Synthesis of Large-Area Graphene Layers on Poly-Nickel Substrate by Chemical Vapor Deposition: Wrinkle Formation

ABSTRACTIn this work, we report the synthesis and characterization of three dimensional heterostructures graphene nanostructures (HGN) comprising continuous large area graphene layers and ZnO nanostructures, fabricated via chemical vapor deposition. Characterization of large area HGN demonstrates that it consists of 1-5 layers of graphene, and exhibits high optical transmittance and enhanced electrical conductivity. Electron microscopy investigation of the three dimensional heterostructures shows that the morphology of ZnO nanostructures is highly dependent on the growth temperature. It is observed that ordered crystalline ZnO nanostructures are preferably grown along the <0001> direction. Ultraviolet spectroscopy indicates that the CVD grown HGN layers has excellent optical properties. A combination of electrical and optical properties of graphene and ZnO building blocks in ZnO based HGN provides unique characteristics for opportunities in future optoelectronic devices.

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Synthesis of large-area graphene layers on nickel film by chemical vapor deposition: wrinkle formation

10.1117/12.828039 ◽

2009 ◽

Cited By ~ 2

Author(s):

Seung Jin Chae ◽

Fethullah Günes ◽

Ki Kang Kim ◽

Eun Sung Kim ◽

Gang Hee Han ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Chemical Vapor ◽

Nickel Film ◽

Large Area ◽

Graphene Layers

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Low-Temperature Chemical Vapor Deposition Growth of Graphene Layers on Copper Substrate Using Camphor Precursor

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2020.18862 ◽

2020 ◽

Vol 20 (12) ◽

pp. 7698-7704

Author(s):

K. Kavitha ◽

Akanksha R. Urade ◽

Gurjinder Kaur ◽

Indranil Lahiri

Keyword(s):

Chemical Vapor Deposition ◽

Low Temperature ◽

Vapor Deposition ◽

Graphene Layer ◽

Copper Substrate ◽

Chemical Vapor ◽

Large Area ◽

Chemical Vapor Deposition Growth ◽

Graphene Layers ◽

Grown Graphene

A two-step, low-temperature thermal chemical vapor deposition (CVD) process, which uses camphor for synthesizing continuous graphene layer on Cu substrate is reported. The growth process was performed at lower temperature (800 °C) using camphor as the source of carbon. A threezone CVD system was used for controlled heating of precursor, in order to obtain uniform graphene layer. As-grown samples were characterized by X-ray diffraction (XRD), Raman spectroscopy and transmission electron microscopy (TEM). The results show the presence of 4–5 layers of graphene. As-grown graphene transferred onto a glass substrate through a polymer-free wet-etching process, demonstrated transmittance ~91% in visible spectra. This process of synthesizing large area, 4–5 layer graphene at reduced temperature represents an energy-efficient method of producing graphene for possible applications in opto-electronic industry.

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Graphene Formation on SiC Substrates

Materials Science Forum ◽

10.4028/www.scientific.net/msf.615-617.211 ◽

2009 ◽

Vol 615-617 ◽

pp. 211-214 ◽

Cited By ~ 21

Author(s):

Brenda L. VanMil ◽

Rachael L. Myers-Ward ◽

Joseph L. Tedesco ◽

Charles R. Eddy ◽

Glenn G. Jernigan ◽

...

Keyword(s):

Raman Spectroscopy ◽

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Small Area ◽

High Vacuum ◽

Chemical Vapor ◽

Large Area ◽

Graphene Layers ◽

Surface Steps ◽

Hall Effect Measurements

Graphene layers were created on both C and Si faces of semi-insulating, on-axis, 4H- and 6H-SiC substrates. The process was performed under high vacuum (<10-4 mbar) in a commercial chemical vapor deposition SiC reactor. A method for H2 etching the on-axis substrates was developed to produce surface steps with heights of 0.5 nm on the Si-face and 1.0 to 1.5 nm on the C-face for each polytype. A process was developed to form graphene on the substrates immediately after H2 etching and Raman spectroscopy of these samples confirmed the formation of graphene. The morphology of the graphene is described. For both faces, the underlying substrate morphology was significantly modified during graphene formation; surface steps were up to 15 nm high and the uni-form step morphology was sometimes lost. Mobilities and sheet carrier concentrations derived from Hall Effect measurements on large area (16 mm square) and small area (2 and 10 m square) samples are presented and shown to compare favorably to recent reports.

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Chemical vapor deposition of bilayer graphene with layer-resolved growth through dynamic pressure control

Journal of Materials Chemistry C ◽

10.1039/c6tc02339h ◽

2016 ◽

Vol 4 (31) ◽

pp. 7464-7471 ◽

Cited By ~ 15

Author(s):

Birong Luo ◽

Bingyan Chen ◽

Anle Wang ◽

Dechao Geng ◽

Jie Xu ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Dynamic Pressure ◽

Chemical Vapor ◽

Pressure Control ◽

Bilayer Graphene ◽

Large Area ◽

Graphene Layers ◽

Pressure Chemical

Large-area AB stacked bilayer graphene layers with layer-resolved growth were successfully fabricated through dynamic pressure chemical vapor deposition.

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Thermodynamics Controlled Sharp Transformation from InP to GaP Nanowires via Introducing Trace Amount of Gallium

Nanoscale Research Letters ◽

10.1186/s11671-021-03505-2 ◽

2021 ◽

Vol 16 (1) ◽

Author(s):

Zhenzhen Tian ◽

Xiaoming Yuan ◽

Ziran Zhang ◽

Wuao Jia ◽

Jian Zhou ◽

...

Keyword(s):

Chemical Vapor Deposition ◽

Vapor Deposition ◽

Driving Force ◽

Chemical Vapor ◽

Chemical Vapor Deposition Method ◽

Nanowire Growth ◽

Calphad Approach ◽

Deposition Method ◽

Large Area ◽

Growth Phenomenon

AbstractGrowth of high-quality III–V nanowires at a low cost for optoelectronic and electronic applications is a long-term pursuit of research. Still, controlled synthesis of III–V nanowires using chemical vapor deposition method is challenge and lack theory guidance. Here, we show the growth of InP and GaP nanowires in a large area with a high density using a vacuum chemical vapor deposition method. It is revealed that high growth temperature is required to avoid oxide formation and increase the crystal purity of InP nanowires. Introduction of a small amount of Ga into the reactor leads to the formation of GaP nanowires instead of ternary InGaP nanowires. Thermodynamic calculation within the calculation of phase diagrams (CALPHAD) approach is applied to explain this novel growth phenomenon. Composition and driving force calculations of the solidification process demonstrate that only 1 at.% of Ga in the catalyst is enough to tune the nanowire formation from InP to GaP, since GaP nucleation shows a much larger driving force. The combined thermodynamic studies together with III–V nanowire growth studies provide an excellent example to guide the nanowire growth.

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