Characterization of dislocations by double crystal X-ray topography in back reflection

Synchrotron white-beam x-ray topographs taken in the back-reflection mode have proved a powerful tool in the study of defects in semiconductor-grade silicon carbide crystals. Capable of mapping the distribution of axial dislocations across a wafer's area (notably the devastating micropipe defect), it can also provide information on their natures. Under favorable conditions, various other types of defect may be observed in back-reflection topographs of SiC, among which are subgrain boundaries, inclusions, and basal plane dislocations. Observed defect images in backreflection topographs may be simulated using relatively simple computer algorithms based on ray tracing. It has been possible to use back-reflection topographs of SiC substrates with device structures deposited upon them to relate the incidence of defects to device failure.

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Characterization of Lattice Damage in Ion Implanted Silicon: Monte Carlo Simulation Combined with Double Crystal X-Ray Diffraction

phys stat sol (a) ◽

10.1002/pssa.2210910254 ◽

1985 ◽

Vol 91 (2) ◽

pp. K125-K127 ◽

Cited By ~ 6

Author(s):

F. Cembali ◽

A. M. Mazzone ◽

M. Servidori

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

X Ray Diffraction ◽

Double Crystal ◽

X Ray ◽

Lattice Damage ◽

Ion Implanted

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Characterization of silicon on insulator substrates using reflection mode double-crystal X-ray topography

Thin Solid Films ◽

10.1016/0040-6090(91)90388-e ◽

1991 ◽

Vol 206 (1-2) ◽

pp. 27-33 ◽

Cited By ~ 2

Author(s):

David I. Ma ◽

George J. Campisi ◽

Syed B. Qadri ◽

Martin C. Peckerar

Keyword(s):

Silicon On Insulator ◽

Reflection Mode ◽

Double Crystal ◽

X Ray

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Characterization of thin boron-doped silicon membranes by double-crystal x-ray topography

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.584496 ◽

1989 ◽

Vol 7 (6) ◽

pp. 1594 ◽

Cited By ~ 6

Author(s):

David I. Ma

Keyword(s):

Double Crystal ◽

X Ray ◽

Boron Doped ◽

Doped Silicon ◽

Silicon Membranes

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Dislocations Nucleating Growth in Liquid Phase Epitaxy of Gallium Arsenide

MRS Proceedings ◽

10.1557/proc-312-333 ◽

1993 ◽

Vol 312 ◽

Author(s):

Werner Möhling ◽

H. Weishart ◽

E. Bauser

Keyword(s):

Gallium Arsenide ◽

Liquid Phase ◽

Liquid Phase Epitaxy ◽

Crystal Surface ◽

Double Crystal ◽

Growth Interface ◽

Growth Step ◽

Burgers Vector ◽

X Ray ◽

Back Reflection

AbstractDislocations in GaAs are analysed by X-ray topography in order to relate their nature to their efficiency in generating growth steps. The analysis is mainly based on comparing double crystal back reflection images of the defects to calculated misorientations of the crystal surface which are caused at the outcrop. All types of dislocations are equally effective provided their Burgers vector has a component normal to the growth interface. Concentric growth step patterns, which develop in varying numbers on different samples are not caused by substrate dislocations.

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Structural Characterization of MBE Grown (001) CdTe Films by Means of Transmission Electron Microscopy, Low Temperature Photoluminescence and Double Crystal Rocking Curves.

MRS Proceedings ◽

10.1557/proc-77-615 ◽

1986 ◽

Vol 77 ◽

Cited By ~ 1

Author(s):

M. G. Burke ◽

W. J. Choyke ◽

N. J. Doyle ◽

Z. C. Feng ◽

M. H. Hanes ◽

...

Keyword(s):

Low Temperature ◽

Ion Milling ◽

Double Crystal ◽

X Ray ◽

Transmission Electron ◽

Line Defects ◽

Cdte Films ◽

Means Of Transmission ◽

Low Temperature Photoluminescence

ABSTRACTThe effects of chemical etching, mechanical thinning, and ion milling on the low temperature photoluminescence spectra of MBE grown (001) CdTe films are reported. Line defects observed by TEM are correlated with photoluminescence. It is shown that X-ray D.C.R.C, measurements in these films are weighted averages over the whole thickness of the films and therefore weakly reflect the structural perfection of the samples near the surface as deduced by photoluminescence.

