Relaxation Processes in Glasses at Low Temperature

1986 ◽  
pp. 227-243
Author(s):  
H. P. H. Thijssen ◽  
R. van den Berg ◽  
S. Völker
Keyword(s):  
Low Temperature ◽  
Relaxation Processes

DYNAMICS OF THE LOW TEMPERATURE GLASS-LIKE PHASE IN MANGANITES

2003 ◽  
Vol 17 (04n06) ◽  
pp. 842-847
Author(s):  
C. CASTELLANO ◽  
F. CORDERO ◽  
R. CANTELLI ◽  
M. FERRETTI
Keyword(s):  
Distribution Function ◽  
Phase Transitions ◽  
Quantitative Analysis ◽  
Low Temperature ◽  
Imaginary Part ◽  
Lattice Relaxation ◽  
Relaxation Processes ◽  
Temperature Dependent ◽  
Energy Barriers ◽  
Nanostructured State

We report anelastic spectroscopy measurements of La 1-x Ca x MnO 3 performed in order to better characterize the nature of the phase transitions and microscopic lattice relaxation processes present in these materials. A peak in the imaginary part of the elastic susceptibility presents a behaviour typical of inhomogeneous and glass-like systems. We have performed a quantitative analysis calculating the temperature dependent distribution function of the energy barriers of the fluctuations characterizing this nanostructured state.

Characteristic Relaxation Times of Low-temperature Semiconductor Breakdown Kinetics

1989 ◽  
Vol 44 (7) ◽  
pp. 629-632 ◽  
Author(s):  
J. Peinke ◽  
J. Parisi ◽  
U. Rau ◽  
W. Clauß ◽  
M. Weise
Keyword(s):  
Low Temperature ◽  
Characteristic Time ◽  
Relaxation Times ◽  
System Response ◽  
Relaxation Processes ◽  
Nonlinear Transport ◽  
Response Behavior ◽  
Slowing Down ◽  
Critical Phase ◽  
Spatio Temporal

The nonlinear transport behavior during low-temperature avalanche breakdown of extrinsic germanium is associated with the self-generated formation of spatio-temporal current structures. Very close to the critical phase transition between different conducting states, the underlying physical relaxation processes develop on relatively slow macroscopic time scales in the ms range. We have evaluated the slowing down of the characteristic time constants from independent measurements of the system response behavior to external pulsed excitations.

Calorimetric Investigation of Relaxation Processes in Disordered Semiconductors

1996 ◽  
Vol 420 ◽  
Author(s):  
B. G. Budaguan ◽  
A. A. Aivazov ◽  
A. Yu. Sazonov
Keyword(s):  
Porous Silicon ◽  
Low Temperature ◽  
Electrochemical Etching ◽  
Structural Rearrangement ◽  
Endothermic Effect ◽  
Relaxation Processes ◽  
Exothermic Effect ◽  
Scanning Calorimetry ◽  
Si Substrates ◽  
Dsc Measurements

AbstractThe comparative study of relaxation processes in amorphous hydrogenated (a- Si:H) and porous silicon (PS) by use of differential scanning calorimetry (DSC) measurements is presented. Films of a-Si:H were deposited by RF glow discharge of two gas mixtures (10% SiH4+ 90% H2) and (5% SiH4 + 95% He). PS films have been prepared by electrochemical etching of 1Ω-cm (p- PS) and of 0.01Ω-cm (p+ PS) ptype Si substrates. The DSC traces were recorded during the heating of samples at a constant rate of 10°C/min from 20 to 5700C in an Ar atmosphere. All investigated samples present a low temperature exothermic effect with a maxima within 120-2800C. At higher temperatures (T>3000C) a second exothermic effect is observed for a-Si:H films prepared from both hydrogen and helium diluted silane mixtures while two endothermic effects are observed for PS samples. Analysis of the low temperature exothermic effects has been performed, and focussed on the relaxation of weak Si-Si bonds which are the features of both amorphous hydrogenated and porous silicon. It was shown that the endothermic effect connected with hydrogen effusion from PS at higher temperatures is compensated by exothermic structural rearrangement in the case of a-Si:H.

