In situ SEM/STM observations and growth control of monolayer graphene on SiC (0001) wide terraces

2016 ◽  
Vol 48 (11) ◽  
pp. 1221-1225 ◽  
Author(s):  
Chenxing Wang ◽  
Hitoshi Nakahara ◽  
Yahachi Saito
Keyword(s):  
Growth Control ◽  
Monolayer Graphene

In situ manipulation of fluorescence resonance energy transfer between quantum dots and monolayer graphene oxide by laser irradiation

Nanoscale ◽  
2019 ◽  
Vol 11 (3) ◽  
pp. 1236-1244 ◽  
Author(s):  
Wenjun He ◽  
Chengbing Qin ◽  
Zhixing Qiao ◽  
Yani Gong ◽  
Xiaorong Zhang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Graphene Oxide ◽  
Energy Transfer ◽  
Laser Irradiation ◽  
Fluorescence Resonance Energy Transfer ◽  
Resonance Energy Transfer ◽  
Resonance Energy ◽  
Monolayer Graphene ◽  
Fluorescence Resonance

Fluorescence resonance energy transfer between CdSeTe/ZnS quantum dots and monolayer graphene oxide is in situ manipulated by laser irradiation.

Uniformity Control of 3-Inch GaN/InGaN Layers Grown in Planetary Reactors®

2000 ◽  
Vol 618 ◽  
Author(s):  
H. Protzmann ◽  
M. Luenenbuerger ◽  
M. Bremser ◽  
M. Heuken ◽  
H. Juergensen
Keyword(s):  
Process Development ◽  
Growth Control ◽  
Growth Conditions ◽  
Nitride Layer ◽  
Group Iii ◽  
Production Type ◽  
Reactor Geometry ◽  
Simple Scaling ◽  
Group Iii Nitride

ABSTRACTWe report on recent results obtained using an AIX 2400G3HT production type Planetary Reactor® in the 5×3 inch configuration for growth of typical group-III nitride layer structures consisting of GaN, InGaN and AlGaN. The optimum reactor geometry has been found by extensive modeling of the reactor design. Increased thermal management allows maximum reactor temperatures above 1400°C. As a consequence of extensive reactor modeling, the process transfer from 6×2 inch to 5×3 inch configuration was carried out by simple scaling of the corresponding process parameters of the 6×2 inch configuration. The scaling factor is calculated with respect to the changed reactor geometry. We used optical reflectrometry for in-situ growth control during this process development and could confirm the theoretical scaling requirements for obtaining identical growth conditions as compared to the 6×2 inch reactor configuration. This is verified by the generation of identical reflectance spectrum features. This important issue of in-situ control is discussed in detail. The TMGa efficiency could be kept at about 17%. Switching to the 8×3 inch configuration the efficiency increases up to about 27%, which is an improvement of 63% as compared to the 6×2 inch configuration

In Situ Kinetic and Thermodynamic Growth Control of Au–Pd Core–Shell Nanoparticles

2018 ◽  
Vol 140 (37) ◽  
pp. 11680-11685 ◽  
Author(s):  
Shu Fen Tan ◽  
Geeta Bisht ◽  
Utkarsh Anand ◽  
Michel Bosman ◽  
Xin Ee Yong ◽  
...  
Keyword(s):  
Growth Control ◽  
Core Shell ◽  
Shell Nanoparticles ◽  
Core Shell Nanoparticles

In situ atomic-scale observation of monolayer graphene growth from SiC

Nano Research ◽  
2018 ◽  
Vol 11 (5) ◽  
pp. 2809-2820 ◽  
Author(s):  
Kaihao Yu ◽  
Wen Zhao ◽  
Xing Wu ◽  
Jianing Zhuang ◽  
Xiaohui Hu ◽  
...  
Keyword(s):  
Atomic Scale ◽  
Monolayer Graphene ◽  
Graphene Growth

In Situ CCVD Grown Graphene Transistors with Ultra-High On/Off-Current Ratio in Silicon CMOS Compatible Processing

2012 ◽  
Vol 77 ◽  
pp. 258-265 ◽  
Author(s):  
Pia Juliane Wessely ◽  
Frank Wessely ◽  
Emrah Birinci ◽  
Bernadette Riedinger ◽  
Udo Schwalke
Keyword(s):  
Field Effect Transistors ◽  
Chemical Vapor ◽  
Monolayer Graphene ◽  
Current Ratio ◽  
Electron Conduction ◽  
Graphene Layers ◽  
Cmos Compatible ◽  
Grown Graphene ◽  
Silicon Cmos

