Steric Hindrance‐ and Work Function‐Promoted High Performance for Electrochemical CO Methanation on Antisite Defects of MoS 2 and WS 2

ChemSusChem ◽  
2021 ◽  
Author(s):  
Xue Yao ◽  
Zhi‐Wen Chen ◽  
Guo‐Jun Liu ◽  
Xing‐You Lang ◽  
Yong‐Fu Zhu ◽  
...  
Keyword(s):  
Work Function ◽  
Steric Hindrance ◽  
High Performance ◽  
Co Methanation ◽  
Antisite Defects

High Performance β‐Ga 2 O 3 Schottky Barrier Transistors with Large Work Function TMD Gate of NbS 2 and TaS 2

2021 ◽  
pp. 2010303
Author(s):  
Ki‐Tae Kim ◽  
Hye‐Jin Jin ◽  
Wonjun Choi ◽  
Yeonsu Jeong ◽  
Hyung Gon Shin ◽  
...  
Keyword(s):  
Work Function ◽  
Schottky Barrier ◽  
High Performance ◽  
Large Work

Administration of the D-A structure and steric hindrance effect to construct efficient red emitters for high-performance OLEDs with low efficiency roll-off

2021 ◽  
Vol 192 ◽  
pp. 109398
Author(s):  
Guan-Yu Ding ◽  
Chun-Xiu Zang ◽  
Han Zhang ◽  
Zhong-Min Su ◽  
Guang-Fu Li ◽  
...  
Keyword(s):  
Steric Hindrance ◽  
High Performance ◽  
Low Efficiency

scholarly journals Solution-Processed Transparent Conducting Electrodes for Flexible Organic Solar Cells with 16.61% Efficiency

2021 ◽  
Vol 13 (1) ◽  
Author(s):  
Juanyong Wan ◽  
Yonggao Xia ◽  
Junfeng Fang ◽  
Zhiguo Zhang ◽  
Bingang Xu ◽  
...  
Keyword(s):  
Solar Cells ◽  
Work Function ◽  
Organic Solar Cells ◽  
High Performance ◽  
High Efficiency ◽  
Electrical Stability ◽  
Solution Processed ◽  
Good Thermal Stability ◽  
Transparent Conducting ◽  
High Flexibility

AbstractNonfullerene organic solar cells (OSCs) have achieved breakthrough with pushing the efficiency exceeding 17%. While this shed light on OSC commercialization, high-performance flexible OSCs should be pursued through solution manufacturing. Herein, we report a solution-processed flexible OSC based on a transparent conducting PEDOT:PSS anode doped with trifluoromethanesulfonic acid (CF3SO3H). Through a low-concentration and low-temperature CF3SO3H doping, the conducting polymer anodes exhibited a main sheet resistance of 35 Ω sq−1 (minimum value: 32 Ω sq−1), a raised work function (≈ 5.0 eV), a superior wettability, and a high electrical stability. The high work function minimized the energy level mismatch among the anodes, hole-transporting layers and electron-donors of the active layers, thereby leading to an enhanced carrier extraction. The solution-processed flexible OSCs yielded a record-high efficiency of 16.41% (maximum value: 16.61%). Besides, the flexible OSCs afforded the 1000 cyclic bending tests at the radius of 1.5 mm and the long-time thermal treatments at 85 °C, demonstrating a high flexibility and a good thermal stability.

scholarly journals A Novel Organic–Inorganic Hybrid Admixture for Increasing Flowability and Reducing Viscosity of Ultra-High Performance Paste

Materials ◽  
2020 ◽  
Vol 13 (15) ◽  
pp. 3385 ◽  
Author(s):  
Min Wang ◽  
Hao Yao
Keyword(s):  
Steric Hindrance ◽  
High Performance ◽  
High Performance Concrete ◽  
High Viscosity ◽  
Inorganic Hybrid ◽  
Oh Groups ◽  
Low Viscosity ◽  
Binder Ratio ◽  
The One ◽  
Water Binder Ratio

The low flowability and high viscosity of ultra-high performance concrete (UHPC), which is mainly caused by the silica fume (SF) agglomeration and low water–binder ratio, is a severe defect in its engineering applications. Herein, a novel organic–inorganic hybrid (OIH) admixture was synthesized by grafting comb-like polycarboxylate ether (PCE) onto the surface of SF. On the one hand, PCE-grafting could effectively prevent SF agglomeration and improve the dispersion of SF core. The reason being the consumption of polar silicon hydroxyl (Si-OH) groups on the surface of SF and the steric hindrance effect generated from PCE arms. On the other hand, OIH admixture could adsorb onto the surface of cement and SF particles by electrostatic interaction, exhibiting stronger steric hindrance effect than traditional comb-like PCE. As a result, UHPC system with this star-like OIH admixture presented high flowability and low viscosity at low water–binder ratio (0.18).