Near-infrared and visible luminescence and absorption spectroscopy of low-coordinate organometallic rhenium compounds

1996 ◽  
Vol 74 (1) ◽  
pp. 28-31
Author(s):  
Carole Savoie ◽  
Christian Reber
Keyword(s):  
Low Temperature ◽  
Near Infrared ◽  
Organic Ligands ◽  
Luminescence Spectra ◽  
Relaxation Processes ◽  
Nonradiative Relaxation ◽  
Visible Luminescence ◽  
Infrared Spectral ◽  
Absorption And Luminescence Spectra ◽  
Stokes Shifts

Low-temperature absorption and luminescence spectra of four organorhenium compounds were measured in the visible and near-infrared spectral regions. Effects of the temperature, formal oxidation state, and the oxo-, bromo-, and organic ligands on the metal center are reported. The emission maxima of the four compounds show a large variation between 9000 and 14 200 cm−1. Stokes shifts show a smaller variation from 3700 to 4200 cm−1. Luminescence intensities are used to qualitatively characterize nonradiative relaxation processes. Key words: luminescence spectra, absorption spectra, organorhenium compounds.

Apparatus for studying relaxation processes in a low-temperature plasma by the photon counting method

1989 ◽  
Vol 32 (1) ◽  
pp. 39-41
Author(s):  
V. S. Osadchuk ◽  
A. F. Sergienko ◽  
V. I. Revenok ◽  
V. A. Gerasimchuk ◽  
I. I. Sukhobrus
Keyword(s):  
Low Temperature ◽  
Photon Counting ◽  
Relaxation Processes ◽  
Low Temperature Plasma ◽  
Counting Method ◽  
Temperature Plasma ◽  
Photon Counting Method

scholarly journals Релаксация тока в монокристаллах TlGa-=SUB=-1-x-=/SUB=-Dy-=SUB=-x-=/SUB=-Se-=SUB=-2-=/SUB=- (x=0.01; 0.03)

2020 ◽  
Vol 62 (7) ◽  
pp. 1022
Author(s):  
С.Н. Мустафаева ◽  
К.М. Гусейнова ◽  
М.М. Асадов
Keyword(s):  
Low Temperature ◽  
Flight Time ◽  
Charge Carriers ◽  
Physical Parameters ◽  
Relaxation Processes ◽  
Carrier Injection ◽  
Contact Charging ◽  
Deep Traps ◽  
Effective Mobility ◽  
Temperature Relaxation

Abstract The low-temperature relaxation processes in TlGa_1 – _ x Dy_ x Se_2 ( x = 0.01, 0.03) single crystals have been studied experimentally. The physical parameters which characterize the electron processes in Ag–TlGa_1 – _ x Dy_ x Se_2–Ag samples have been determined using the estafette transfer mechanism of the charge formed at deep traps due to the carrier injection from a contact: the effective mobility of the charge transferred due to deep centers, the sample contact capacity, the region of accumulation of the charge in the samples, the contact charging constant, and the flight time of charge carriers through the sample.

Low-Temperature Dislocation Relaxation Processes in Niobium of Different Purity

1995 ◽  
Vol 97-98 ◽  
pp. 473-478
Author(s):  
P.P. Pal-Val ◽  
V.D. Natsik ◽  
L.N. Pal-Val
Keyword(s):  
Low Temperature ◽  
Relaxation Processes

Phonon relaxation processes in crystals (NaNO3) at high pressure and low temperature

1994 ◽  
Vol 101 (5) ◽  
pp. 3436-3443 ◽  
Author(s):  
M. Jordan ◽  
A. Schuch ◽  
R. Righini ◽  
G. F. Signorini ◽  
H.‐J. Jodl
Keyword(s):  
High Pressure ◽  
Low Temperature ◽  
Relaxation Processes
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