LOW-POWER, PARALLEL INTERFACE WITH CONTINUOUS-TIME ADAPTIVE PASSIVE EQUALIZER AND CROSSTALK CANCELLATION

2005 ◽  
Vol 15 (02) ◽  
pp. 459-476
Author(s):  
C. PATRICK YUE ◽  
JAEJIN PARK ◽  
RUIFENG SUN ◽  
L. RICK CARLEY ◽  
FRANK O'MAHONY
Keyword(s):  
Low Power ◽  
Electromagnetic Interference ◽  
Continuous Time ◽  
High Speed ◽  
High Performance ◽  
Process Variations ◽  
Cmos Process ◽  
Power Circuit ◽  
Crosstalk Cancellation ◽  
Circuit Components

This paper presents the low-power circuit techniques suitable for high-speed digital parallel interfaces each operating at over 10 Gbps. One potential application for such high-performance I/Os is the interface between the channel IC and the magnetic read head in future compact hard disk systems. First, a crosstalk cancellation technique using a novel data encoding scheme is introduced to suppress electromagnetic interference (EMI) generated by the adjacent parallel I/Os . This technique is implemented utilizing a novel 8-4-PAM signaling with a data look-ahead algorithm. The key circuit components in the high-speed interface transceiver including the receive sampler, the phase interpolator, and the transmitter output driver are described in detail. Designed in a 0.13-μm digital CMOS process, the transceiver consumes 310 mW per 10-Gps channel from a I-V supply based on simulation results. Next, a 20-Gbps continuous-time adaptive passive equalizer utilizing on-chip lumped RLC components is described. Passive equalizers offer the advantages of higher bandwidth and lower power consumption compared with conventional designs using active filter. A low-power, continuous-time servo loop is designed to automatically adjust the equalizer frequency response for the optimal gain compensation. The equalizer not only adapts to different channel characteristics, but also accommodates temperature and process variations. Implemented in a 0.25-μm, 1P6M BiCMOS process, the equalizer can compensate up to 20 dB of loss at 10 GHz while only consumes 32 mW from a 2.5-V supply.

A LOW POWER HIGH RESOLUTION ROIC DESIGN WITH 14-BIT COLUMN-LEVEL ADC FOR 384 × 288 IRFPA

2013 ◽  
Vol 22 (09) ◽  
pp. 1340015 ◽  
Author(s):  
YAJING ZHANG ◽  
WENGAO LU ◽  
GUANNAN WANG ◽  
ZHONGJIAN CHEN ◽  
YACONG ZHANG
Keyword(s):  
High Resolution ◽  
Low Power ◽  
Integrated Circuit ◽  
High Speed ◽  
High Performance ◽  
Low Noise ◽  
Cmos Process ◽  
Readout Integrated Circuit ◽  
Analog To Digital Conversion ◽  
Amplifier Design

A readout integrated circuit (ROIC) of infrared focal plane array (IRFPA) with low power and low noise is presented in this paper. It consists of a 384 × 288 pixel array and column-level A/D conversion circuits. The proposed system has high resolution because of the odd–even Analog to Digital Conversion (ADC) structure, containing correlated switches design, multi-Vth amplifier design and high speed high resolution comparator design including latch-stage. Designed and simulated in 0.35-μm CMOS process, this high performance ROIC achieves 81.24 dB SNR at 8.64 KS/s consuming 98 mW under 5 V voltage supply, resulting in an ENOB of 13.2-bit.

scholarly journals Low Power Continuous-Time Delta-Sigma Modulators Using the Three Stage OTA and Dynamic Comparator

2018 ◽  
Vol 7 (2.16) ◽  
pp. 38
Author(s):  
Anshu Gupta ◽  
Lalita Gupta ◽  
R K. Baghel
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
Continuous Time ◽  
High Speed ◽  
Second Order ◽  
Cmos Process ◽  
Sigma Delta Modulator ◽  
Dynamic Comparator ◽  
Sigma Delta ◽  
Delta Sigma

