reducing leakage current when PDN is not conducting.

A New Keeper Domino Logic Based Full Adder for High Speed Arithmetic Circuits

2020 ◽  
Vol 12 ◽  
Author(s):  
Deepika Bansal ◽  
Bal Chand Nagar ◽  
Ajay Kumar ◽  
Brahamdeo Prasad Singh
Keyword(s):  
Power Consumption ◽  
High Speed ◽  
High Efficiency ◽  
Dynamic Logic ◽  
Full Adder ◽  
Leakage Power ◽  
Low Leakage ◽  
Dynamic Circuits ◽  
Power Delay Product ◽  
Domino Circuits

Objective: A new efficient keeper circuit has been proposed in this article for achieving low leakage power consumption and to improve power delay product of the dynamic logic using carbon nanotube MOSFET. Method: As a benchmark, an one-bit adder has been designed and characterized with both technologies Si-MOSFET and CN-MOSFET using proposed and existing dynamic circuits. Furthermore, a comparison has been made to demonstrate the superiority of CN-MOSFET technology with Synopsys HSPICE tool for multiple bit adders available in the literature. Result: The simulation results show that the proposed keeper circuit provides lower static and dynamic power consumption up to 57 and 40% respectively, as compared to the domino circuits using 32nm CN-MOSFET technology provided by Stanford University. Moreover, the proposed keeper configuration provides better performance using SiMOSFET and CN-MOSFET technologies. Conclusion: A comparison of the proposed keeper with previously published designs is also given in terms of power consumption, delay and power delay product with the improvement up to 75, 18 and 50% respectively. The proposed circuit uses only two transistors, so it requires less area and gives high efficiency.

scholarly journals Static Switching Dynamic Buffer Circuit

2013 ◽  
Vol 2013 ◽  
pp. 1-11
Author(s):  
A. K. Pandey ◽  
R. A. Mishra ◽  
R. K. Nagaria
Keyword(s):  
Power Consumption ◽  
Power Supply ◽  
Loading Condition ◽  
Cmos Technology ◽  
Clock Frequency ◽  
Logic Function ◽  
Output Node ◽  
Switching Dynamic ◽  
Power Delay Product ◽  
Frequency Temperature

We proposed footless domino logic buffer circuit. It minimizes redundant switching at the dynamic and the output nodes. The proposed circuit avoids propagation of precharge pulse to the output node and allows the dynamic node which saves power consumption. Simulation is done using 0.18 µm CMOS technology. We have calculated the power consumption, delay, and power delay product of the proposed circuit and compared the results with the existing circuits for different logic function, loading condition, clock frequency, temperature, and power supply. Our proposed circuit reduces power consumption and power delay product as compared to the existing circuits.

scholarly journals A Glitch-Free Novel DET-FF in 22 nm CMOS for Low-Power Application

2018 ◽  
Vol 2018 ◽  
pp. 1-6 ◽  
Author(s):  
Sumitra Singar ◽  
N. K. Joshi ◽  
P. K. Ghosh
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
High Performance ◽  
Vlsi Design ◽  
Total System ◽  
Clock Frequency ◽  
Flip Flop ◽  
Digital Vlsi ◽  
Feedback Structure ◽  
Power Application

Dual edge triggered (DET) techniques are most liked choice for the researchers in the field of digital VLSI design because of its high-performance and low-power consumption standard. Dual edge triggered techniques give the similar throughput at half of the clock frequency as compared to the single edge triggered (SET) techniques. Dual edge triggered techniques can reduce the 50% power consumption and increase the total system power savings. The low-power glitch-free novel dual edge triggered flip-flop (DET-FF) design is proposed in this paper. Still now, existing DET-FF designs are constructed by using either C-element circuit or 1P-2N structure or 2P-1N structure, but the proposed novel design is designed by using the combination of C-element circuit and 2P-1N structure. In this design, if any glitch affects one of the structures, then it is nullified by the other structure. To control the input loading, the two circuits are merged to share the transistors connected to the input. In the proposed design, we have used an internal dual feedback structure. The proposed design reduces the delay and power consumption and increases the speed and efficiency of the system.

A NEW ROBUST AND HIGH-PERFORMANCE HYBRID FULL ADDER CELL

2011 ◽  
Vol 20 (04) ◽  
pp. 641-655 ◽  
Author(s):  
REZA FAGHIH MIRZAEE ◽  
MOHAMMAD HOSSEIN MOAIYERI ◽  
HAMID KHORSAND ◽  
KEIVAN NAVI
Keyword(s):  
Power Consumption ◽  
Great Improvement ◽  
High Performance ◽  
Full Adder ◽  
Good Choice ◽  
Lower Power ◽  
Pvt Variations ◽  
Power Delay Product ◽  
Full Swing ◽  
Hspice Simulation

A new 1-bit hybrid Full Adder cell is presented in this paper with the aim of reaching a robust and high-performance adder structure. While most of recent Full Adders are proposed with the purpose of using fewer transistors, they suffer from some disadvantages such as output or internal non-full-swing nodes and poor driving capability. Considering these drawbacks, they might not be a good choice to operate in a practical environment. Lowering the number of transistors can inherently lead to smaller occupied area, higher speed and lower power consumption. However, other parameters, such as robustness to PVT variations and rail-to-rail operation, should also be considered. While the robustness is taken into account, HSPICE simulation demonstrates a great improvement in terms of speed and power-delay product (PDP).

scholarly journals Energy Efficient SRAM

2019 ◽  
Vol 8 (9) ◽  
pp. 1086-1091
Keyword(s):  
Power Consumption ◽  
High Performance ◽  
Dynamic Logic ◽  
Cmos Technology ◽  
Digital Circuit ◽  
Static Noise Margin ◽  
Noise Margin ◽  
And Performance ◽  
The Stability ◽  
Static Noise

