High mobility AlGaN/GaN heterostructures grown on Si substrates using a large lattice-mismatch induced stress control technology

Narrow gap IV-VI materials like PbS, PbSnSe and PbSnTe are used for infrared detector device fabrication [1,2]. Earlier an intermediate Ila-fluoride buffer layer, which consisted of a BaF2/CaF2-stack of about 2000 Å thickness, was used to get epitaxial high quality layers on silicon substrates. This buffer is now reduced to a much thinner layer of only about 20 Å thick CaF2, regardless the large lattice mismatch between layer and substrate [3,4,5]. The question therefore arises if high quality IV-VI layers can be grown on Si-substrates without any buffer layer as e.g. in CdTe/Si or GaAs/Si systems.The aim of this work is to grow IV-VI layers directly on Si-substrates without any buffer layers to study the growth kinetics and epitaxial quality. PbSe was chosen as a representant of IV-VI materials, and layers were grown on (111)- and (100)-oriented silicon substrates.

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Growth of GaAs on Si and its Application to FETs and LEDs

MRS Proceedings ◽

10.1557/proc-67-53 ◽

1986 ◽

Vol 67 ◽

Cited By ~ 27

Author(s):

Masahiro Akiyama ◽

Yoshihiro Kawarada ◽

Seiji Nishi ◽

Takashi Ueda ◽

Katsuzo Kaminishi

Keyword(s):

Buffer Layer ◽

Lattice Mismatch ◽

Antiphase Domain ◽

Thin Layers ◽

The Other ◽

Heteroepitaxial Growth ◽

Si Substrates ◽

Large Lattice ◽

Strained Layer Superlattice ◽

Large Lattice Mismatch

In recent years, the heteroepitaxial growth of GaAs layers on Si substrates has been gained an increasing interest [1 - 14]. GaAs is one of the most important III-V materials and has been well studied and used for optical and electrical devices. On the other hand, with Si we have large size wafers of superior quality and sophisticated technologies and Si is a main material for semiconductor industries. Therefore, GaAs/Si system has possibilities for realizing new types of functional devices or ICs with GaAs and Si devices. This system, however, has two serious problems. One is the large lattice mismatch of about 4 % between these materials and the other is the polar on nonpolar problem i.e., the formation of an antiphase domain disorder. It was reported that when (211)-oriented Si substrates were used, there was no problem of the formation of an antiphase domain structure 5. For growing materials on lattice mismatched substrates, it was reported that the thin layers deposited at low temperatures were effective to relax the lattice mismatches for the systems such as SiC on Si[15] and Si on saphire [16]. In GaAs/Si system, the Ge buffer layer has been used to relax the lattice mismatch[17 - 22] It was also reported that the composite strained layer superlattice with GaP/GaAsP and GaAsP/GaAs was very effective as a buffer layer[23 - 25].

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Epitaxial Growth of 3C-SiC on T-shape columnar Si Substrates

MRS Proceedings ◽

10.1557/proc-815-j2.2 ◽

2004 ◽

Vol 815 ◽

Cited By ~ 1

Author(s):

S. Nishino ◽

A. Shoji ◽

T. Nishiguchi ◽

S. Ohshima

Keyword(s):

Epitaxial Growth ◽

Lattice Mismatch ◽

Defect Density ◽

Misfit Dislocations ◽

High Electron ◽

Large Area ◽

Si Substrates ◽

Large Lattice ◽

Large Lattice Mismatch ◽

Cubic Silicon Carbide

AbstractCubic silicon carbide (3C-SiC) is a suitable semiconductor material for high temperature, high power and high frequency electronic devices, because of its wide bandgap, high electron mobility and high saturated electron drift velocity. The usage of Si substrates has the advantage of large area substrates for the growth of 3C-SiC layers. However, large lattice mismatch between 3C-SiC and Si (>20%) has caused the generation of defects such as misfit dislocations, twins, stacking faults and threading dislocations at the SiC/Si interface. Lateral epitaxial overgrowth (ELOG) of 3C-SiC on Si substrates using SiO2 has been reported to reduce the defect density. In this report, epitaxial growth of 3C-SiC on T-shape patterned (100) Si substrates has been investigated to reduce interfacial defects.

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Effect of Substrate Misorientation on Heteroepitaxy with Large Lattice Mismatch: Ag/Si(111)

MRS Proceedings ◽

10.1557/proc-160-225 ◽

1989 ◽

Vol 160 ◽

Cited By ~ 2

Author(s):

D.C. McKenna ◽

K.-H. Park ◽

G.-C. Wang ◽

G.A. Smith

Keyword(s):

Misorientation Angle ◽

Lattice Mismatch ◽

Epitaxial Films ◽

Misalignment Angle ◽

Si Substrates ◽

Ion Channeling ◽

Flat Substrate ◽

Surface Normal ◽

Large Lattice ◽

Large Lattice Mismatch

AbstractEpitaxial films of Ag(111) were grown by Molecular Beam Epitaxy (MBE) on small angle misoriented Si(111) substrates. The surface normal was tilted 0 to 6° away from the Si(111) axis toward the [112] direction. The structure of the films was analyzed by x-ray diffraction and MeV He+ ion channeling. Despite a large lattice mismatch, good quality epitaxial films, 600–1200 Å thick, were grown on the misoriented Si substrates. Interestingly, the angle between the Si(111) axis of the substrate and the Ag(111) axis of the film (the misalignment angle) is not zero. In contrast to the perfect alignment on a flat substrate, the Ag(111) axis is tilted away from the Si(111) axis toward the surface normal. Axial MeV He+ ion channeling shows the misalignment angle (up to .6°) increases with substrate misorientation angle (~1/10 substrate misorientation angle).

