Characterization of CMOS Process Variations by Measuring Subthreshold Current

Author(s):  
Aleksandra Pavasović ◽  
Andreas G. Andreou ◽  
Charles R. Westgate
Author(s):  
Matthias L. Vermeer ◽  
Raymond J. E. Hueting ◽  
Luca Pirro ◽  
Jan Hoentschel ◽  
Jurriaan Schmitz

2005 ◽  
Vol 15 (02) ◽  
pp. 459-476
Author(s):  
C. PATRICK YUE ◽  
JAEJIN PARK ◽  
RUIFENG SUN ◽  
L. RICK CARLEY ◽  
FRANK O'MAHONY

This paper presents the low-power circuit techniques suitable for high-speed digital parallel interfaces each operating at over 10 Gbps. One potential application for such high-performance I/Os is the interface between the channel IC and the magnetic read head in future compact hard disk systems. First, a crosstalk cancellation technique using a novel data encoding scheme is introduced to suppress electromagnetic interference (EMI) generated by the adjacent parallel I/Os . This technique is implemented utilizing a novel 8-4-PAM signaling with a data look-ahead algorithm. The key circuit components in the high-speed interface transceiver including the receive sampler, the phase interpolator, and the transmitter output driver are described in detail. Designed in a 0.13-μm digital CMOS process, the transceiver consumes 310 mW per 10-Gps channel from a I-V supply based on simulation results. Next, a 20-Gbps continuous-time adaptive passive equalizer utilizing on-chip lumped RLC components is described. Passive equalizers offer the advantages of higher bandwidth and lower power consumption compared with conventional designs using active filter. A low-power, continuous-time servo loop is designed to automatically adjust the equalizer frequency response for the optimal gain compensation. The equalizer not only adapts to different channel characteristics, but also accommodates temperature and process variations. Implemented in a 0.25-μm, 1P6M BiCMOS process, the equalizer can compensate up to 20 dB of loss at 10 GHz while only consumes 32 mW from a 2.5-V supply.


1996 ◽  
Vol 74 (S1) ◽  
pp. 151-155
Author(s):  
J. M. Chen ◽  
M. Parameswaran ◽  
M. Paranjape

This paper presents experimental results on the piezoresistance characterization of gate polysilicon available from two commercial CMOS processes. It is shown that the gate polysilicon is very strain-sensitive, and a gauge factor of about 25 can be readily achieved. This value can allow standard gate polysilicon to be used as a strain-sensing element for integrated microsensor applications. As an example, a sub-nanogram mass sensor was fabricated using commercially available CMOS technology and is presented. The device incorporates gate polysilicon of the CMOS process as the sensing material, and is subjected to low levels of strain in order to measure small masses (< 10−9 g). A potential application for this sensor is to monitor the growth of biological cell cultures in a liquid environment.


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