Nano-Analytical and Electrical Characterization of 4H-SiC MOSFETs

2012 ◽  
Vol 711 ◽  
pp. 134-138 ◽  
Author(s):  
Ana Maria Beltran ◽  
Sylvie Schamm-Chardon ◽  
Vincent Mortet ◽  
Mathieu Lefebvre ◽  
Elena Bedel-Pereira ◽  
...  

4H-SiC presents great advantages for its use in power electronic devices working at particular conditions. However the development of MOSFETs based on this material is limited by mobility degradation. N-channel SiC MOSFETs were manufactured on p-type epitaxial and p-implanted substrates and the electron mobility in the inversion channels was measured to be correlated with their structural and chemical properties determined by transmission electron microscopy methods. With regard to what was previously discussed in the literature, transition layer formation and carbon distribution across the SiC-SiO2interface are considered in relation with the measured low electron mobility of the MOSFETS.

2012 ◽  
Vol 717-720 ◽  
pp. 437-440 ◽  
Author(s):  
Christian Strenger ◽  
Volker Haeublein ◽  
Tobias Erlbacher ◽  
Anton J. Bauer ◽  
Heiner Ryssel ◽  
...  

N-channel MOSFETs were manufactured on p-type and on p-implanted, n-type 4H-SiC substrates. The electron mobility in the inversion channel was measured to be correlated with the structural and chemical properties determined by transmission electron microscopy. With regard to what was previously discussed in the literature, interfacial layer formation and carbon distribution across the SiC/SiO2 interface were considered in relation with the measured Hall electron mobility.


2011 ◽  
Vol 55-57 ◽  
pp. 1506-1510 ◽  
Author(s):  
Jing Wei ◽  
Xin Tan ◽  
Tao Yu ◽  
Lin Zhao

A series of Y/TiO2nanoparticles (NPs) were synthesized via sol-gel method. The crystal structures, morphologies and chemical properties were characterized using X-ray diffraction (XRD), high resolution transmission electron microscopy (HR-TEM) and X-ray photoelectron spectroscopy (XPS). We investigated the effects of different doping amounts of Y on the reaction of CO2photoreduction. The results shown that 0.1 wt.%Y/TiO2(0.1YT) performed the highest photocatalytic activity, which yielded 384.62 µmol/g∙cat. formaldehyde after 6 h of UV illumination.


2020 ◽  
Vol 302 ◽  
pp. 107-113
Author(s):  
Bralee Chayasombat ◽  
Pitchaya Muensri ◽  
Yoothapong Klinthongchai ◽  
Kroekchai Inpor ◽  
Onuma Santawitee ◽  
...  

Mesoporous silica (MPS) is a porous silica material with various pore structures. In this study, mesocellular foam silica (MCF) was synthesized and functionalized by hexamethyldisilazane (HMDS) to study effects of surface chemistry on benzene adsorption capability. Physical and chemical properties of pristine and functionalized MCFs were characterized and compared. Scanning and transmission electron microscopy showed that the complex pore structures of the MCFs were retained after the functionalization at relatively high temperature (573K). TGA and FTIR results showed that the functionalization led to a reduction of water adsorbed on the surfaces of the MCF. The functionalization improved adsorption of benzene compared to the pristine MCF and the optimum HMDS:SiO2 molar ratio was 1.5. The amount of benzene adsorbed has a linear relationship with the concentration of benzene in the environment. This relationship enables quantitative benzene detection by using the functionalized MCF as sensing materials in resistive-type or gravimetric-type benzene gas sensors.


2007 ◽  
Vol 21 (02n03) ◽  
pp. 123-128 ◽  
Author(s):  
R. GOVINDAIAH ◽  
T. BALAJI ◽  
ARBIND KUMAR ◽  
N. PARASURAM ◽  
Y. PURUSHOTHAM ◽  
...  

The present electronic industry requires capacitors having high capacitance with lower volume and space, high reliability and low leakage current. The solid tantalum capacitor ideally meets such requirements. In the present paper, the electrical characterization of tantalum anodes prepared from sodium reduced tantalum powder has been described. The capacitance, DC leakage current are measured for tantalum anodes made with different particle sizes of powders using the LCR Meter and DC Leakage Tester and compared with the physical and chemical properties. Interestingly, it was found that the DC leakage current decreases with decrease in particle size on contrary to the surface area. Besides, a trade-off appears imminent to establish the formation voltage and DC leakage current relationship.


2018 ◽  
Vol 21 (2) ◽  
pp. 127-131
Author(s):  
S. Rumh. Kadhim ◽  
Reihan Etefagh ◽  
H. Arabi

In this paper, pure and impure nanopowders of Li(Li0.021Mn0.54Ni0.125Co0.125)O2 were prepared with different percentages (x=0.02%, 0.05%, 0.075%, 0.10%) of Zn impurity by sol-gel method, and the effect of different percentages were investigated on the structural, physical and chemical properties of the samples. These properties of samples characterized by X-ray diffraction (XRD), field-scattering microscopy (FESEM), X-ray energy spectroscopy (EDS), transmission electron microscopy (TEM), thermogravimetric analysis (TGA), differential thermal analysis (DTA), infrared spectroscopy (FTIR), and the results of characterization were investigation. All the reflection peaks indicate that the samples have standard α-NaFeO2 layered structure with the space group R3m, except for the super lattice ordering between 22°-25°.The FESEM images have shown that these nanoparticles have Hexagonal structures for doped and undoped nanopowders. The particle size of nanopowders in the range of 30-80 nm the chemical analysis of EDS has proven the presence of Zn in the samples. TG /DTA measurements showed weight loss in pure and impure of nanopowders. In infrared spectroscopy (FTIR), the connection bonds and chemical elements used in these nanopowders have been investigated.


Author(s):  
O. Popoola ◽  
A.H. Heuer ◽  
P. Pirouz

The addition of fibres or particles (TiB2, SiC etc.) into TiAl intermetallic alloys could increase their toughness without compromising their good high temperature mechanical and chemical properties. This paper briefly discribes the microstructure developed by a TiAl/TiB2 composite material fabricated with the XD™ process and forged at 960°C.The specimens for transmission electron microscopy (TEM) were prepared in the usual way (i.e. diamond polishing and argon ion beam thinning) and examined on a JEOL 4000EX for microstucture and on a Philips 400T equipped with a SiLi detector for microanalyses.The matrix was predominantly γ (TiAl with L10 structure) and α2(TisAl with DO 19 structure) phases with various morphologies shown in figure 1.


1995 ◽  
Vol 391 ◽  
Author(s):  
W.F. Mcarthur ◽  
K.M. Ring ◽  
K.L. Kavanagh

AbstractThe feasibility of Si-implanted TiN as a diffusion barrier between Cu and Si was investigated. Barrier effectiveness was evaluated via reverse leakage current of Cu/TixSiyNz/Si diodes as a function of post-deposition annealing temperature and time, and was found to depend heavily on the film composition and microstructure. TiN implanted with Si28, l0keV, 5xl016ions/cm2 formed an amorphous ternary TixSiyNz layer whose performance as a barrier to Cu diffusion exceeded that of unimplanted, polycrystalline TiN. Results from current-voltage, transmission electron microscopy (TEM), and Auger depth profiling measurements will be presented. The relationship between Si-implantation dose, TixSiyNz structure and reverse leakage current of Cu/TixSiyNz/Si diodes will be discussed, along with implications as to the suitability of these structures in Cu metallization.


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