Nano-Analytical and Electrical Characterization of 4H-SiC MOSFETs
2012 ◽
Vol 711
◽
pp. 134-138
◽
Keyword(s):
P Type
◽
4H-SiC presents great advantages for its use in power electronic devices working at particular conditions. However the development of MOSFETs based on this material is limited by mobility degradation. N-channel SiC MOSFETs were manufactured on p-type epitaxial and p-implanted substrates and the electron mobility in the inversion channels was measured to be correlated with their structural and chemical properties determined by transmission electron microscopy methods. With regard to what was previously discussed in the literature, transition layer formation and carbon distribution across the SiC-SiO2interface are considered in relation with the measured low electron mobility of the MOSFETS.
2012 ◽
Vol 717-720
◽
pp. 437-440
◽
2011 ◽
Vol 55-57
◽
pp. 1506-1510
◽
2007 ◽
Vol 21
(02n03)
◽
pp. 123-128
◽
2018 ◽
Vol 21
(2)
◽
pp. 127-131
1989 ◽
Vol 47
◽
pp. 674-675
2001 ◽