Atomic Hydrogen Passivation of High Energy Hydrogen Implants

1991 ◽  
Vol 223 ◽  
Author(s):  
K. Srikanth ◽  
J. Shenal ◽  
S. Ashok
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
High Energy ◽  
Low Energy ◽  
Hydrogen Ion ◽  
Hydrogen Passivation ◽  
Ion Proton ◽  
Proton Implantation ◽  
Defects And Impurities ◽  
Transient Spectroscopy

ABSTRACTHigh-energy hydrogen ion (proton) implantation is used in Si for creating defects, while low-energy H is known for passivation of a variety of defects and impurities. We have carried out a study of low-energy (<0.4 keV) H passivation of defects produced by 100 keV H implantation. Both Schottky barrier transport and deep level transient spectroscopy measurements give evidence for self-passivation of defects produced by H.

Defects Created by 25 keV Hydrogen Implantation in n-type GaN

2001 ◽  
Vol 693 ◽  
Author(s):  
F. D. Auret ◽  
W. E. Meyer ◽  
H. A. van Laarhoven ◽  
S. A. Goodman ◽  
M. J. Legodi ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Deep Level Transient Spectroscopy ◽  
Isothermal Annealing ◽  
Deep Level ◽  
High Energy ◽  
Zero Bias ◽  
Hydrogen Implantation ◽  
Proton Implantation ◽  
Transient Spectroscopy ◽  
Annealing Experiments

AbstractWe have studied defects introduced in n-GaN during 25 keV hydrogen and 40 keV He implantation using deep level transient spectroscopy (DLTS). These measurements revealed that 25 keV hydrogen implantation introduces a complex set of electron traps, of which most are different to the defects observed after high-energy (MeV) electron and proton implantation. At least three of the defects detected after 25 keV proton implantation exhibit a metastable character in that they can be reproducibly removed and re-introduced during reverse and zero bias anneal cycles. Isochronal and isothermal annealing experiments yielded low activation energies of approximately 0.1 – 0.2 eV for both processes. By comparison, 40 keV He ion implantation introduced the same metastable defects, but in different relative concentrations.

Rapid Thermal Process-Induced Defects : Gettering of Internal Contaminants

1989 ◽  
Vol 163 ◽  
Author(s):  
Bouchaib Hartiti ◽  
Wolfgang Eichhammer ◽  
Jean-Claude Muller ◽  
Paul Siffert
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Thermal Process ◽  
Deep Level ◽  
Low Energy ◽  
Hydrogen Ion ◽  
Rapid Thermal Process ◽  
Slow Cooling ◽  
Transient Spectroscopy ◽  
Induced Defects ◽  
Hydrogen Ion Implantation

AbstractWe show in this study that RTP-induced defects analysed by Deep Level Transient Spectroscopy (DLTS) are related to residual impurities present in as-grown silicon wafers. For one particular material an activation of a specific residual metallic impurity was observed in the temperature range 800 - 1000°C. This impurity can be returned to an electrically inactive precipitated form by classical thermal annealing (CTA) with a slow cooling rate or neutralized by means of low-energy hydrogen ion implantation.

Persistent Photoconductivity And Thermal Recovery Kinetics Of Low Energy Ar + Bombarded GaAs

1991 ◽  
Vol 223 ◽  
Author(s):  
A. Vaseashta ◽  
L. C. Burton
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Thermal Recovery ◽  
Low Energy ◽  
Persistent Photoconductivity ◽  
Transport Parameters ◽  
Excellent Correlation ◽  
Proposed Model ◽  
Transient Spectroscopy ◽  
Kinetics Of

ABSTRACTKinetics of persistent photoconductivity, photoquenching, and thermal and optical recovery observed in low energy Ar+ bombarded on (100) GaAs surfaces have been investigated. Rate and transport equations for these processes were derived and simulated employing transport parameters, trap locations and densities determined by deep level transient spectroscopy. Excellent correlation was obtained between the results of preliminary simulation and the experimentally observed values. The exponential decay of persistent photoconductivity response curve was determined to be due to metastable electron traps with longer lifetime and is consistent with an earlier proposed model.

