Gate Dielectrics for 4H‐SiC Power Switches: Understanding the Structure and Effects of Electrically Active Point Defects at the 4H‐SiC/SiO 2 Interface

2021 ◽  
pp. 225-247
Author(s):  
Gregor Pobegen ◽  
Thomas Aichinger
2021 ◽  
pp. 137-168
Author(s):  
Ulrike Grossner ◽  
Joachim K. Grillenberger ◽  
Judith Woerle ◽  
Marianne E. Bathen ◽  
Johanna Müting
Keyword(s):  

2009 ◽  
Vol 615-617 ◽  
pp. 393-396 ◽  
Author(s):  
Bernd Zippelius ◽  
Michael Krieger ◽  
Heiko B. Weber ◽  
Gerhard Pensl ◽  
Birgit Kallinger ◽  
...  

4H-SiC epilayers are homoepitaxially grown on 4H-SiC substrates with different C/Si-ratios and different growth rates by the chemical vapour deposition method. DLTS investigations are applied in order to trace energetically deep states of electrically active point defects and extended defects, which may act as the source for the degradation of electronic devices. In addition, the dependence of the DLTS signal heights on the filling pulse length is studied.


2001 ◽  
Author(s):  
A. CRICENTI ◽  
R. GENEROSI ◽  
M. LUCE ◽  
V. MAROCCHI ◽  
S. BIGOTTA ◽  
...  

1999 ◽  
Vol 273-274 ◽  
pp. 101-104 ◽  
Author(s):  
V.V Emtsev ◽  
V.Yu Davydov ◽  
V.V Kozlovskii ◽  
D.S Poloskin ◽  
A.N Smirnov ◽  
...  
Keyword(s):  

Nanophotonics ◽  
2019 ◽  
Vol 8 (11) ◽  
pp. 1867-1888 ◽  
Author(s):  
Lee C. Bassett ◽  
Audrius Alkauskas ◽  
Annemarie L. Exarhos ◽  
Kai-Mei C. Fu

AbstractOptically active point defects in wide-bandgap crystals are leading building blocks for quantum information technologies including quantum processors, repeaters, simulators, and sensors. Although defects and impurities are ubiquitous in all materials, select defect configurations in certain materials harbor coherent electronic and nuclear quantum states that can be optically and electronically addressed in solid-state devices, in some cases even at room temperature. Historically, the study of quantum point defects has been limited to a relatively small set of host materials and defect systems. In this article, we consider the potential for identifying defects in new materials, either to advance known applications in quantum science or to enable entirely new capabilities. We propose that, in principle, it should be possible to reverse the historical approach, which is partially based on accidental discovery, in order to design quantum defects with desired properties suitable for specific applications. We discuss the biggest obstacles on the road towards this goal, in particular those related to theoretical prediction, materials growth and processing, and experimental characterization.


2006 ◽  
Vol 16 (01) ◽  
pp. 389-396
Author(s):  
Masashi Nakatomi ◽  
Koichi Yamashita

We present a theoretical study on the point defects in ZrO 2–silicon interfaces using molecular dynamics (MD) calculations. A super-cell model that contains 9 atomic layers of silicon and 9 atomic layers of ZrO 2 was used for the simulation. Three atomic layers containing 17 oxygen atoms, eight silicon atoms, and nine Zr atoms were used to simulate the ZrO 2–silicon interface. We then performed density functional theory (DFT) with plane-wave basis to calculate the interface band structure. Results demonstrate that the stretched Zr – O bonds at the interface would produce some defect levels in the band gap. Particularly, the defect levels originated from the interstitial oxygen atoms are located close to the bottom of the ZrO 2 conduction band and hence it will affect the electrical properties of the gate dielectrics.


1999 ◽  
Vol 593 ◽  
Author(s):  
Yu.V. Pleskov ◽  
M.D. Krotova ◽  
V.I. Polyakov ◽  
A.V. Khomich ◽  
A.I. Rukovishnikov ◽  
...  

ABSTRACTElectrochemical impedance in H2SO4 solutions and kinetics of redox reactions in the Fe(CN)63-/4- system were studied on amorphous nitrogenated diamond-like carbon (a-C:N:H) thin-film electrodes. Parameters of point defects (trapping centers) were also measured by the Deep Level Transient Spectroscopy techniques. The films have been fabricated on p- and i-type silicon and quartz substrates, using direct ion beam deposition from an RF inductively coupled N2+ CH4 plasma source. The increase in N2/CH4 ratio in the gas mixture lead to a decrease in the electrical resistivity and optical bandgap of the films from 3×1010to 5×106 Ω cm and from 1.3 to 0.6 eV, respectively. Simultaneously, the concentration of electrically active point defects increased significantly and the charge transfer at the a-C:N:H film/redox electrolyte interface was facilitated


2010 ◽  
Vol 207 (9) ◽  
pp. 2049-2053 ◽  
Author(s):  
J. P. Goss ◽  
P. R. Briddon ◽  
H. Pinto ◽  
R. Jones

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