Unusually Large Lattice Mismatch-Induced Optical Behaviors of Au@Cu-Cu2
O Core-Shell Nanocrystals with Noncentrally Located Cores

Suffering from the indirect band gap, low carrier mobility, and large lattice mismatch with other semiconductor materials, one of the current challenges in Si-based materials and structures is to prepare...

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High mobility AlGaN/GaN heterostructures grown on Si substrates using a large lattice-mismatch induced stress control technology

Applied Physics Letters ◽

10.1063/1.4917504 ◽

2015 ◽

Vol 106 (14) ◽

pp. 142106 ◽

Cited By ~ 22

Author(s):

Jianpeng Cheng ◽

Xuelin Yang ◽

Ling Sang ◽

Lei Guo ◽

Anqi Hu ◽

...

Keyword(s):

Lattice Mismatch ◽

High Mobility ◽

Control Technology ◽

Stress Control ◽

Si Substrates ◽

Induced Stress ◽

Large Lattice ◽

Large Lattice Mismatch

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Epitaxial Growth of Copper, Silver and Gold on a Semiconducting Layered Material: Tungsten Disulfide

MRS Proceedings ◽

10.1557/proc-102-41 ◽

1987 ◽

Vol 102 ◽

Cited By ~ 2

Author(s):

D. L. Doering ◽

F. S. Ohuchi ◽

W. Jaegermann ◽

B. A. Parkinson

Keyword(s):

Thin Films ◽

Epitaxial Growth ◽

Lattice Mismatch ◽

Layered Material ◽

Tungsten Disulfide ◽

Layer By Layer ◽

Metal Contacts ◽

Layered Semiconductor ◽

Large Lattice ◽

Large Lattice Mismatch

ABSTRACTThe growth of copper, silver and gold thin films on tungsten disulfide has been examined as a model of metal contacts on a layered semiconductor. All three metals were found to grow epitaxially on the WS2. However, Cu appears to form a discontinuous film while Au and Ag grow layer by layer. Such epitaxial growth is somewhat surprising since there is a large lattice mismatch between the metals and the WS2.

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III-V monolithic resonant photoreceiver using local epitaxy and large lattice mismatch material

Microwave and Optical Technology Letters ◽

10.1002/mop.4650040602 ◽

1991 ◽

Vol 4 (6) ◽

pp. 217-219 ◽

Cited By ~ 2

Author(s):

S. Aboulhouda ◽

J. P. Vilcot ◽

M. Razeghi ◽

D. Decoster ◽

M. Francois ◽

...

Keyword(s):

Lattice Mismatch ◽

Large Lattice ◽

Large Lattice Mismatch

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Equilibrium Analysis of Lattice-Mismatched Nanowire Heterostructures

MRS Proceedings ◽

10.1557/proc-737-f10.4 ◽

2002 ◽

Vol 737 ◽

Cited By ~ 5

Author(s):

E. Ertekin ◽

P.A. Greaney ◽

T. D. Sands ◽

D. C. Chrzan

Keyword(s):

Simple Model ◽

Misfit Dislocation ◽

Critical Thickness ◽

Lattice Mismatch ◽

Equilibrium Analysis ◽

Misfit Dislocations ◽

Model Based ◽

Large Lattice ◽

Large Lattice Mismatch

ABSTRACTThe quality of lattice-mismatched semiconductor heterojunctions is often limited by the presence of misfit dislocations. Nanowire geometries offer the promise of creating highly mismatched, yet dislocation free heterojunctions. A simple model, based upon the critical thickness model of Matthews and Blakeslee for misfit dislocation formation in planar heterostructures, illustrates that there exists a critical nanowire radius for which a coherent heterostructured nanowire system is unstable with respect to the formation of misfit dislocations. The model indicates that within the nanowire geometry, it should be possible to create perfect heterojunctions with large lattice-mismatch.

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Epitaxial Growth of Germanium on Silicon for Light Emitters

International Journal of Photoenergy ◽

10.1155/2012/768605 ◽

2012 ◽

Vol 2012 ◽

pp. 1-8 ◽

Cited By ~ 7

Author(s):

Chengzhao Chen ◽

Cheng Li ◽

Shihao Huang ◽

Yuanyu Zheng ◽

Hongkai Lai ◽

...

Keyword(s):

Quantum Wells ◽

Near Infrared ◽

Lattice Mismatch ◽

Chemical Vapor ◽

Sige Layer ◽

Infrared Light ◽

Multiple Quantum ◽

Light Emitters ◽

Large Lattice ◽

Large Lattice Mismatch

This paper describes the role of Ge as an enabler for light emitters on a Si platform. In spite of the large lattice mismatch of ~4.2% between Ge and Si, high-quality Ge layers can be epitaxially grown on Si by ultrahigh-vacuum chemical vapor deposition. Applications of the Ge layers to near-infrared light emitters with various structures are reviewed, including the tensile-strained Ge epilayer, the Ge epilayer with a delta-doping SiGe layer, and the Ge/SiGe multiple quantum wells on Si. The fundamentals of photoluminescence physics in the different Ge structures are discussed briefly.

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Nucleation of misfit and threading dislocations in GaSb/GaAs(001) heterostructure

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100167196 ◽

1996 ◽

Vol 54 ◽

pp. 946-947

Author(s):

W. Qian ◽

M. Skowronski ◽

R. Kaspi ◽

M. De Graef

Keyword(s):

Lattice Mismatch ◽

Strain Relaxation ◽

Threading Dislocation ◽

Threading Dislocations ◽

Misfit Dislocations ◽

Extended Defects ◽

Large Lattice ◽

Threading Dislocation Density ◽

Small Lattice ◽

Large Lattice Mismatch

GaSb thin film grown on GaAs is a promising substrate for fabrication of electronic and optical devices such as infrared photodetectors. However, these two materials exhibit a 7.8% lattice constant mismatch which raises concerns about the amount of extended defects introduced during strain relaxation. It was found that, unlike small lattice mismatched systems such as InxGa1-xAs/GaAs or GexSi1-x/Si(100), the GaSb/GaAs interface consists of a quasi-periodic array of 90° misfit dislocations, and the threading dislocation density is low despite its large lattice mismatch. This paper reports on the initial stages of GaSb growth on GaAs(001) substrates by molecular beam epitaxy (MBE). In particular, we discuss the possible formation mechanism of misfit dislocations at the GaSb/GaAs(001) interface and the origin of threading dislocations in the GaSb epilayer.GaSb thin films with nominal thicknesses of 5 to 100 nm were grown on GaAs(001) by MBE at a growth rate of about 0.8 monolayers per second.

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