Formal Verification of Distributed Task Migration for Thermal Management in On-Chip Multi-core Systems Using nuXmv

Author(s):  
Syed Ali Asadullah Bukhari ◽  
Faiq Khalid Lodhi ◽  
Osman Hasan ◽  
Muhammad Shafique ◽  
Jörg Henkel
Electronics ◽  
2020 ◽  
Vol 9 (2) ◽  
pp. 346 ◽  
Author(s):  
Lili Shen ◽  
Ning Wu ◽  
Gaizhen Yan

By using through-silicon-vias (TSV), three dimension integration technology can stack large memory on the top of cores as a last-level on-chip cache (LLC) to reduce off-chip memory access and enhance system performance. However, the integration of more on-chip caches increases chip power density, which might lead to temperature-related issues in power consumption, reliability, cooling cost, and performance. An effective thermal management scheme is required to ensure the performance and reliability of the system. In this study, a fuzzy-based thermal management scheme (FBTM) is proposed that simultaneously considers cores and stacked caches. The proposed method combines a dynamic cache reconfiguration scheme with a fuzzy-based control policy in a temperature-aware manner. The dynamic cache reconfiguration scheme determines the size of the cache for the processor core according to the application that reaches a substantial amount of power consumption savings. The fuzzy-based control policy is used to change the frequency level of the processor core based on dynamic cache reconfiguration, a process which can further improve the system performance. Experiments show that, compared with other thermal management schemes, the proposed FBTM can achieve, on average, 3 degrees of reduction in temperature and a 41% reduction of leakage energy.


Author(s):  
Aleš Chvála ◽  
Robert Szobolovszký ◽  
Jaroslav Kováč ◽  
Martin Florovič ◽  
Juraj Marek ◽  
...  

In this paper, several methods suitable for real time on-chip temperature measurements of power AlGaN/GaN based high-electron mobility transistor (HEMT) grown on SiC substrate are presented. The measurement of temperature distribution on HEMT surface using Raman spectroscopy is presented. We have deployed a temperature measurement approach utilizing electrical I-V characteristics of the neighboring Schottky diode under different dissipated power of the transistor heat source. These methods are verified by measurements with micro thermistors. The results show that these methods have a potential for HEMT analysis in thermal management. The features and limitations of the proposed methods are discussed. The thermal parameters of materials used in the device are extracted from temperature distribution in the structure with the support of 3-D device thermal simulation. The thermal analysis of the multifinger power HEMT is performed. The effects of the structure design and fabrication processes from semiconductor layers, metallization, and packaging up to cooling solutions are investigated. The analysis of thermal behavior can help during design and optimization of power HEMT.


Author(s):  
Tim Wegner ◽  
Martin Gag ◽  
Dirk Timmermann

With the progress of deep submicron technology, power consumption and temperature-related issues have become dominant factors for chip design. Therefore, very large-scale integrated systems like Systems-on-Chip (SoCs) are exposed to an increasing thermal stress. On the one hand, this necessitates effective mechanisms for thermal management and task mapping. On the other hand, application of according thermal-aware approaches is accompanied by disturbance of system integrity and degradation of system performance. In this chapter, a method to predict and proactively manage the on-chip temperature distribution of systems based on Networks-on-Chip (NoCs) is proposed. Thereby, traditional reactive approaches for thermal management and task mapping can be replaced. This results in shorter response times for the application of management measures and therefore in a reduction of temperature and thermal imbalances and causes less impairment of system performance. The systematic analysis of simulations conducted for NoC sizes up to 4x4 proves that under certain conditions the proactive approach is able to mitigate the negative impact of thermal management on system performance while still improving the on-chip temperature profile. Similar effects can be observed for proactive thermal-aware task mapping at system runtime allowing for the consideration of prospective thermal conditions during the mapping process.


2012 ◽  
Vol 2012 (1) ◽  
pp. 000254-000267 ◽  
Author(s):  
John Y. Xie ◽  
Hong Shi ◽  
Yuan Li ◽  
Zhe Li ◽  
Arif Rahman ◽  
...  

3D IC is the viable revolutionary technology that will enable system-level integration, miniaturization, optimal power management, increased data bandwidth, and eventually reduced system cost. Like any breakthrough technologies, it faces many challenges. Design methodology, integration technology, manufacturing process and new industrial ecosystem are the areas of focus. This paper will discuss these challenges and Altera's 3D integration development effort. 2.5D is an intermediate path to true 3D IC using silicon interposer and TSV (Through-Si-Via) stacking. The 2.5D stacking configuration offers different form factor, interconnect path, and thermal management options than monolithic packages, which could help to reduce system level power and thermal management pressure. It offers silicon level interconnect density, low inductive path and wide IO application. However, it's power delivery system (PDN) could be the bottleneck for the system to perform at the intended bandwidth and speed. Thus, the whole system, IC-Interposer-Package-PCB, must be considered holistically, and trade off study and compensation mechanism development are needed in such complex system level integration. There are many different 2.5D integration manufacturing flows currently under development. They can be categorized into two major flow options: Attaching interposer to substrate first, which can be called CoCoS (Chip on Chip on Substrate); or attaching device silicon to interposer first, which is also called CoWoS (Chip on Wafer on Substrate). The major challenges are in the areas of manufacturing process window and yield, thin wafer handling, testability and overall cost of the integration process. ,). This paper will discuss design consideration, manufacturability analysis, Logic/memory devices and silicon interposer interaction, and thermal management to enable the 2.5D integration. System level characterization and correlation with simulations are performed. The challenge of new supply-customer model and industrial ecosystem development associated with 2.5D integration will also be discussed.


2010 ◽  
Vol 20 (8) ◽  
pp. 089801 ◽  
Author(s):  
Shankar Narayanan ◽  
Andrei G Fedorov ◽  
Yogendra K Joshi
Keyword(s):  

2010 ◽  
Vol 20 (7) ◽  
pp. 075010 ◽  
Author(s):  
Shankar Narayanan ◽  
Andrei G Fedorov ◽  
Yogendra K Joshi
Keyword(s):  

Author(s):  
Johanna Sepulveda ◽  
Damian Aboul-Hassan ◽  
Georg Sigl ◽  
Bernd Becker ◽  
Matthias Sauer

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