Current-Mode Deep Level Spectroscopy of Vanadium-Doped HPSI 4H-SiC

2020 ◽  
Vol 1004 ◽  
pp. 331-336
Author(s):  
Giovanni Alfieri ◽  
Lukas Kranz ◽  
Andrei Mihaila
Keyword(s):  
Deep Level Transient Spectroscopy ◽  
Scientific Community ◽  
Minority Carrier ◽  
Deep Level ◽  
Current Mode ◽  
Low Energy ◽  
The Other ◽  
Carrier Trap ◽  
Low Energy Electron ◽  
Transient Spectroscopy

SiC has currently attracted the interest of the scientific community for qubit applications. Despite the importance given to the properties of color centers in high-purity semi-insulating SiC, little is known on the electronic properties of defects in this material. In our study, we investigated the presence of electrically active levels in vanadium-doped substrates. Current mode deep level transient spectroscopy, carried out in the dark and under illumination, together with 1-D simulations showed the presence of two electrically active levels, one associated to a majority carrier trap and the other one to a minority carrier trap. The nature of the detected defects has been discussed in the light of the characterization performed on low-energy electron irradiated substrates and previous results found in the literature.

The Influence of an In-Situ Electric Field on H+ and He+ Implantation Induced Defects in Silicon

1993 ◽  
Vol 316 ◽  
Author(s):  
J. Ravi ◽  
Yu. Erokhin ◽  
S. Koveshnikov ◽  
G.A. Rozgonyi ◽  
C.W. White
Keyword(s):  
Electric Field ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Spectroscopy Technique ◽  
Deep Traps ◽  
Observed Behaviour ◽  
Proton Implantation ◽  
Transient Spectroscopy ◽  
Induced Defects

ABSTRACTThe influence of in-situ electronic perturbations on defect generation during 150 keV proton implantation into biased silicon p-n junctions has been investigated. The concentration and spatial distribution of the deep traps were characterized using a modification of the double corelation deep level transient spectroscopy technique (D-DLTS). With the in-situ electric field applied, a decrease in concentration of vacancy-related, as well as H-related, traps was observed. 500 keV He+ implantation was also performed to supplement the above studies and to differentiate any passivation effects due to hydrogen. A model based on the charge states of hydrogen and vacancies was used to explain the observed behaviour.

Deep Levels in P-Type 4H-SiC Induced by Low-Energy Electron Irradiation

2013 ◽  
Vol 740-742 ◽  
pp. 373-376 ◽  
Author(s):  
Kazuki Yoshihara ◽  
Masashi Kato ◽  
Masaya Ichimura ◽  
Tomoaki Hatayama ◽  
Takeshi Ohshima
Keyword(s):  
Electron Irradiation ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Deep Levels ◽  
Low Energy ◽  
Epitaxial Layers ◽  
Before And After ◽  
Low Energy Electron ◽  
Transient Spectroscopy ◽  
P Type

We have characterized deep levels in as-grown and electron irradiated p-type 4H-SiC epitaxial layers by the current deep-level transient spectroscopy (I-DLTS) method. A part of the samples were irradiated with electrons in order to introduce defects. As a result, we found that electron irradiation to p-type 4H-SiC created complex defects including carbon vacancy or interstitial. Moreover, we found that observed deep levels are different between before and after annealing, and thus annealing may change structures of defects.

scholarly journals Characterization of deep-level defects in GaNAs/GaAs heterostructures grown by APMOVPE

2016 ◽  
Vol 34 (4) ◽  
pp. 726-734 ◽  
Author(s):  
Łukasz Gelczuk ◽  
Maria Dąbrowska-Szata ◽  
Beata Ściana ◽  
Damian Pucicki ◽  
Damian Radziewicz ◽  
...  
Keyword(s):  
Atmospheric Pressure ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Electrical Parameters ◽  
Native Defects ◽  
Three Samples ◽  
Nitrogen Concentrations ◽  
Defects And Impurities ◽  
Transient Spectroscopy

AbstractConventional deep level transient spectroscopy (DLTS) and high-resolution Laplace DLTS techniques were used to study electrical properties of deep-level defects in dilute GaNAs epitaxial layers grown by atmospheric-pressure metalorganic vapourphase epitaxy (APMOVPE) on the GaAs substrate. Three samples with nitrogen concentrations of 1.2 %, 1.6 % and 2.7 % were investigated. In DLTS and LDLTS spectra of the samples, four predominant electron traps were observed. On the basis of the obtained electrical parameters and previously published results, one of the traps was associated with N-related complex defects, while the other traps with common GaAs-like native defects and impurities, called EL6, EL3 and EL2.

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