Large-Area van der Waals Epitaxial Growth of Vertical III-Nitride Nanodevice Structures on Layered Boron Nitride

2019 ◽  
Vol 6 (16) ◽  
pp. 1900207 ◽  
Author(s):  
Suresh Sundaram ◽  
Xin Li ◽  
Yacine Halfaya ◽  
Taha Ayari ◽  
Gilles Patriarche ◽  
...  
RSC Advances ◽  
2017 ◽  
Vol 7 (39) ◽  
pp. 24188-24194 ◽  
Author(s):  
Jing-Kai Qin ◽  
Wen-Zhu Shao ◽  
Yang Li ◽  
Cheng-Yan Xu ◽  
Dan-Dan Ren ◽  
...  

Epitaxial growth of large area continuous ReS2 films on mica.


Author(s):  
Xiaoqiu Guo ◽  
Ruixin Yu ◽  
Jingwen Jiang ◽  
Zhuang Ma ◽  
Xiuwen Zhang

Topological insulation is widely predicted in two-dimensional (2D) materials realized by epitaxial growth or van der Waals (vdW) exfoliation. Such 2D topological insulators (TI’s) host many interesting physical properties such...


Author(s):  
Zenghui Wu ◽  
Guoan Tai ◽  
Runsheng Liu ◽  
Chuang Hou ◽  
Wei Shao ◽  
...  

2018 ◽  
Vol 47 (16) ◽  
pp. 6342-6369 ◽  
Author(s):  
Ki Kang Kim ◽  
Hyun Seok Lee ◽  
Young Hee Lee

The construction of large surface area hexagonal boron nitride for van der Waals heterostructures and 2D-layered electronics is reviewed.


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