Fast-switching-speed, low-forward-voltage-drop static induction (SI) thyristor

1996 ◽  
Vol 116 (3) ◽  
pp. 107-115 ◽  
Author(s):  
Mitsuhide Maeda ◽  
Takuji Keno ◽  
Yuji Suzuki ◽  
Toshiro Abe
Keyword(s):  
Voltage Drop ◽  
Forward Voltage ◽  
Switching Speed ◽  
Fast Switching ◽  
Forward Voltage Drop ◽  
Static Induction ◽  
Fast Switching Speed

A 10 kV 4H-SiC Bipolar Turn Off Thyristor (BTO) with Positive Temperature Coefficient of VF, Current Saturation Capability and Fast Switching Speed

2010 ◽  
Vol 645-648 ◽  
pp. 1045-1048 ◽  
Author(s):  
Qing Chun Jon Zhang ◽  
Jim Richmond ◽  
Craig Capell ◽  
Anant K. Agarwal ◽  
John W. Palmour ◽  
...  
Keyword(s):  
Temperature Coefficient ◽  
Voltage Drop ◽  
Positive Temperature Coefficient ◽  
Positive Temperature ◽  
Switching Speed ◽  
Fast Switching ◽  
Current Saturation ◽  
Forward Voltage Drop ◽  
Junction Transistor ◽  
Fast Switching Speed

A novel power device configuration, the Bipolar Turn Off thyristor (BTO), was proposed and demonstrated in SiC. The BTO operates in anode switch configuration consisting of a 9 kV SiC p-type Gate Turn Off thyristor (GTO) and a 1600 V SiC n-type Bipolar Junction Transistor (BJT). Compared with SiC GTOs, several new features have been accomplished in the BTO: (1) A positive temperature coefficient of forward voltage drop, (2) Anode current saturation capability, and (3) A simple gate driver and fast switching speed.

Cascode Configuration of SiC-BGSIT and Si-MOSFET with Low On-Resistance and High Transconductance

2016 ◽  
Vol 858 ◽  
pp. 1095-1098
Author(s):  
Masayuki Yamamoto ◽  
Yasunori Tanaka ◽  
Tsutomu Yatsuo ◽  
Koji Yano
Keyword(s):  
Switching Speed ◽  
Reverse Transfer ◽  
Switching Device ◽  
Fast Switching ◽  
Static Induction Transistor ◽  
Static Induction ◽  
High Transconductance ◽  
Fast Switching Speed

We investigate a cascode configuration of a normally-on SiC-Buried Gate Static Induction Transistor (SiC-BGSIT) and Si-MOSFET as an alternative switching device of the SiC-MOSFET. It is shown that the transconductance of our cascode device is much higher than that of commercial SiC-MOSFETs while the switching speed is much faster than that of normally-off SiC-BGSITs. The origin of the fast switching speed in this cascode configuration is discussed in terms of a simulated reverse transfer capacitance.

Design, Yield and Process Capability Study of 8 kV 4H-SiC PIN Diodes

2012 ◽  
Vol 717-720 ◽  
pp. 953-956 ◽  
Author(s):  
Alex V. Bolotnikov ◽  
Peter A. Losee ◽  
Kevin Matocha ◽  
Jeff Nasadoski ◽  
John Glaser ◽  
...  
Keyword(s):  
Material Properties ◽  
Room Temperature ◽  
Voltage Drop ◽  
Quality Improvements ◽  
Forward Voltage ◽  
Pin Diodes ◽  
Size Dependent ◽  
Fast Switching ◽  
Forward Voltage Drop ◽  
Design Yield

This paper presents a study of performance and scalability of 8kV SiC PIN diodes focusing on area-dependent yield and sensitivity to material properties variation. Successfully fabricated 18 and 36 mm2 SiC-PiN diodes exhibited avalanche breakdown above 8 kV and < 5V forward voltage drop at 100 A/cm2 current density. The fast switching operation of these diodes up to ~5 kHz frequency is evidenced by reverse recovery measurements with by double-pulse inductive switching tests. The devices exhibit 0.142 and 0.169 uC/cm2 stored charge at room temperature and 125oC, respectively, when turned-off from Jf = 100A/cm2 to Vr = 2.1 kV. The measured diode breakdown voltage exhibited location and size dependent yield, indicating the necessity of material quality improvements for production.