A second-order sigma delta modulator that uses an operational transconductance amplifier as integrator and latch comparator as quantizer. The proposed technique where a low power high gain OTA is used as integrator and another circuit called dynamic latch comparator with two tail transistors and two controlling switches are used to achieve high speed, low power and high resolution in second order delta sigma modulator. It enhances the power efficiency and compactness of the modulator by implementing these blocks as sub modules. A second order modulator has been designed to justify the effectiveness of the proposed design. Technology 180nm CMOS process is used to implement complete second order continuous time sigma delta modulator.  We introduce the sub threshold three stage OTA, which is a way of achieving low distortion operation with input referred noise at 1 KHz is equal to the 2.2647pV/   and with low power consumption of 296.72nW.  A high-speed, low-voltage and a low-power Double-Tail dynamic comparator is also proposed. The proposed structure is contrasted with past dynamic comparators. In this paper, the comparator’s delay will be investigated and systematic analysis are inferred. a novel comparator using two tail transistor is proposed, here circuitry of a customized comparator having two tail is changed for low power dissipation and also it operates fast at little supply voltages. By maintaining the outline and by including couple of transistors, during the regeneration strengthening of positive feedback can be maintained, this results in amazingly diminished delay parameter. It is investigated that in proposed design structure of comparator using two tail transistors, power consumption is reduced and delay time is also diminished to a great extent. The proposed comparator is having maximum clock frequency that is possibly expanded up to 1GHz at voltages of 1 V whereas it is dissipating 10.99 µW of power, individually. By using sub threshold three stage OTA and dynamic standard two tail latch comparator, designed second order sigma delta ADC will consume 29.95µW of power.

scholarly journals A 6-bit Low-Power High-Speed Flash ADC using 180 nm CMOS process

2014 ◽  
Vol 17 (1) ◽  
pp. 52-61
Author(s):  
Thanh Tri Vo ◽  
Trong Tu Bui ◽  
Duc Hung Le ◽  
Cong Kha Pham
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
High Speed ◽  
High Performance ◽  
Sampling Rate ◽  
Low Power Consumption ◽  
Cmos Process ◽  
Flash Adc ◽  
High Sampling Rate ◽  
Simulation Results

In this paper we present a design of Flash-ADC that can achieve high performance and low power consumption. By using the Double Sampling Rate technique and a new comparator topology with low kick-back noise, this design can achieve high sampling rate while still consuming low power. The design is implemented in a 0.18 m CMOS process. The simulation results show that this design can work at 400 MSps and power consumption is only 16.24 mW. The DNL and INL are 0.15 LSB and 0.6 LSB, respectively.

Performance Analysis of Various Multipliers Using 8T-full Adder with 180nm Technology

2020 ◽  
Vol 13 (6) ◽  
pp. 864-870
Author(s):  
Sai Venkatramana Prasada G.S ◽  
G. Seshikala ◽  
S. Niranjana
Keyword(s):  
Low Power ◽  
Power Dissipation ◽  
High Speed ◽  
High Performance ◽  
Full Adder ◽  
Fundamental Operation ◽  
Wallace Tree ◽  
Power Delay Product ◽  
The Comparative Study ◽  
Wallace Tree Multiplier

Background: This paper presents the comparative study of power dissipation, delay and power delay product (PDP) of different full adders and multiplier designs. Methods: Full adder is the fundamental operation for any processors, DSP architectures and VLSI systems. Here ten different full adder structures were analyzed for their best performance using a Mentor Graphics tool with 180nm technology. Results: From the analysis result high performance full adder is extracted for further higher level designs. 8T full adder exhibits high speed, low power delay and low power delay product and hence it is considered to construct four different multiplier designs, such as Array multiplier, Baugh Wooley multiplier, Braun multiplier and Wallace Tree multiplier. These different structures of multipliers were designed using 8T full adder and simulated using Mentor Graphics tool in a constant W/L aspect ratio. Conclusion: From the analysis, it is concluded that Wallace Tree multiplier is the high speed multiplier but dissipates comparatively high power. Baugh Wooley multiplier dissipates less power but exhibits more time delay and low PDP.