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Enhanced luminescence/photodetecting bifunctional devices based on ZnO:Ga microwire/p-Si heterojunction by incorporating Ag nanowires

Nanoscale Advances ◽

10.1039/d1na00428j ◽

2021 ◽

Author(s):

Mingming Jiang ◽

Yang Liu ◽

Ruiming Dai ◽

Kai Tang ◽

Peng Wan ◽

...

Keyword(s):

Band Gap ◽

Carrier Mobility ◽

Lattice Mismatch ◽

Semiconductor Materials ◽

Large Lattice ◽

Ag Nanowires ◽

Large Lattice Mismatch ◽

Enhanced Luminescence ◽

Indirect Band Gap

Suffering from the indirect band gap, low carrier mobility, and large lattice mismatch with other semiconductor materials, one of the current challenges in Si-based materials and structures is to prepare...

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Epitaxial Growth of Copper, Silver and Gold on a Semiconducting Layered Material: Tungsten Disulfide

MRS Proceedings ◽

10.1557/proc-102-41 ◽

1987 ◽

Vol 102 ◽

Cited By ~ 2

Author(s):

D. L. Doering ◽

F. S. Ohuchi ◽

W. Jaegermann ◽

B. A. Parkinson

Keyword(s):

Thin Films ◽

Epitaxial Growth ◽

Lattice Mismatch ◽

Layered Material ◽

Tungsten Disulfide ◽

Layer By Layer ◽

Metal Contacts ◽

Layered Semiconductor ◽

Large Lattice ◽

Large Lattice Mismatch

ABSTRACTThe growth of copper, silver and gold thin films on tungsten disulfide has been examined as a model of metal contacts on a layered semiconductor. All three metals were found to grow epitaxially on the WS2. However, Cu appears to form a discontinuous film while Au and Ag grow layer by layer. Such epitaxial growth is somewhat surprising since there is a large lattice mismatch between the metals and the WS2.

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III-V monolithic resonant photoreceiver using local epitaxy and large lattice mismatch material

Microwave and Optical Technology Letters ◽

10.1002/mop.4650040602 ◽

1991 ◽

Vol 4 (6) ◽

pp. 217-219 ◽

Cited By ~ 2

Author(s):

S. Aboulhouda ◽

J. P. Vilcot ◽

M. Razeghi ◽

D. Decoster ◽

M. Francois ◽

...

Keyword(s):

Lattice Mismatch ◽

Large Lattice ◽

Large Lattice Mismatch

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Equilibrium Analysis of Lattice-Mismatched Nanowire Heterostructures

MRS Proceedings ◽

10.1557/proc-737-f10.4 ◽

2002 ◽

Vol 737 ◽

Cited By ~ 5

Author(s):

E. Ertekin ◽

P.A. Greaney ◽

T. D. Sands ◽

D. C. Chrzan

Keyword(s):

Simple Model ◽

Misfit Dislocation ◽

Critical Thickness ◽

Lattice Mismatch ◽

Equilibrium Analysis ◽

Misfit Dislocations ◽

Model Based ◽

Large Lattice ◽

Large Lattice Mismatch

ABSTRACTThe quality of lattice-mismatched semiconductor heterojunctions is often limited by the presence of misfit dislocations. Nanowire geometries offer the promise of creating highly mismatched, yet dislocation free heterojunctions. A simple model, based upon the critical thickness model of Matthews and Blakeslee for misfit dislocation formation in planar heterostructures, illustrates that there exists a critical nanowire radius for which a coherent heterostructured nanowire system is unstable with respect to the formation of misfit dislocations. The model indicates that within the nanowire geometry, it should be possible to create perfect heterojunctions with large lattice-mismatch.

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Epitaxial Growth of Germanium on Silicon for Light Emitters

International Journal of Photoenergy ◽

10.1155/2012/768605 ◽

2012 ◽

Vol 2012 ◽

pp. 1-8 ◽

Cited By ~ 7

Author(s):

Chengzhao Chen ◽

Cheng Li ◽

Shihao Huang ◽

Yuanyu Zheng ◽

Hongkai Lai ◽

...

Keyword(s):

Quantum Wells ◽

Near Infrared ◽

Lattice Mismatch ◽

Chemical Vapor ◽

Sige Layer ◽

Infrared Light ◽

Multiple Quantum ◽

Light Emitters ◽

Large Lattice ◽

Large Lattice Mismatch

This paper describes the role of Ge as an enabler for light emitters on a Si platform. In spite of the large lattice mismatch of ~4.2% between Ge and Si, high-quality Ge layers can be epitaxially grown on Si by ultrahigh-vacuum chemical vapor deposition. Applications of the Ge layers to near-infrared light emitters with various structures are reviewed, including the tensile-strained Ge epilayer, the Ge epilayer with a delta-doping SiGe layer, and the Ge/SiGe multiple quantum wells on Si. The fundamentals of photoluminescence physics in the different Ge structures are discussed briefly.

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