We invented a novel method to fabricate graphene transistors on oxidized silicon wafers without the need to transfer graphene layers. By means of catalytic chemical vapor deposition (CCVD) the in-situ grown monolayer graphene field-effect transistors (MoLGFETs) and bilayer graphene transistors (BiLGFETs) are realized directly on oxidized silicon substrate, whereby the number of stacked graphene layers is determined by the selected CCVD process parameters. In-situ grown MoLGFETs exhibit the expected Dirac point together with the typical low on/off-current ratios between 16 (hole conduction) and 8 (electron conduction), respectively. In contrast, our BiLGFETs possess unipolar p-type device characteristics with an extremely high on/off-current ratio up to 1E7 exceeding previously reported values by several orders of magnitude. We explain the improved device characteristics by a combination of effects, in particular graphene-substrate interactions, hydrogen doping and Schottky-barrier effects at the source/drain contacts as well. Besides the excellent device characteristics, the complete CCVD fabrication process is silicon CMOS compatible. This will allow the usage of BiLGFETs for digital applications in a hybrid silicon CMOS environment.

In situ metalorganic growth control of GaAlAs thick layers using 1.32 μm laser reflectometry

1995 ◽  
Vol 147 (3-4) ◽  
pp. 251-255 ◽  
Author(s):  
R. Kuszelewicz ◽  
Y. Rafflé ◽  
R. Azoulay ◽  
L. Dugrand ◽  
G. Le Roux
Keyword(s):  
Growth Control ◽  
Thick Layers ◽  
Laser Reflectometry

scholarly journals Reversible hydrogenation restores defected graphene to graphene

2021 ◽  
Author(s):  
Lin Jiang ◽  
Pauline M. G. van Deursen ◽  
Hadi Arjmandi-Tash ◽  
Liubov A. Belyaeva ◽  
Haoyuan Qi ◽  
...  
Keyword(s):  
Carrier Mobility ◽  
Protective Layer ◽  
Monolayer Graphene ◽  
Pristine Graphene ◽  
Graphene Surface ◽  
Hydrogenated Graphene ◽  
Hydrocarbon Molecules ◽  
Cleaning Protocol ◽  
Hydrogenation Treatment

AbstractGraphene as a two-dimensional material is prone to hydrocarbon contaminations, which can significantly alter its intrinsic electrical properties. Herein, we implement a facile hydrogenation-dehydrogenation strategy to remove hydrocarbon contaminations and preserve the excellent transport properties of monolayer graphene. Using electron microscopy we quantitatively characterized the improved cleanness of hydrogenated graphene compared to untreated samples. In situ spectroscopic investigations revealed that the hydrogenation treatment promoted the adsorption ofytyt water at the graphene surface, resulting in a protective layer against the re-deposition of hydrocarbon molecules. Additionally, the further dehydrogenation of hydrogenated graphene rendered a more pristine-like basal plane with improved carrier mobility compared to untreated pristine graphene. Our findings provide a practical post-growth cleaning protocol for graphene with maintained surface cleanness and lattice integrity to systematically carry a range of surface chemistry in the form of a well-performing and reproducible transistor.

Effects of Water Depth on Algae Control in Stratified Reservoirs Using In Situ Water-Lifting Aeration Technology

2013 ◽  
Vol 663 ◽  
pp. 977-981 ◽  
Author(s):  
Xin Sun ◽  
Wei Li Zhao ◽  
Ting Lin Huang
Keyword(s):  
Water Depth ◽  
Growth Control ◽  
Stable State ◽  
Algal Growth ◽  
Control Zone ◽  
Proper Design ◽  
Fluent Software ◽  
Flow Domain ◽  
Algae Control

Flow outside the water-lifting aerator was simulated with FLUENT software, and the effects of water depth on the in-situ algal growth control using water-lifting aeration technology was numerically analyzed. Under stable state of flow outside the water-lifting aerator, the clockwise flow near the inlet and counter-clockwise flow in other domains coexisted, flow velocity decreased as the distance from the water-lifting aerator increased. When the water depth was increased from 50 m to 110 m, the radius of the core algal growth control zone increased from 60 m to 175 m, and the ratio of the algal growth control zone to the whole flow domain increased from 12.5% to 30.6%. The proper design intervals of water-lifting aerators in reservoirs were proposed as 1.2-1.6 times of water depth.

Sign in / Sign up

Export Citation Format

Share Document