Effect of Hole Effective Mass and Carrier Concentration on the Conductivity of a Transparent p‐type LaCuOS Semiconductor with Good Transmittance in both Visible and Mid‐infrared Ranges

2021 ◽  
Author(s):  
Gang Gao ◽  
Lijia Tong ◽  
Lei Yang ◽  
Chunqiang Sun ◽  
Liangge Xu ◽  
...  
Keyword(s):  
Effective Mass ◽  
Carrier Concentration ◽  
Mid Infrared ◽  
Hole Effective Mass ◽  
P Type

Structural design principles for low hole effective mass s-orbital-based p-type oxides

2017 ◽  
Vol 5 (23) ◽  
pp. 5772-5779 ◽  
Author(s):  
Viet-Anh Ha ◽  
Francesco Ricci ◽  
Gian-Marco Rignanese ◽  
Geoffroy Hautier
Keyword(s):  
Effective Mass ◽  
First Principles ◽  
Structural Design ◽  
Carrier Mobility ◽  
Design Principles ◽  
Hole Effective Mass ◽  
P Type

We demonstrate through first principles computations how the metal–oxygen–metal angle directly drives the hole effective mass (thus the carrier mobility) in p-type s-orbital-based oxides.

Influence of nitrogen on hole effective mass and hole mobility in p-type modulation doped GaInNAs/GaAs quantum well structures

2013 ◽  
Vol 103 (8) ◽  
pp. 082121 ◽  
Author(s):  
F. Sarcan ◽  
O. Donmez ◽  
A. Erol ◽  
M. Gunes ◽  
M. C. Arikan ◽  
...  
Keyword(s):  
Quantum Well ◽  
Effective Mass ◽  
Hole Mobility ◽  
Hole Effective Mass ◽  
Quantum Well Structures ◽  
P Type

scholarly journals Identification and design principles of low hole effective mass p-type transparent conducting oxides

2013 ◽  
Vol 4 (1) ◽  
Author(s):  
Geoffroy Hautier ◽  
Anna Miglio ◽  
Gerbrand Ceder ◽  
Gian-Marco Rignanese ◽  
Xavier Gonze
Keyword(s):  
Effective Mass ◽  
Transparent Conducting Oxides ◽  
Design Principles ◽  
Hole Effective Mass ◽  
Conducting Oxides ◽  
Transparent Conducting ◽  
P Type

scholarly journals Easily doped p-type, low hole effective mass, transparent oxides

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Nasrin Sarmadian ◽  
Rolando Saniz ◽  
Bart Partoens ◽  
Dirk Lamoen
Keyword(s):  
Effective Mass ◽  
Hole Effective Mass ◽  
P Type

Design and Simulation of a Mid-Infrared Quantum Cascade Laser Based on Ge-Si Superlattices

2007 ◽  
Vol 121-123 ◽  
pp. 677-680
Author(s):  
Yan Wu Lu ◽  
Gregory Sun
Keyword(s):  
Effective Mass ◽  
Quantum Cascade Laser ◽  
Current Density ◽  
Population Inversion ◽  
Optical Gain ◽  
Light Hole ◽  
Mid Infrared ◽  
Hole Effective Mass ◽  
Quantum Cascade ◽  
Simple Quantum

This paper presents a novel valance intersubband laser based on Si-based Si-Ge superlattices grown on a relaxed Si0.5Ge0.5 buffer layer. Effective mass theory is used to calculate the inplane valence subband dispersion of Si-Ge superlattices within 6×6 Kane model. Analysis of the inplane energy dispersion shows that the light-hole effective mass is inverted at off zone center region. The laser structure can be designed with a simple quantum cascade scheme. Our calculation shows that with the electrical pump, it is possible to achieve population inversion between the two subbands at local k space where the light-hole effective mass is inverted. Optical gain of the order 100/cm can be achieved with a pumping current density 10 kA/cm2.

Low effective mass and carrier concentration optimization for high performance p-type Mg2(1−x)Li2xSi0.3Sn0.7solid solutions

2014 ◽  
Vol 16 (43) ◽  
pp. 23576-23583 ◽  
Author(s):  
Qiang Zhang ◽  
Long Cheng ◽  
Wei Liu ◽  
Yun Zheng ◽  
Xianli Su ◽  
...  
Keyword(s):  
Effective Mass ◽  
Carrier Concentration ◽  
High Performance ◽  
P Type

Effect of Cu doping on the electrical Properties of ZnTe by Vacuum Thermal Evaporation

2018 ◽  
Vol 31 (3) ◽  
pp. 20
Author(s):  
Sarmad M. M. Ali ◽  
Alia A.A. Shehab ◽  
Samir A. Maki
Keyword(s):  
Activation Energy ◽  
Electrical Conductivity ◽  
Hall Effect ◽  
Carrier Concentration ◽  
Hall Mobility ◽  
Cu Doping ◽  
Before And After ◽  
Hall Effect Measurements ◽  
Evaporation Technique ◽  
P Type

In this study, the ZnTe thin films were deposited on a glass substrate at a thickness of 400nm using vacuum evaporation technique (2×10-5mbar) at RT. Electrical conductivity and Hall effect measurements have been investigated as a function of variation of the doping ratios (3,5,7%) of the Cu element on the thin ZnTe films. The temperature range of (25-200°C) is to record the electrical conductivity values. The results of the films have two types of transport mechanisms of free carriers with two values of activation energy (Ea1, Ea2), expect 3% Cu. The activation energy (Ea1) increased from 29meV to 157meV before and after doping (Cu at 5%) respectively. The results of Hall effect measurements of ZnTe , ZnTe:Cu films show that all films were (p-type), the carrier concentration (1.1×1020 m-3) , Hall mobility (0.464m2/V.s) for pure ZnTe film, increases the carrier concentration (6.3×1021m-3) Hall mobility (2m2/V.s) for doping (Cu at 3%) film, but  decreases by increasing Cu concentration.

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