scholarly journals Ultracompact and low-power-consumption silicon thermo-optic switch for high-speed data

Nanophotonics ◽  
2020 ◽  
Vol 10 (2) ◽  
pp. 937-945
Author(s):  
Ruihuan Zhang ◽  
Yu He ◽  
Yong Zhang ◽  
Shaohua An ◽  
Qingming Zhu ◽  
...  
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
High Speed ◽  
High Performance ◽  
Pulse Amplitude ◽  
Telecommunication Networks ◽  
Low Power Consumption ◽  
Power Efficient ◽  
High Speed Data ◽  
On Chip

AbstractUltracompact and low-power-consumption optical switches are desired for high-performance telecommunication networks and data centers. Here, we demonstrate an on-chip power-efficient 2 × 2 thermo-optic switch unit by using a suspended photonic crystal nanobeam structure. A submilliwatt switching power of 0.15 mW is obtained with a tuning efficiency of 7.71 nm/mW in a compact footprint of 60 μm × 16 μm. The bandwidth of the switch is properly designed for a four-level pulse amplitude modulation signal with a 124 Gb/s raw data rate. To the best of our knowledge, the proposed switch is the most power-efficient resonator-based thermo-optic switch unit with the highest tuning efficiency and data ever reported.

scholarly journals A Low-Power 12-Bit 20 MS/s Asynchronously Controlled SAR ADC for WAVE ITS Sensor Based Applications

Sensors ◽  
2021 ◽  
Vol 21 (7) ◽  
pp. 2260
Author(s):  
Khuram Shehzad ◽  
Deeksha Verma ◽  
Danial Khan ◽  
Qurat Ul Ain ◽  
Muhammad Basim ◽  
...  
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
High Speed ◽  
Intelligent Transportation System ◽  
Cmos Process ◽  
Process Technology ◽  
Back Issue ◽  
Digital To Analog Converter ◽  
Analog To Digital ◽  
Switching Method

A low power 12-bit, 20 MS/s asynchronously controlled successive approximation register (SAR) analog-to-digital converter (ADC) to be used in wireless access for vehicular environment (WAVE) intelligent transportation system (ITS) sensor based application is presented in this paper. To optimize the architecture with respect to power consumption and performance, several techniques are proposed. A switching method which employs the common mode charge recovery (CMCR) switching process is presented for capacitive digital-to-analog converter (CDAC) part to lower the switching energy. The switching technique proposed in our work consumes 56.3% less energy in comparison with conventional CMCR switching method. For high speed operation with low power consumption and to overcome the kick back issue in the comparator part, a mutated dynamic-latch comparator with cascode is implemented. In addition, to optimize the flexibility relating to the performance of logic part, an asynchronous topology is employed. The structure is fabricated in 65 nm CMOS process technology with an active area of 0.14 mm2. With a sampling frequency of 20 MS/s, the proposed architecture attains signal-to-noise distortion ratio (SNDR) of 65.44 dB at Nyquist frequency while consuming only 472.2 µW with 1 V power supply.

