52.1: Invited Paper: Novel dual‐branch SPICE model for tandem structure OLED

2021 ◽  
Vol 52 (S1) ◽  
pp. 369-375
Author(s):  
Hanning Mai ◽  
Ian Underwood
Keyword(s):  
2017 ◽  
Vol E100.C (2) ◽  
pp. 118-121
Author(s):  
Kazuhiko SEGI ◽  
Shigeki NAKA ◽  
Hiroyuki OKADA
Keyword(s):  

2020 ◽  
Vol 96 (3s) ◽  
pp. 680-683
Author(s):  
А.В. Нуштаев ◽  
А.Г. Потупчик

Разработаны тестовые структуры для экстракции и верификации статических и динамических параметров SPICE-моделей транзисторов. Проведена экстракция SPICE-моделей МОП-транзисторов А-типа в рамках разработки комплекта средств проектирования для технологии КНИ-180. Проведена верификация статических и динамических параметров полученных моделей транзисторов. The paper highlights test structures for the extraction and verification of static and dynamic parameters of the transistor SPICE model. The SPICE models of A-type MOS transistors for development process design kit for S0I180 technology have been extracted. Verification of static and dynamic parameters of the obtained transistor models has been carried out.


Nanomaterials ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 687
Author(s):  
Shuolei Meng ◽  
Qianyuan Chen ◽  
Hongjian Lin ◽  
Feng Zhou ◽  
Youning Gong ◽  
...  

A simple and effective approach based on the liquid phase exfoliation (LPE) method has been put forward for synthesizing boron quantum dots (BQDs). By adjusting the interactions between bulk boron and various solvents, the average diameter of produced BQDs is about 7 nm. The nonlinear absorption (NLA) responses of as-prepared BQDs have been systematically studied at 515 nm and 1030 nm. Experimental results prove that BQDs possess broadband saturable absorption (SA) and good third-order nonlinear optical susceptibility, which are comparable to graphene. The fast relaxation time and slow relaxation time of BQDs at 515 nm and 1030 nm are about 0.394–5.34 ps and 4.45–115 ps, respectively. The significant ultrafast nonlinear optical properties can be used in optical devices. Here, we successfully demonstrate all-optical diode application based on BQDs/ReS2 tandem structure. The findings are essential for understanding the nonlinear optical properties in BQDs and open a new pathway for their applications in optical devices.


Energies ◽  
2020 ◽  
Vol 13 (1) ◽  
pp. 187 ◽  
Author(s):  
Kamil Bargieł ◽  
Damian Bisewski ◽  
Janusz Zarębski

The paper deals with the problem of modelling and analyzing the dynamic properties of a Junction Field Effect Transistor (JFET) made of silicon carbide. An examination of the usefulness of the built-in JFET Simulation Program with Integrated Circuit Emphasis (SPICE) model was performed. A modified model of silicon carbide JFET was proposed to increase modelling accuracy. An evaluation of the accuracy of the modified model was performed by comparison of the measured and calculated capacitance–voltage characteristics as well as the switching characteristics of JFETs.


2012 ◽  
Vol 33 (11) ◽  
pp. 114004
Author(s):  
Yiqun Wei ◽  
Xinnan Lin ◽  
Yuchao Jia ◽  
Xiaole Cui ◽  
Jin He ◽  
...  

1996 ◽  
Vol 424 ◽  
Author(s):  
H. C. Slade ◽  
M. S. Shur ◽  
S. C. Deane ◽  
M. Hack

AbstractWe have examined the material properties and operation of bottom-gate amorphous silicon thin film transistors (TFTs) using temperature measurements of the subthreshold current. From the derivative of current activation energy with respect to gate bias, we have deduced information about the density of states for several different transistor types. We have demonstrated that, in TFTs with thin active layers and top nitride passivation, the current conduction channel moves from the gate insulator interface to the passivation insulator interface as the transistor switches off. Our 2D simulations clarify these experimental results. We have examined the effect of bias stress on the transistors and analyzed the resulting reduction in the subthreshold slope. Based on these results, we have extended our analytic amorphous silicon TFI SPICE model to include the effect of bias stress.


1999 ◽  
Vol 75 (1) ◽  
pp. 1-7 ◽  
Author(s):  
Héctor Trujillo ◽  
Juan Cruz ◽  
Mairée Rivero ◽  
Mario Barrios
Keyword(s):  

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