P-9: Study of the Origin of Major Donor States in Oxide Semiconductor

2014 ◽  
Vol 45 (1) ◽  
pp. 975-978 ◽  
Author(s):  
Masashi Oota ◽  
Noritaka Ishihara ◽  
Motoki Nakashima ◽  
Yoichi Kurosawa ◽  
Takuya Hirohashi ◽  
...  
2014 ◽  
Vol 116 (21) ◽  
pp. 213703 ◽  
Author(s):  
Motoki Nakashima ◽  
Masashi Oota ◽  
Noritaka Ishihara ◽  
Yusuke Nonaka ◽  
Takuya Hirohashi ◽  
...  
Keyword(s):  

Author(s):  
N. David Theodore ◽  
Andre Vantomme ◽  
Peter Crazier

Contact is typically made to source/drain regions of metal-oxide-semiconductor field-effect transistors (MOSFETs) by use of TiSi2 or CoSi2 layers followed by AI(Cu) metal lines. A silicide layer is used to reduce contact resistance. TiSi2 or CoSi2 are chosen for the contact layer because these silicides have low resistivities (~12-15 μΩ-cm for TiSi2 in the C54 phase, and ~10-15 μΩ-cm for CoSi2). CoSi2 has other desirable properties, such as being thermally stable up to >1000°C for surface layers and >1100°C for buried layers, and having a small lattice mismatch with silicon, -1.2% at room temperature. During CoSi2 growth, Co is the diffusing species. Electrode shorts and voids which can arise if Si is the diffusing species are therefore avoided. However, problems can arise due to silicide-Si interface roughness (leading to nonuniformity in film resistance) and thermal instability of the resistance upon further high temperature annealing. These problems can be avoided if the CoSi2 can be grown epitaxially on silicon.


2017 ◽  
Vol 18 (2) ◽  
pp. 302-322
Author(s):  
Fajar Hardoyono

Abstract: The development of aromatic sensor array instrument for the detection of alcohol in perfume. The research was conducted by developing the sensor array using 8 sensors made of metal oxide semiconductor. The sensor types used in this study consisted of TGS 813, TGS 822, TGS 2600, TGS 826, TGS 2611, TGS 2620, TGS 2612 and TGS 2602. Response patterns of 8 sensors formed a sensor array pattern used to detect the aroma of 2 groups of samples perfume made from the essential oil of ginger. The first sample group is pure ginger atsiri oil without mixed alcohol. The second sample group was made from the ginger atsiri oil mixed with alcohol with a level of 0.02 M. The results of the data recording show that the developed instrument is able to dissect the first sample group with the second sample group. Data analysis using principal component analysis method (PCA shows that the instrument is able to distinguish the contaminated alcohol perfume group 0.2 M with the alcohol-free perfume group with 100% accuracy. Keywords: Sensor Aroma, Perfume.


Author(s):  
Pradip Sairam Pichumani ◽  
Fauzia Khatkhatay

Abstract Silicon photonics is a disruptive technology that aims for monolithic integration of photonic devices onto the complementary metal-oxide-semiconductor (CMOS) technology platform to enable low-cost high-volume manufacturing. Since the technology is still in the research and development phase, failure analysis plays an important role in determining the root cause of failures seen in test vehicle silicon photonics modules. The fragile nature of the test vehicle modules warrants the development of new sample preparation methods to facilitate subsequent non-destructive and destructive analysis methods. This work provides an example of a single step sample preparation technique that will reduce the turnaround time while simultaneously increasing the scope of analysis techniques.


2020 ◽  
Vol 10 (4) ◽  
pp. 534-547
Author(s):  
Chiradeep Mukherjee ◽  
Saradindu Panda ◽  
Asish K. Mukhopadhyay ◽  
Bansibadan Maji

Background: The advancement of VLSI in the application of emerging nanotechnology explores quantum-dot cellular automata (QCA) which has got wide acceptance owing to its ultra-high operating speed, extremely low power dissipation with a considerable reduction in feature size. The QCA architectures are emerging as a potential alternative to the conventional complementary metal oxide semiconductor (CMOS) technology. Experimental: Since the register unit has a crucial role in digital data transfer between the electronic devices, such study leading to the design of cost-efficient and highly reliable QCA register is expected to be a prudent area of research. A thorough survey on the existing literature shows that the generic models of Serial-in Serial Out (SISO), Serial-in-Parallel-Out (SIPO), Parallel-In- Serial-Out (PISO) and Parallel-in-Parallel-Out (PIPO) registers are inadequate in terms of design parameters like effective area, delay, O-Cost, Costα, etc. Results: This work introduces a layered T gate for the design of the D flip flop (LTD unit), which can be broadly used in SISO, SIPO, PISO, and PIPO register designs. For detection and reporting of high susceptible errors and defects at the nanoscale, the reliability and defect tolerant analysis of LTD unit are also carried out in this work. The QCA design metrics for the general register layouts using LTD unit is modeled. Conclusion: Moreover, the cost metrics for the proposed LTD layouts are thoroughly studied to check the functional complexity, fabrication difficulty and irreversible power dissipation of QCA register layouts.


Author(s):  
Kai Zhang ◽  
Weifeng Lü ◽  
Peng Si ◽  
Zhifeng Zhao ◽  
Tianyu Yu

Background: In state-of-the-art nanometer metal-oxide-semiconductor-field-effect- transistors (MOSFETs), optimization of timing characteristic is one of the major concerns in the design of modern digital integrated circuits. Objective: This study proposes an effective back-gate-biasing technique to comprehensively investigate the timing and its variation due to random dopant fluctuation (RDF) employing Monte Carlo methodology. Methods: To analyze RDF-induced timing variation in a 22-nm complementary metal-oxide semiconductor (CMOS) inverter, an ensemble of 1000 different samples of channel-doping for negative metal-oxide semiconductor (NMOS) and positive metal-oxide semiconductor (PMOS) was reproduced and the input/output curves were measured. Since back-gate bias is technology dependent, we present in parallel results with and without VBG. Results: It is found that the suppression of RDF-induced timing variations can be achieved by appropriately adopting back-gate voltage (VBG) through measurements and detailed Monte Carlo simulations. Consequently, the timing parameters and their variations are reduced and, moreover, that they are also insensitive to channel doping with back-gate bias. Conclusion: Circuit designers can appropriately use back-gate bias to minimize timing variations and improve the performance of CMOS integrated circuits.


Sign in / Sign up

Export Citation Format

Share Document