Homoepitaxial Growth of 4H‐SiC on Vicinal Substrates

ABSTRACTHomoepitaxial growth, impurity doping, and diode fabrication on 4H-SiC(11–20) and (03–38) have been investigated. Although the efficiency of nitrogen incorporation is higher on the non-standard faces than on (0001), a low background doping concentration of 2∼3×1014 cm-3 can be achieved. On these faces, boron and aluminum are less effectively incorporated, compared to the growth on off-axis (0001). 4H-SiC(11–20) epilayers are micropipe-free, as expected. More interestingly, almost perfect micropipe closing has been realized in 4H-SiC (03–38) epitaxial growth. Ni/4H-SiC(11–20) and (03–38) Schottky barrier diodes showed promising characteritics of 3.36 kV-24 mΩcm2 and 3.28 kV–22 mΩcm2, respectively. The breakdown voltage of 4H-SiC(03–38) Schottky barrier diodes was significantly improved from 1 kV to above 2.5 kV by micropipe closing.

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Ion-Beam Assist Nano-Texturing of Films

MRS Proceedings ◽

10.1557/proc-1020-gg02-04 ◽

2007 ◽

Vol 1020 ◽

Author(s):

Vladimir Matias ◽

Chris Sheehan ◽

Alp T. Findikoglu

Keyword(s):

Experimental Design ◽

Single Crystal ◽

Ion Beam ◽

Fabrication Method ◽

Polycrystalline Metal ◽

Tape Transport ◽

Homoepitaxial Growth ◽

Ion Beam Assisted Deposition ◽

High Throughput Experimentation ◽

Out Of Plane

AbstractWe present an ion-beam based fabrication method for growth of single-crystal-like films that does not utilize epitaxy on single crystal substrates. We use ion-beam assisted texturing to obtain biaxial crystalline alignment in a film. This ion-beam assisted deposition (IBAD) texturing can be done on arbitrary, but smooth substrates, including flexible polycrystalline metal tapes. With IBAD texturing of MgO and subsequent homoepitaxial growth we have demonstrated an in-plane mosaic spread FWHM as low as 2° and out-of-plane alignment of 1°. The deposition system we use includes reel-to-reel tape transport for a linear transport of substrate materials through the deposition zones. This allows for high-throughput experimentation via a linear combinatorial experimental design.

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Defect Generation and Annihilation in 3C-SiC-(001) Homoepitaxial Growth by Sublimation

Materials Science Forum ◽

10.4028/www.scientific.net/msf.740-742.283 ◽

2013 ◽

Vol 740-742 ◽

pp. 283-286

Author(s):

Philip Hens ◽

Julian Müller ◽

Günter Wagner ◽

Rickard Liljedahl ◽

Erdmann Spiecker ◽

...

Keyword(s):

Chemical Vapor ◽

Structural Defects ◽

Silicon Substrates ◽

Growth Step ◽

Planar Defects ◽

Defect Generation ◽

Defect Clusters ◽

Homoepitaxial Growth ◽

Cubic Silicon Carbide ◽

Thick Layers

In this paper we present a concept on the defect generation and annihilation during the homoepitaxial growth step of cubic silicon carbide by sublimation epitaxy on templates grown by chemical vapor deposition on silicon substrates. Several structural defects like stacking faults, twins and star defects show opposite evolution from the template layer into the sublimation grown material. While single planar defects tend to annihilate with increasing layer thickness, the defect clusters assigned to the star defects are enlarging. These issues contribute to a balance of how to achieve the best possible quality on thick layers.

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