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Characterization of Recoiling Oxygen in Silicon by Double-Crystal X-Ray Diffraction, Tem and Monte Carlo Simulation

MRS Proceedings ◽

10.1557/proc-69-197 ◽

1986 ◽

Vol 69 ◽

Author(s):

F. Cembali ◽

A. M. Mazzone ◽

M. Servidori

Keyword(s):

Monte Carlo Simulation ◽

Monte Carlo ◽

X Ray Diffraction ◽

Si Substrate ◽

Double Crystal ◽

X Ray ◽

Free Carriers ◽

Anomalous Formation

The widespread use of through-oxide implants in Si-MOS technology has prompted many studies to characterize the behaviour of oxygen recoiling from the passivating SiO2 layer into the Si substrate. These studies have given support for the idea that an anomalous formation of defects, which alter the profile of the implanted impurity and the mobility of the free carriers, is connected with the oxygen recoils.

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Microstructural Characterization of GaAs Substrates

MRS Proceedings ◽

10.1557/proc-69-379 ◽

1986 ◽

Vol 69 ◽

Cited By ~ 2

Author(s):

T. M. Moore ◽

S. Matteso ◽

W. M. Duncan ◽

R. J. Matyi

Keyword(s):

Defect Structure ◽

Microstructural Characterization ◽

Acoustic Microscopy ◽

Double Crystal ◽

X Ray ◽

Major Transitions ◽

Gaas Substrates ◽

Defect Microstructures ◽

Electron Acoustic

AbstractThe defect microstructures of GaAs substrates have been investigated in a multi-technique approach including integral cathodoluminescence (CL), scanning electron acoustic microscopy (SEAM), double crystal x-ray topography (XRT), and defect delineation etch. The XRT, CL, and SEAM studies are of identical areas on <100> SI GaAs(Cr) grown by the liquid encapsulated Czochralski (LEC) method and by the horizontal Bridgman (HB) method. Correlation was made to the defect structure revealed by defect delineation etching. The samples were also characterized by Fourier transform photoluminescence (FTPL) to qualitatively identify the major transitions contributing to the CL images. The CL, SEAM, XRT, and defect delineation etch images of each material are compared and their different perspectives are discussed.

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Characterization of epilayers by X-ray double crystal rocking curve peak profile analysis

Journal of Crystal Growth ◽

10.1016/0022-0248(94)00860-4 ◽

1995 ◽

Vol 148 (1-2) ◽

pp. 31-34 ◽

Cited By ~ 3

Author(s):

Haiyan An ◽

Ming Li ◽

Shuren Yang ◽

Zhenhong Mai ◽

Shiyong Liu

Keyword(s):

Profile Analysis ◽

Double Crystal ◽

Rocking Curve ◽

X Ray

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Diffraction imaging forin situcharacterization of double-crystal X-ray monochromators

Journal of Applied Crystallography ◽

10.1107/s1600576715017446 ◽

2015 ◽

Vol 48 (6) ◽

pp. 1734-1744 ◽

Cited By ~ 5

Author(s):

Stanislav Stoupin ◽

Zunping Liu ◽

Steve M. Heald ◽

Dale Brewe ◽

Mati Meron

Keyword(s):

Imaging Method ◽

Additional Insight ◽

Element Analysis ◽

Double Crystal ◽

X Ray ◽

Diffraction Imaging ◽

Insight Into ◽

Exit Beam

Imaging of the Bragg-reflected X-ray beam is proposed and validated as anin situmethod for characterization of the performance of double-crystal monochromators under the heat load of intense synchrotron radiation. A sequence of images is collected at different angular positions on the reflectivity curve of the second crystal and analyzed. The method provides rapid evaluation of the wavefront of the exit beam, which relates to local misorientation of the crystal planes along the beam footprint on the thermally distorted first crystal. The measured misorientation can be directly compared with the results of finite element analysis. The imaging method offers an additional insight into the local intrinsic crystal quality over the footprint of the incident X-ray beam.

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