Memories are an essential unit of any digital circuit, thus their power consumption must be considered during the designing process of the cells. To improve performance, reduce delay and increase stability, it is advisable to decrease the power consumed by the memory. Due to high demand of speed, high performance, there’s a need to decrease the size of the device, thereby increasing the devices placed per chip. This high integration makes chips more complex but improves device performance. Design of SRAM cells with speed and low power is crucial so as to replace DRAMs. The layout of SRAM has advanced to meet the requirements of the present industry in accordance with parameters like delay, power consumption and stability etc. This paper presents the aim of analyzing different technologies used to make SRAM more efficient in terms of parameters such as static noise margin, latency and dissipation of power. The stability investigation of SRAM cells are usually derived from the Static Noise Margin (SNM) analysis. Here we observe a SRAM design which has used dynamic logic and pass transistor logic. We further study the effects made on this design by employing various technologies such as AVL-S, AVL-G, AVL and MT-CMOS, at 180nm CMOS technology to achieve enhancements in delay, power consumption and performance. The proposed circuits are simulated and the results obtained have been analyzed to show significant improvement over conventional SRAM designs. Cadence Virtuoso simulation is used to confirm all the results obtained in this paper for the simulation of 180 nm CMOS technology SRAMs.

scholarly journals HTNURL: Design of a High-Performance Low-Cost Triple-Node Upset Self-Recoverable Latch

Electronics ◽  
2021 ◽  
Vol 10 (20) ◽  
pp. 2457
Author(s):  
Hui Xu ◽  
Zehua Peng ◽  
Huaguo Liang ◽  
Zhengfeng Huang ◽  
Cong Sun ◽  
...  
Keyword(s):  
Power Consumption ◽  
High Performance ◽  
Feedback Loop ◽  
Low Cost ◽  
Low Power Consumption ◽  
Clock Gating ◽  
Single Node ◽  
Area Overhead ◽  
Power Delay Product ◽  
Reduced Power Consumption

A high-performance and low power consumption triple-node upset self-recoverable latch (HTNURL) is proposed. It can effectively tolerate single-node upset (SNU), double-node upset (DNU), and triple-node upset (TNU). This latch uses the C-element to construct a feedback loop, which reduces the delay and power consumption by fast path and clock gating techniques. Compared with the TNU-recoverable latches, HTNURL has a lower delay, reduced power consumption, and full self-recoverability. The delay, power consumption, area overhead, and area-power-delay product (APDP) of the HTNURL is reduced by 33.87%, 63.34%, 21.13%, and 81.71% on average.

scholarly journals Ultra high speed full adder for biomedical applications

2021 ◽  
Vol 10 (1) ◽  
pp. 25
Author(s):  
Basavoju Harish ◽  
M. S. S. Rukmini
Keyword(s):  
Power Consumption ◽  
High Speed ◽  
High Performance ◽  
Supply Voltage ◽  
Medical Engineering ◽  
Digital Signal ◽  
Full Adder ◽  
Digital Devices ◽  
Ripple Carry Adder ◽  
Power Delay Product

In the field of bio medical engineering high performance CPU for digital signal processing plays a significant role. Frequency efficient circuit is a paramount requirement for the portable digital devices employing various digital processors. In this work a novel high speed one-bit 10T full adder with complemented output was described. The circuit was constructed with XOR gates which were built using two CMOS transistors. The XOR gate was constructed using 2T multiplexer circuit style. It was observed that power consumption of the designed circuit at 180nm with supply voltage 1.8V is 183.6 uW and delay was 1.809 ps whereas power consumption at 90nm with supply voltage 1.2V is 25.74 uW and delay was 8.245 ps. The observed Power Delay Product (PDP) in 180nm (at supply voltage 1.8V) is 0.33 and in 90nm (at supply voltage 1.2V) is 0.212. The work was extended by implementing a 32-bit Ripple Carry Adder (RCA) and was found that the delay at 180nm is 93.7ps and at 90nm is 198ps. The results were drawn at 180nm and also 90nm technology using CAD tool. The results say that the present work offered significant enhancement in speed and PDP compared with existing designs.

SPTPL: A NEW PULSED LATCH TYPE FLIP-FLOP IN HIGH-PERFORMANCE SYSTEM-ON-A-CHIP (SoC)

2007 ◽  
Vol 16 (02) ◽  
pp. 169-179 ◽  
Author(s):  
INHWA JUNG ◽  
MOO-YOUNG KIM ◽  
CHULWOO KIM
Keyword(s):  
Power Consumption ◽  
High Performance ◽  
Clock Frequency ◽  
Flip Flop ◽  
Reduce Power Consumption ◽  
Look Ahead ◽  
Clock Distribution Network ◽  
Double Edge ◽  
Pipeline Design ◽  
Circuit Technique

In many VLSI chips, the power dissipation of the clocking system that includes clock distribution network and flip-flops is often the largest portion of total chip power consumption. In the near future, this portion is likely to dominate total chip power consumption due to higher clock frequency and deeper pipeline design trend. Traditionally, two approaches have been used: (1) to reduce power consumption in the clock tree, several low-swing clock flip-flops and double-edge flip-flops have been introduced; (2) to reduce power consumption in flip-flops, conditional capture, clock-on-demand, data-transition look-ahead techniques have been developed. Recently, pulsed latch type flip-flops are introduced in several high-performance microprocessors to reduce E × D. In this paper, these flip-flops are described with their pros and cons. Then, a new circuit technique is described along with simulation results. The proposed pulsed latch reduces E × D by 82.6% to 95.4% compared to conventional flip-flops.

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