All‐Solid‐State Oxygen Ion Electrochemical Random‐Access Memory for Neuromorphic Computing

2021 ◽  
pp. 2100142
Author(s):  
Revannath Dnyandeo Nikam ◽  
Myonghoon Kwak ◽  
Hyunsang Hwang
Keyword(s):  
Solid State ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory ◽  
Neuromorphic Computing ◽  
Oxygen Ion

Organic small molecule-based RRAM for data storage and neuromorphic computing

2020 ◽  
Vol 8 (37) ◽  
pp. 12714-12738 ◽  
Author(s):  
Boyuan Mu ◽  
Hsiao-Hsuan Hsu ◽  
Chi-Ching Kuo ◽  
Su-Ting Han ◽  
Ye Zhou
Keyword(s):  
Small Molecules ◽  
Data Storage ◽  
Small Molecule ◽  
State Of The Art ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Memory Devices ◽  
Access Memory ◽  
Neuromorphic Computing

Recent state-of-the-art developments related to organic small molecules for resistive random-access memory devices has been emphasized.

Solid-State Electrochemical Random Access Memory for in-Memory Computing

2021 ◽  
Vol MA2021-02 (12) ◽  
pp. 614-614
Author(s):  
Yiyang Li ◽  
Elliot Fuller ◽  
Alec Alec Talin
Keyword(s):  
Solid State ◽  
Random Access ◽  
Random Access Memory ◽  
Access Memory

Improving Performance by Inserting an Indium Oxide Layer as an Oxygen Ion Storage Layer in HfO₂-Based Resistive Random Access Memory

2021 ◽  
Vol 68 (3) ◽  
pp. 1037-1040
Author(s):  
Shih-Kai Lin ◽  
Cheng-Hsien Wu ◽  
Ting-Chang Chang ◽  
Chen-Hsin Lien ◽  
Chih-Cheng Yang ◽  
...  
Keyword(s):  
Oxide Layer ◽  
Indium Oxide ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Access Memory ◽  
Oxygen Ion ◽  
Ion Storage
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