Deciphering the Role of Defects in the Ambipolar Electrical Transport in Nanocrystalline Sb 2 Se 3 Thin Films

2021 ◽  
pp. 2100985
Author(s):  
Juan Carlos González ◽  
Henrique Limborço ◽  
Rodrigo Ribeiro‐Andrade ◽  
Bruno Cordeiro Silva ◽  
Klaus Krambrock
Keyword(s):  
Thin Films ◽  
Electrical Transport

Role of osmium in the electrical transport mechanism of polycrystalline tin oxide thin films

2004 ◽  
Vol 84 (5) ◽  
pp. 744-746 ◽  
Author(s):  
A. Forleo ◽  
S. Capone ◽  
M. Epifani ◽  
P. Siciliano ◽  
R. Rella
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Electrical Transport ◽  
Transport Mechanism ◽  
Oxide Thin Films

Electrical and Structural Properties of Carbon-Nitrogen Films

1999 ◽  
Vol 593 ◽  
Author(s):  
R. Kurt ◽  
R. Sanjinesa ◽  
A. Karimi
Keyword(s):  
Thin Films ◽  
Electrical Transport ◽  
Room Temperature ◽  
Pressure Ratio ◽  
Semiconducting Properties ◽  
Maximum Cluster ◽  
Reactive N ◽  
Measured Resistivity ◽  
Deposited Films

ABSTRACTTo investigate the role of nitrogen in the structure formation and electrical properties of CNx thin films, several carbon thin films containing variable concentrations of nitrogen were deposited using a magnetron sputtering in a reactive N2/ Ar discharge. The chemical composition of the as-deposited films was investigated by means of Rutherford backscattering (RBS) and a [N]/[C] ratio up to 0.5 was obtained. TEM studies confirmed that the deposits are mainly amorphous and contain nanocrystalline CNx compounds. Additional STM investigations reveal a cluster-like microstructure of the surface showing a maximum cluster size of 10 nm in thin films deposited at a N2 / Ar pressure ratio of 30% in the plasma. The electrical resistivity ρ was studied as a function of temperature between 10 K and 320 K. All deposited films show semiconducting behaviour. The lowest ρ values were observed in films containing no nitrogen, whereas the films deposited with 30% N2in the sputter plasma reveal strongest semiconducting properties. The temperature dependence of the measured resistivity will be discussed according to Mott's law and the activation energy for the electrical transport estimated at room temperature will be given.

Role of low O2 pressure and growth temperature on electrical transport of PLD grown ZnO thin films on Si substrates

2006 ◽  
Vol 50 (6) ◽  
pp. 1119-1123 ◽  
Author(s):  
Ch. Pandis ◽  
N. Brilis ◽  
D. Tsamakis ◽  
H.A. Ali ◽  
S. Krishnamoorthy ◽  
...  
Keyword(s):  
Thin Films ◽  
Growth Temperature ◽  
Electrical Transport ◽  
Zno Thin Films ◽  
Si Substrates

The study of interfacial reactions of nickel thin films on GaAs

1983 ◽  
Vol 41 ◽  
pp. 156-157
Author(s):  
L.J. Chen ◽  
Y.F. Hsieh
Keyword(s):  
Thin Films ◽  
Integrated Circuits ◽  
Interfacial Reactions ◽  
Metal Contacts ◽  
Nickel Thin Films ◽  
Thin Foils ◽  
The Status ◽  
Si Doped ◽  
Electron Microscopes

One measure of the maturity of a device technology is the ease and reliability of applying contact metallurgy. Compared to metal contact of silicon, the status of GaAs metallization is still at its primitive stage. With the advent of GaAs MESFET and integrated circuits, very stringent requirements were placed on their metal contacts. During the past few years, extensive researches have been conducted in the area of Au-Ge-Ni in order to lower contact resistances and improve uniformity. In this paper, we report the results of TEM study of interfacial reactions between Ni and GaAs as part of the attempt to understand the role of nickel in Au-Ge-Ni contact of GaAs.N-type, Si-doped, (001) oriented GaAs wafers, 15 mil in thickness, were grown by gradient-freeze method. Nickel thin films, 300Å in thickness, were e-gun deposited on GaAs wafers. The samples were then annealed in dry N2 in a 3-zone diffusion furnace at temperatures 200°C - 600°C for 5-180 minutes. Thin foils for TEM examinations were prepared by chemical polishing from the GaA.s side. TEM investigations were performed with JE0L- 100B and JE0L-200CX electron microscopes.

Transmission Electron Microscopy studies of texture of Cr underlayer of magnetic recording hard disk

1991 ◽  
Vol 49 ◽  
pp. 580-581
Author(s):  
L. Tang ◽  
G. Thomas ◽  
M. R. Khan ◽  
S. L. Duan
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Magnetic Recording ◽  
Magnetic Thin Films ◽  
Magnetic Films ◽  
Substrate Bias ◽  
Epitaxial Relationship ◽  
Transmission Electron

Cr thin films are often used as underlayers for Co alloy magnetic thin films, such as Co1, CoNi2, and CoNiCr3, for high density longitudinal magnetic recording. It is belived that the role of the Cr underlayer is to control the growth and texture of the Co alloy magnetic thin films, and, then, to increase the in plane coercivity of the films. Although many epitaxial relationship between the Cr underlayer and the magnetic films, such as ﹛1010﹜Co/ {110﹜Cr4, ﹛2110﹜Co/ ﹛001﹜Cr5, ﹛0002﹜Co/﹛110﹜Cr6, have been suggested and appear to be related to the Cr thickness, the texture of the Cr underlayer itself is still not understood very well. In this study, the texture of a 2000 Å thick Cr underlayer on Nip/Al substrate for thin films of (Co75Ni25)1-xTix dc-sputtered with - 200 V substrate bias is investigated by electron microscopy.

Transmission Electron Microscopy of Evaporated Perylene Thin Films

1990 ◽  
Vol 48 (2) ◽  
pp. 336-337
Author(s):  
C. Ewins ◽  
J.R. Fryer
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Molecular Electronics ◽  
High Vacuum ◽  
Amorphous Layer ◽  
Electric Heater ◽  
Transmission Electron ◽  
Polycyclic Aromatic

The preparation of thin films of organic molecules is currently receiving much attention because of the need to produce good quality thin films for molecular electronics. We have produced thin films of the polycyclic aromatic, perylene C10H12 by evaporation under high vacuum onto a potassium chloride (KCl) substrate. The role of substrate temperature in determining the morphology and crystallography of the films was then investigated by transmission electron microscopy (TEM).The substrate studied was the (001) face of a freshly cleaved crystal of KCl. The temperature of the KCl was controlled by an electric heater or a cold finger. The KCl was heated to 200°C under a vacuum of 10-6 torr and allowed to cool to the desired temperature. The perylene was then evaporated over a period of one minute from a molybdenum boat at a distance of 10cm from the KCl. The perylene thin film was then backed with an amorphous layer of carbon and floated onto copper microscope grids.

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