High performance transparent polyimides by controlling steric hindrance of methyl side groups

2019 ◽  
Vol 120 ◽  
pp. 109235 ◽  
Author(s):  
Qi Wu ◽  
Xiaoru Ma ◽  
Feng Zheng ◽  
Xuemin Lu ◽  
Qinghua Lu
Keyword(s):  
Steric Hindrance ◽  
High Performance

High‐Performance Quantum‐Dot Light‐Emitting Diodes Using NiO x Hole‐Injection Layers with a High and Stable Work Function

2019 ◽  
Vol 30 (5) ◽  
pp. 1907265 ◽  
Author(s):  
Jian Lin ◽  
Xingliang Dai ◽  
Xiaoyong Liang ◽  
Desui Chen ◽  
Xuerong Zheng ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Work Function ◽  
High Performance ◽  
Light Emitting Diodes ◽  
Hole Injection ◽  
Light Emitting

Nickel Silicide Work Function Tuning Study In Metal-Gate CMOS Applications

2004 ◽  
Vol 829 ◽  
Author(s):  
Jun Yuan ◽  
Grant Z. Pan ◽  
Yu-Lin Chao ◽  
Jason C.S. Woo
Keyword(s):  
Work Function ◽  
High Performance ◽  
Gate Oxide ◽  
Nickel Silicide ◽  
Oxide Semiconductor ◽  
Flat Band ◽  
Oxide Interface ◽  
Metal Gate ◽  
Activation Temperature ◽  
Pile Up

ABSTRACTMid-gap work function (∼4.7eV) for mono-nickel-silicide (NiSi) was obtained by extrapolating flat band voltages of metal-oxide-semiconductor (MOS) capacitors with different gate oxide thickness. Both silicidation temperature and time can affect the nickel silicide work function as a result of different Ni:Si ratio close to the gate oxide interface. Arsenic implantation into the polysilicon before silicidation can shift the NiSi work function towards the silicon conduction band, which makes it suitable for high performance NMOS applications. The physical mechanism responsible for this work function shift is arsenic pile-up at the oxide interface during the nickel silicidation process. Therefore, dual work function metal gate can be obtained by using a single gate full silicidation process. Silicidation temperature and time also affect the work function shift from arsenic dopant, and the incomplete gate silicidation can have the maximum work function modification effect. Arsenic activation temperature before silicidation was found to have a significant effect on the work function shift. Un-annealed samples exhibit a minimum shift in work function due to the low dopant pile-up concentration at the oxide interface.

scholarly journals Two Dimensional β-InSe with Layer-Dependent Properties: Band Alignment, Work Function and Optical Properties

Nanomaterials ◽  
2019 ◽  
Vol 9 (1) ◽  
pp. 82 ◽  
Author(s):  
David K. Sang ◽  
Huide Wang ◽  
Meng Qiu ◽  
Rui Cao ◽  
Zhinan Guo ◽  
...  
Keyword(s):  
Optical Properties ◽  
Work Function ◽  
High Performance ◽  
Density Functional ◽  
Electronic Band Structure ◽  
Strong Dependence ◽  
Band Alignment ◽  
Thickness Variation ◽  
Two Dimensional ◽  
Electronic Band

Density functional theory calculations of the layer (L)-dependent electronic band structure, work function and optical properties of β-InSe have been reported. Owing to the quantum size effects (QSEs) in β-InSe, the band structures exhibit direct-to-indirect transitions from bulk β-InSe to few-layer β-InSe. The work functions decrease monotonically from 5.22 eV (1 L) to 5.0 eV (6 L) and then remain constant at 4.99 eV for 7 L and 8 L and drop down to 4.77 eV (bulk β-InSe). For optical properties, the imaginary part of the dielectric function has a strong dependence on the thickness variation. Layer control in two-dimensional layered materials provides an effective strategy to modulate the layer-dependent properties which have potential applications in the next-generation high performance electronic and optoelectronic devices.

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