Universal Polarization Switching Behavior of Disordered Ferroelectrics

2012 ◽  
Vol 22 (10) ◽  
pp. 2058-2066 ◽  
Author(s):  
Yuri A. Genenko ◽  
Sergey Zhukov ◽  
Sergey V. Yampolskii ◽  
Jörg Schütrumpf ◽  
Robert Dittmer ◽  
...  
Keyword(s):  
Polarization Switching ◽  
Switching Behavior

Polarization switching behavior of Hf–Zr–O ferroelectric ultrathin films studied through coercive field characteristics

2018 ◽  
Vol 57 (4S) ◽  
pp. 04FB01 ◽  
Author(s):  
Shinji Migita ◽  
Hiroyuki Ota ◽  
Hiroyuki Yamada ◽  
Keisuke Shibuya ◽  
Akihito Sawa ◽  
...  
Keyword(s):  
Ultrathin Films ◽  
Coercive Field ◽  
Polarization Switching ◽  
Switching Behavior

Frequency dependence on polarization switching measurement in ferroelectric capacitors

2022 ◽  
Vol 43 (1) ◽  
pp. 014102
Author(s):  
Zhaomeng Gao ◽  
Shuxian Lyu ◽  
Hangbing Lyu
Keyword(s):  
Leakage Current ◽  
Time Lag ◽  
Hysteresis Loops ◽  
Polarization Switching ◽  
Wide Frequency Range ◽  
Switching Behavior ◽  
Current Response ◽  
Driving Frequency ◽  
Polarization Current ◽  
Rc Delay

Abstract Ferroelectric hysteresis loop measurement under high driving frequency generally faces great challenges. Parasitic factors in testing circuits such as leakage current and RC delay could result in abnormal hysteresis loops with erroneous remnant polarization (P r) and coercive field (E c). In this study, positive-up-negative-down (PUND) measurement under a wide frequency range was performed on a 10-nm thick Hf0.5Zr0.5O2 ferroelectric film. Detailed analysis on the leakage current and RC delay was conducted as the polarization switching occurs in the FE capacitor. After considering the time lag caused by RC delay, reasonable calibration of current response over the voltage pulse stimulus was employed in the integral of polarization current over time. In such a method, rational P–V loops measured at high frequencies (>1 MHz) was successfully achieved. This work provides a comprehensive understanding on the effect of parasitic factors on the polarization switching behavior of FE films.

Polarization switching behavior of one-axis-oriented lead zirconate titanate films fabricated on metal oxide nanosheet layer

2017 ◽  
Vol 56 (10S) ◽  
pp. 10PF10
Author(s):  
Hiroshi Uchida ◽  
Daichi Ichinose ◽  
Takahisa Shiraishi ◽  
Hiromi Shima ◽  
Takanori Kiguchi ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Lead Zirconate Titanate ◽  
Polarization Switching ◽  
Lead Zirconate ◽  
Switching Behavior ◽  
Zirconate Titanate

Characterization of Polarization Switching Behavior of Pt/SrBi2Ta2O9/Pt Ferroelectric Capacitors in Ferroelectric Random Access Memory

2002 ◽  
Vol 41 (Part 1, No. 2A) ◽  
pp. 694-697 ◽  
Author(s):  
Young Min Kang ◽  
Choong Heui Chung ◽  
Sang Hyun Oh ◽  
Beelyong Yang ◽  
Seaung Suk Lee ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Polarization Switching ◽  
Switching Behavior ◽  
Access Memory ◽  
Ferroelectric Random Access Memory ◽  
Ferroelectric Capacitors

Polarization Switching Behavior of Ferroelectric (NH4)0.39K0.61NO3 Films

2010 ◽  
Vol 93-94 ◽  
pp. 49-58 ◽  
Author(s):  
Navneet Dabra ◽  
Jasbir S. Hundal
Keyword(s):  
Applied Field ◽  
Switching Time ◽  
Polarization Switching ◽  
Nucleation Theory ◽  
Switching Behavior ◽  
Root Mean Square Roughness ◽  
Mean Square ◽  
Force Microscopy ◽  
Atomic Force ◽  
Maximum Polarization

The polarization switching transients of spray-deposited ferroelectric (NH4)0.39K0.61NO3 (NKN) films have been investigated. Modified Sawyer-Tower circuit has been used to trace the hysteresis loop (P-E). The value of maximum polarization, Ps and coercive field, Ec was found to be 6.58 µC/cm2 and 4.10 kV/cm respectively. The polarization fatigue study has been carried out. The experimental polarization switching transients were fitted well with the Kolmogorov-Avrami-Ishibashi (KAI) nucleation theory The maximum polarization switching current (imax) and maximum switching time (tmax) have been measured as a function of the applied field. The activation field (), dimensionality (n) and switching time have been determined by employing the KAI model to the experimental switching transients. The atomic force microscopy (AFM) has been employed to estimate the grain size (~ 72 nm) and root mean square roughness (rms) (~ 130nm) of the (NH4)0.39K0.61NO3 films and has been correlated with the switching properties.

Dielectric Behavior of YMnO3 Epitaxial Thin Film at around Magnetic Phase Transition Temperature

2010 ◽  
Vol 67 ◽  
pp. 176-181
Author(s):  
Kazuhiro Maeda ◽  
Takeshi Yoshimura ◽  
Atsushi Ashida ◽  
Norifumi Fujimura
Keyword(s):  
Thin Film ◽  
Dielectric Permittivity ◽  
Electric Field ◽  
Magnetic Ordering ◽  
Polarization Switching ◽  
Dielectric Behavior ◽  
Switching Behavior ◽  
Ferroelectric Polarization ◽  
Nucleation Density ◽  
Epitaxial Thin Film

Relationship between magnetic ordering and ferroelectric polarization switching in YMnO3 epitaxial thin film was investigated. It was found that Néel point of the YMnO3 film is below 80 K, which is consistent with that of YMnO3 single crystal by neutron diffraction. From temperature dependence of the polarization-electric field hysteresis loops and the dielectric permittivity-voltage characteristics, ferroelectric polarization switching behavior was investigated from 300 to 10 K in detail. The ferroelectric polarization switching behavior accords with Ishibashi-Orihara’s theory. Moreover, it was found that the dielectric permittivity under bias electric field have a anomaly below 80 K and the nucleation density for the ferroelectric polarization switching decreases below 130 K, which is higher than 80K.

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