52.1: Invited Paper: Novel dual‐branch SPICE model for tandem structure OLED

2021 ◽  
Vol 52 (S1) ◽  
pp. 369-375
Author(s):  
Hanning Mai ◽  
Ian Underwood
Keyword(s):  
Spice Model ◽  
Tandem Structure

Blue/Green Selective Organic Photodiodes with Tandem Structure

2017 ◽  
Vol E100.C (2) ◽  
pp. 118-121
Author(s):  
Kazuhiko SEGI ◽  
Shigeki NAKA ◽  
Hiroyuki OKADA
Keyword(s):  
Tandem Structure

ОСОБЕННОСТИ ЭКСТРАКЦИИ SPICE-МОДЕЛЕЙ ТРАНЗИСТОРОВ ДЛЯ ТЕХНОЛОГИЙ КНИ ГЛУБОКОГО СУБМИКРОННОГО УРОВНЯ

2020 ◽  
Vol 96 (3s) ◽  
pp. 680-683
Author(s):  
А.В. Нуштаев ◽  
А.Г. Потупчик
Keyword(s):  
Process Design ◽  
Development Process ◽  
Dynamic Parameters ◽  
Mos Transistors ◽  
Spice Model

Разработаны тестовые структуры для экстракции и верификации статических и динамических параметров SPICE-моделей транзисторов. Проведена экстракция SPICE-моделей МОП-транзисторов А-типа в рамках разработки комплекта средств проектирования для технологии КНИ-180. Проведена верификация статических и динамических параметров полученных моделей транзисторов. The paper highlights test structures for the extraction and verification of static and dynamic parameters of the transistor SPICE model. The SPICE models of A-type MOS transistors for development process design kit for S0I180 technology have been extracted. Verification of static and dynamic parameters of the obtained transistor models has been carried out.

SPICE Model of a Real Coil Inductance feature analysis with current variation

2020 ◽  
Author(s):  
Marius Florin Staniloiu ◽  
Horatiu Samir Popescu ◽  
Bogdan Ionut Glod ◽  
Mihai Iordache
Keyword(s):  
Feature Analysis ◽  
Spice Model ◽  
Coil Inductance ◽  
Current Variation

scholarly journals Scalable Production of Boron Quantum Dots for Broadband Ultrafast Nonlinear Optical Performance

Nanomaterials ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 687
Author(s):  
Shuolei Meng ◽  
Qianyuan Chen ◽  
Hongjian Lin ◽  
Feng Zhou ◽  
Youning Gong ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Relaxation Time ◽  
Nonlinear Optical ◽  
Average Diameter ◽  
Optical Devices ◽  
Nonlinear Optical Properties ◽  
Saturable Absorption ◽  
Nonlinear Optical Susceptibility ◽  
Tandem Structure

A simple and effective approach based on the liquid phase exfoliation (LPE) method has been put forward for synthesizing boron quantum dots (BQDs). By adjusting the interactions between bulk boron and various solvents, the average diameter of produced BQDs is about 7 nm. The nonlinear absorption (NLA) responses of as-prepared BQDs have been systematically studied at 515 nm and 1030 nm. Experimental results prove that BQDs possess broadband saturable absorption (SA) and good third-order nonlinear optical susceptibility, which are comparable to graphene. The fast relaxation time and slow relaxation time of BQDs at 515 nm and 1030 nm are about 0.394–5.34 ps and 4.45–115 ps, respectively. The significant ultrafast nonlinear optical properties can be used in optical devices. Here, we successfully demonstrate all-optical diode application based on BQDs/ReS2 tandem structure. The findings are essential for understanding the nonlinear optical properties in BQDs and open a new pathway for their applications in optical devices.

SPICE model of a real capacitor : Capacitive feature analysis with voltage variation

2020 ◽  
Author(s):  
Marius Florin Staniloiu ◽  
Horatiu Samir Popescu ◽  
Bogdan Ionut Glod ◽  
Mihai Iordache
Keyword(s):  
Feature Analysis ◽  
Spice Model ◽  
Voltage Variation

scholarly journals Modelling of Dynamic Properties of Silicon Carbide Junction Field-Effect Transistors (JFETs)

Energies ◽  
2020 ◽  
Vol 13 (1) ◽  
pp. 187 ◽  
Author(s):  
Kamil Bargieł ◽  
Damian Bisewski ◽  
Janusz Zarębski
Keyword(s):  
Silicon Carbide ◽  
Integrated Circuit ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Dynamic Properties ◽  
Modified Model ◽  
Spice Model ◽  
Capacitance Voltage ◽  
Effect Transistor ◽  
Switching Characteristics

The paper deals with the problem of modelling and analyzing the dynamic properties of a Junction Field Effect Transistor (JFET) made of silicon carbide. An examination of the usefulness of the built-in JFET Simulation Program with Integrated Circuit Emphasis (SPICE) model was performed. A modified model of silicon carbide JFET was proposed to increase modelling accuracy. An evaluation of the accuracy of the modified model was performed by comparison of the measured and calculated capacitance–voltage characteristics as well as the switching characteristics of JFETs.

A SPICE model for a phase-change memory cell based on the analytical conductivity model

2012 ◽  
Vol 33 (11) ◽  
pp. 114004
Author(s):  
Yiqun Wei ◽  
Xinnan Lin ◽  
Yuchao Jia ◽  
Xiaole Cui ◽  
Jin He ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Memory Cell ◽  
Conductivity Model ◽  
Spice Model ◽  
Change Memory

Physics of Below Threshold Current Distribution in a-Si:H TFTs

1996 ◽  
Vol 424 ◽  
Author(s):  
H. C. Slade ◽  
M. S. Shur ◽  
S. C. Deane ◽  
M. Hack
Keyword(s):  
Amorphous Silicon ◽  
Threshold Current ◽  
Gate Insulator ◽  
Subthreshold Slope ◽  
Silicon Thin Film ◽  
Bias Stress ◽  
Spice Model ◽  
Active Layers ◽  
Insulator Interface ◽  
Current Activation

AbstractWe have examined the material properties and operation of bottom-gate amorphous silicon thin film transistors (TFTs) using temperature measurements of the subthreshold current. From the derivative of current activation energy with respect to gate bias, we have deduced information about the density of states for several different transistor types. We have demonstrated that, in TFTs with thin active layers and top nitride passivation, the current conduction channel moves from the gate insulator interface to the passivation insulator interface as the transistor switches off. Our 2D simulations clarify these experimental results. We have examined the effect of bias stress on the transistors and analyzed the resulting reduction in the subthreshold slope. Based on these results, we have extended our analytic amorphous silicon TFI SPICE model to include the effect of bias stress.

Analysis of the fluxgate response through a simple spice model

1999 ◽  
Vol 75 (1) ◽  
pp. 1-7 ◽  
Author(s):  
Héctor Trujillo ◽  
Juan Cruz ◽  
Mairée Rivero ◽  
Mario Barrios
Keyword(s):  
Spice Model
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