Development of 1200 V, 3.7 mΩ-cm2 4H-SiC DMOSFETs for Advanced Power Applications

2012 ◽  
Vol 717-720 ◽  
pp. 1059-1064 ◽  
Author(s):  
Sei Hyung Ryu ◽  
Lin Cheng ◽  
Sarit Dhar ◽  
Craig Capell ◽  
Charlotte Jonas ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Room Temperature ◽  
Voltage Drop ◽  
Drain Current ◽  
Subthreshold Swing ◽  
Active Area ◽  
Gate Bias ◽  
Forward Voltage ◽  
Recent Developments ◽  
Forward Voltage Drop

We present our recent developments in 4H-SiC power DMOSFETs. 4H-SiC DMOSFETs with a room temperature specific on-resistance of 3.7 mΩ-cm2 with a gate bias of 20 V, and an avalanche voltage of 1550 V with gate shorted to source, was demonstrated. A threshold voltage of 3.5 V was extracted from the power DMOSFET, and a subthreshold swing of 200 mV/dec was measured. The device was successfully scaled to an active area of 0.4 cm2, and the resulting device showed a drain current of 377 A at a forward voltage drop of 3.8 V at 25oC.

Comparison of the Forward Voltage Drop of Si and SiC High Voltage Diodes

2014 ◽  
Vol 64 (7) ◽  
pp. 223-236 ◽  
Author(s):  
T. Gachovska ◽  
J. L. Hudgins
Keyword(s):  
High Voltage ◽  
Voltage Drop ◽  
Forward Voltage ◽  
Forward Voltage Drop

10 kV, 10 A Bipolar Junction Transistors and Darlington Transistors on 4H-SiC

2010 ◽  
Vol 645-648 ◽  
pp. 1025-1028 ◽  
Author(s):  
Qing Chun Jon Zhang ◽  
Robert Callanan ◽  
Anant K. Agarwal ◽  
Albert A. Burk ◽  
Michael J. O'Loughlin ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Voltage Drop ◽  
Current Gain ◽  
Bipolar Junction Transistors ◽  
Collector Current ◽  
Forward Voltage ◽  
Collector Voltage ◽  
Forward Voltage Drop ◽  
Chip Size ◽  
Dc Current

4H-SiC Bipolar Junction Transistors (BJTs) and hybrid Darlington Transistors with 10 kV/10 A capability have been demonstrated for the first time. The SiC BJT (chip size: 0.75 cm2 with an active area of 0.336 cm2) conducts a collector current of 10 A (~ 30 A/cm2) with a forward voltage drop of 4.0 V (forced current gain βforced: 20) corresponding to a specific on-resistance of ~ 130 mΩ•cm2 at 25°C. The DC current gain, β, at a collector voltage of 15 V is measured to be 28 at a base current of 1 A. Both open emitter breakdown voltage (BVCBO) and open base breakdown voltage (BVCEO) of ~10 kV have been achieved. The 10 kV SiC Darlington transistor pair consists of a 10 A SiC BJT as the output device and a 1 A SiC BJT as the driver. The forward voltage drop of 4.5 V is measured at 10 A of collector current. The DC forced current gain at the collector voltage of 5.0 V was measured to be 440 at room temperature.

scholarly journals 10 kV Silicon Carbide PiN Diodes—From Design to Packaged Component Characterization

Energies ◽  
2019 ◽  
Vol 12 (23) ◽  
pp. 4566 ◽  
Author(s):  
Asllani ◽  
Morel ◽  
Phung ◽  
Planson
Keyword(s):  
Silicon Carbide ◽  
Leakage Current ◽  
Voltage Drop ◽  
Forward Bias ◽  
Forward Voltage ◽  
Pin Diodes ◽  
Pulse Switching ◽  
Turn On ◽  
Forward Voltage Drop ◽  
Fabrication And Characterization

This paper presents the design, fabrication and characterization results obtained on the last generation (third run) of SiC 10 kV PiN diodes from SuperGrid Institute. In forward bias, the 59 mm2 diodes were tested up to 100 A. These devices withstand voltages up to 12 kV on wafer (before dicing, packaging) and show a low forward voltage drop at 80 A. The influence of the temperature from 25 °C to 125 °C has been assessed and shows that resistivity modulation occurs in the whole temperature range. Leakage current at 3 kV increases with temperature, while being three orders of magnitude lower than those of equivalent Si diodes. Double-pulse switching tests reveal the 10 kV SiC PiN diode’s outstanding performance. Turn-on dV/dt and di/dt are −32 V/ns and 311 A/µs, respectively, whereas turn-off dV/dt and di/dt are 474 V/ns and −4.2 A/ns.

Sign in / Sign up

Export Citation Format

Share Document