Development of high k/III-V (InGaAs, InAs, InSb) structures for future low power, high speed device applications

2013 ◽  
Vol 1538 ◽  
pp. 291-302
Author(s):  
Edward Yi Chang ◽  
Hai-Dang Trinh ◽  
Yueh-Chin Lin ◽  
Hiroshi Iwai ◽  
Yen-Ku Lin
Keyword(s):  
Low Power ◽  
Leakage Current ◽  
High Speed ◽  
High Performance ◽  
Gate Oxide ◽  
Chemical Cleaning ◽  
Low Leakage ◽  
Low Leakage Current ◽  
High K ◽  
Cleaning Methods

ABSTRACTIII-V compounds such as InGaAs, InAs, InSb have great potential for future low power high speed devices (such as MOSFETs, QWFETs, TFETs and NWFETs) application due to their high carrier mobility and drift velocity. The development of good quality high k gate oxide as well as high k/III-V interfaces is prerequisite to realize high performance working devices. Besides, the downscaling of the gate oxide into sub-nanometer while maintaining appropriate low gate leakage current is also needed. The lack of high quality III-V native oxides has obstructed the development of implementing III-V based devices on Si template. In this presentation, we will discuss our efforts to improve high k/III-V interfaces as well as high k oxide quality by using chemical cleaning methods including chemical solutions, precursors and high temperature gas treatments. The electrical properties of high k/InSb, InGaAs, InSb structures and their dependence on the thermal processes are also discussed. Finally, we will present the downscaling of the gate oxide into sub-nanometer scale while maintaining low leakage current and a good high k/III-V interface quality.

Design and Layout of a High-Performance PWM Control Class D Amplifiers IC Systems

2012 ◽  
Vol 203 ◽  
pp. 469-473
Author(s):  
Ruei Chang Chen ◽  
Shih Fong Lee
Keyword(s):  
Low Power ◽  
High Performance ◽  
Low Voltage ◽  
Design Flow ◽  
Total Power ◽  
Cmos Process ◽  
Low Power Circuits ◽  
Class D ◽  
Total Power Consumption ◽  
Power Circuits

This paper presents the design and implementation of a novel pulse width modulation control class D amplifiers chip. With high-performance, low-voltage, low-power and small area, these circuits are employed in portable electronic systems, such as the low-power circuits, wireless communication and high-frequency circuit systems. This class D chip followed the chip implementation center advanced design flow, and then was fabricated using Taiwan Semiconductor Manufacture Company 0.35-μm 2P4M mixed-signal CMOS process. The chip supply voltage is 3.3 V which can operate at a maximum frequency of 100 MHz. The total power consumption is 2.8307 mW, and the chip area size is 1.1497×1.1497 mm2. Finally, the class D chip was tested and the experimental results are discussed. From the excellent performance of the chip verified that it can be applied to audio amplifiers, low-power circuits, etc.

Seek-method based 2’s complement circuit for low power circuit and high-speed operation

2021 ◽  
Author(s):  
S. Deepak ◽  
Ganesan. SaiKrishnan ◽  
D. Rajesh ◽  
J. V. R. Ravindra
Keyword(s):  
Low Power ◽  
High Speed ◽  
Power Circuit

scholarly journals A HIGH-PERFORMANCE AND LOW-POWER DELAY BUFFER

2013 ◽  
pp. 78-82
Author(s):  
GOPALA KRISHNA.M ◽  
UMA SANKAR.CH ◽  
NEELIMA. S ◽  
KOTESWARA RAO.P
Keyword(s):  
Power Consumption ◽  
Low Power ◽  
High Speed ◽  
High Performance ◽  
Vlsi Design ◽  
Flip Flop ◽  
Ring Counter ◽  
Double Edge ◽  
Low Power Cmos ◽  
Cmos Vlsi

In this paper, presents circuit design of a low-power delay buffer. The proposed delay buffer uses several new techniques to reduce its power consumption. Since delay buffers are accessed sequentially, it adopts a ring-counter addressing scheme. In the ring counter, double-edge-triggered (DET) flip-flops are utilized to reduce the operating frequency by half and the C-element gated-clock strategy is proposed. Both total transistor count and the number of clocked transistors are significantly reduced to improve power consumption and speed in the flip-flop. The number of transistors is reduced by 56%-60% and the Area-Speed-Power product is reduced by 56%-63% compared to other double edge triggered flip-flops. This design is suitable for high-speed, low-power CMOS VLSI design applications.

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