Electrical and Electrochemical Properties of a-C:N:H Films

1999 ◽  
Vol 593 ◽  
Author(s):  
Yu.V. Pleskov ◽  
M.D. Krotova ◽  
V.I. Polyakov ◽  
A.V. Khomich ◽  
A.I. Rukovishnikov ◽  
...  
Keyword(s):  
Point Defects ◽  
Electrochemical Impedance ◽  
Deep Level ◽  
Ion Beam ◽  
Plasma Source ◽  
Inductively Coupled ◽  
Active Point ◽  
Transient Spectroscopy ◽  
Quartz Substrates ◽  
Kinetics Of

ABSTRACTElectrochemical impedance in H2SO4 solutions and kinetics of redox reactions in the Fe(CN)63-/4- system were studied on amorphous nitrogenated diamond-like carbon (a-C:N:H) thin-film electrodes. Parameters of point defects (trapping centers) were also measured by the Deep Level Transient Spectroscopy techniques. The films have been fabricated on p- and i-type silicon and quartz substrates, using direct ion beam deposition from an RF inductively coupled N2+ CH4 plasma source. The increase in N2/CH4 ratio in the gas mixture lead to a decrease in the electrical resistivity and optical bandgap of the films from 3×1010to 5×106 Ω cm and from 1.3 to 0.6 eV, respectively. Simultaneously, the concentration of electrically active point defects increased significantly and the charge transfer at the a-C:N:H film/redox electrolyte interface was facilitated

Point Defects Migration and Agglomeration in Si at Room Temperature: The Role of Surface and Impurity Content

1997 ◽  
Vol 469 ◽  
Author(s):  
V. Privitera ◽  
S. Coffa ◽  
K. Kyllesbech Larsen ◽  
S. Libertino ◽  
G. Mannino ◽  
...  
Keyword(s):  
Point Defects ◽  
Room Temperature ◽  
Deep Level ◽  
Ion Beam ◽  
Impurity Content ◽  
Sample Surface ◽  
Defect Migration ◽  
Transient Spectroscopy ◽  
Dopant Atoms

ABSTRACTOur recent work on the room temperature migration and trapping phenomena of self-interstitials and vacancies in crystalline Si is reviewed. Spreading resistance profiling and deep level transient spectroscopy measurements were used to monitor the interaction of ion beam generated defects with dopant atoms, intrinsic impurities (i.e. O and C), pre-existing defect marker layers and sample surface. We have found that both interstitials and vacancies undergo fast long range migration which is interrupted by trapping at impurities and by recombination at defects or at the surface. Effective defect migration lengths as large as 5 μm at room temperature have been observed in highly pure, defect free epitaxial Si samples. A lower limit of 1×10−10 cm2/sec for the room temperature diffusivity of self-interstitials has been determined. Furthermore, by monitoring the migration and interaction processes of point defects injected through a mask, we have established that surface acts as an effective sink for the migrating Si self interstitials.

Persistent Photoconductivity And Thermal Recovery Kinetics Of Low Energy Ar + Bombarded GaAs

1991 ◽  
Vol 223 ◽  
Author(s):  
A. Vaseashta ◽  
L. C. Burton
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Thermal Recovery ◽  
Low Energy ◽  
Persistent Photoconductivity ◽  
Transport Parameters ◽  
Excellent Correlation ◽  
Proposed Model ◽  
Transient Spectroscopy ◽  
Kinetics Of

ABSTRACTKinetics of persistent photoconductivity, photoquenching, and thermal and optical recovery observed in low energy Ar+ bombarded on (100) GaAs surfaces have been investigated. Rate and transport equations for these processes were derived and simulated employing transport parameters, trap locations and densities determined by deep level transient spectroscopy. Excellent correlation was obtained between the results of preliminary simulation and the experimentally observed values. The exponential decay of persistent photoconductivity response curve was determined to be due to metastable electron traps with longer lifetime and is consistent with an earlier proposed model.

Evolution of Charged Gap Statesin a- Si:H Under Light Exposure

2003 ◽  
Vol 762 ◽  
Author(s):  
M. Zeman ◽  
V. Nádaždy ◽  
R.A.C.M.M. van Swaaij ◽  
R. Durný ◽  
J.W. Metselaar
Keyword(s):  
Deep Level ◽  
Light Exposure ◽  
Dark Conductivity ◽  
Initial Energy ◽  
Energy Distributions ◽  
Transient Spectroscopy ◽  
Induced Changes ◽  
Hydrogenated Amorphous ◽  
Kinetics Of ◽  
Positively Charged

AbstractThe charge deep-level transient spectroscopy (Q-DLTS) experiments on undoped hydrogenated amorphous silicon (a-Si:H) demonstrate that during light soaking the states in the upper part of the gap disappear, while additional states around and below midgap are created. Since no direct correlation is observed in light-induced changes of the three groups of states that we identify from the Q-DLTS signal, we believe that we deal with three different types of defects. Positively charged states above midgap are related to a complex formed by a hydrogen molecule and a dangling bond. Negatively charged states below midgap are attributed to floating bonds. Various trends in the evolution of dark conductivity due to light soaking indicate that the kinetics of light-induced changes of the three gap-state components depend on their initial energy distributions and on the spectrum and intensity of light during exposure.

Maskless Formation of Tungsten Films by Ion Beam Assisted Deposition Technique

1989 ◽  
Vol 158 ◽  
Author(s):  
Zheng Xu ◽  
Toshihiko Kosugi ◽  
Kenji Gamo ◽  
Susumu Namba
Keyword(s):  
Deep Level ◽  
Ion Beam ◽  
Low Energy ◽  
Deposition Technique ◽  
Film Properties ◽  
Ion Beam Assisted Deposition ◽  
Current Voltage ◽  
Residual Damage ◽  
Current Voltage Characteristics ◽  
Transient Spectroscopy

ABSTRACTW films were deposited on n-GaAs by ion beam assisted deposition technique using low energy H2+ and Ar+, and film properties and residual damage in the substrate were investigated by measuring X-ray photoemission, current-voltage characteristics and deep level transient spectroscopy. Films with a resistivity of 1O−5 ohm·cm were formed. It was observed that damage can be reduced using the low energy beams and that Schottky contacts with n-factor of almost 1 and barrier height of 0.88 eV were formed.

A Beem Study of PtSi Schottky Contacts on Ion-Milled Si

1999 ◽  
Vol 564 ◽  
Author(s):  
Guo-Ping Ru ◽  
C. Detavernier ◽  
R. A. Donaton ◽  
A. Blondeel ◽  
P. Clauws ◽  
...  
Keyword(s):  
Deep Level ◽  
Ion Beam ◽  
Milling Process ◽  
Schottky Contacts ◽  
Ion Beam Sputtering ◽  
Ion Milling ◽  
Si Substrates ◽  
Ballistic Electron ◽  
Beam Sputtering ◽  
Transient Spectroscopy

AbstractBallistic electron emission microscopy (BEEM) and deep level transient spectroscopy (DLTS) have been used to study the effects of substrate damage introduced by an ion-milling process in PtSi/n-Si Schottky contacts. Argon ions with well-defined energies of 300, 500, 700, 1000, 1500 eV were used to sputter n-type Si substrates in an ion beam sputtering system before metal deposition and silicide formation. Histograms of the PtSi/n-Si Schottky barrier height (SBH) measured by BEEM show that the mean SBH decreases with increasing ion energy, which can be explained as a result of donor-like defects that are introduced by the ion milling treatment. From DLTS measurements, we found direct evidence for the presence of such defects.

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