The effect of an applied electric field on the oxidation of aluminum in the temperature range 50?400�C

1970 ◽  
Vol 2 (4) ◽  
pp. 361-371 ◽  
Author(s):  
G. L. Hunt ◽  
I. M. Ritchie
2004 ◽  
Vol 18 (14) ◽  
pp. 697-705
Author(s):  
HUI LI ◽  
JUNFENG WANG ◽  
RUI XIONG ◽  
FAN YI ◽  
WUFENG TANG ◽  
...  

We investigated the response of K 0.3 MoO 3 to high dc electric field in a large temperature range 14–95 K. The remarkable switching from insulating to highly conducting state was observed at 14–75 K. The second threshold field for the switching takes a minimum value at around 50 K. In the highly conducting state, the conductance displays a novel linear correlation to the applied electric field. We also compared the I–E characteristic obtained in the constant-voltage condition and the constant-current condition, which show distinct differential resistances.


2000 ◽  
Vol 623 ◽  
Author(s):  
P.C. Joshi ◽  
M.W. Cole

AbstractWe report on the properties of Ta2O5 thin films prepared by the metalorganic solution deposition (MOSD) technique on Pt-coated Si, n+-Si, and poly-Si substrates. The effects of postdeposition annealing temperature on the structural, electrical, and optical properties were analyzed. The electrical measurements were conducted on MIM and MIS capacitors. The dielectric constant of amorphous Ta2O5 thin films was in the range 29.2-29.5 up to 600°C, while crystalline thin films, annealed in the temperature range 650–750°C, exhibited enhanced dielectric constant in the range 45.6–51.7. The dielectric loss factor did not show any appreciable dependence on the annealing temperature and was in the range 0.006–0.009. The films exhibited high resistivities of the order of 1012–1015 Δ-cm at an applied electric field of 1 MV/cm in the annealing temperature range of 500-750 °C. The temperature coefficient of capacitance was in the range 52-114 ppm/°C for films annealed in the temperature range 500-750°C. The bias stability of capacitance, measured at an applied electric field of 1 MV/cm, was better than 1.41 % for Ta2O5 films annealed up to 750°C.


1972 ◽  
Vol 33 (C1) ◽  
pp. C1-63-C1-67 ◽  
Author(s):  
M. BERTOLOTTI ◽  
B. DAINO ◽  
P. Di PORTO ◽  
F. SCUDIERI ◽  
D. SETTE

2012 ◽  
Vol 15 (2-3) ◽  
pp. 127-139
Author(s):  
Tung Tran Anh ◽  
Laurent Berquez ◽  
Laurent Boudou ◽  
Juan Martinez-Vega ◽  
Alain Lacarnoy

2008 ◽  
Vol 75 (1) ◽  
Author(s):  
Q. Li ◽  
Y. H. Chen

A semi-permeable interface crack in infinite elastic dielectric/piezoelectric bimaterials under combined electric and mechanical loading is studied by using the Stroh complex variable theory. Attention is focused on the influence induced from the permittivity of the medium inside the crack gap on the near-tip singularity and on the energy release rate (ERR). Thirty five kinds of such bimaterials are considered, which are constructed by five kinds of elastic dielectrics and seven kinds of piezoelectrics, respectively. Numerical results for the interface crack tip singularities are calculated. We demonstrate that, whatever the dielectric phase is much softer or much harder than the piezoelectric phase, the structure of the singular field near the semi-permeable interface crack tip in such bimaterials always consists of the singularity r−1∕2 and a pair of oscillatory singularities r−1∕2±iε. Calculated values of the oscillatory index ε for the 35 kinds of bimaterials are presented in tables, which are always within the range between 0.046 and 0.088. Energy analyses for five kinds of such bimaterials constructed by PZT-4 and the five kinds of elastic dielectrics are studied in more detail under four different cases: (i) the crack is electrically conducting, (ii) the crack gap is filled with air/vacuum, (iii) the crack gap is filled with silicon oil, and (iv) the crack is electrically impermeable. Detailed comparisons on the variable tendencies of the crack tip ERR against the applied electric field are given under some practical electromechanical loading levels. We conclude that the different values of the permittivity have no influence on the crack tip singularity but have significant influences on the crack tip ERR. We also conclude that the previous investigations under the impermeable crack model are incorrect since the results of the ERR for the impermeable crack show significant discrepancies from those for the semi-permeable crack, whereas the previous investigations under the conducting crack model may be accepted in a tolerant way since the results of the ERR show very small discrepancies from those for the semi-permeable crack, especially when the crack gap is filled with silicon oil. In all cases under consideration the curves of the ERR for silicon oil are more likely tending to those for the conducting crack rather than to those for air or vacuum. Finally, we conclude that the variable tendencies of the ERR against the applied electric field have an interesting load-dependent feature when the applied mechanical loading increases. This feature is due to the nonlinear relation between the normal electric displacement component and the applied electromechanical loadings from a quadratic equation.


The Analyst ◽  
2020 ◽  
Vol 145 (6) ◽  
pp. 2412-2419 ◽  
Author(s):  
Rachel N. Deraney ◽  
Lindsay Schneider ◽  
Anubhav Tripathi

NA extraction and purification utilitzing a microfluidic chip with applied electric field to induce electroosmotic flow opposite the magnetic NA-bound bead mix.


2020 ◽  
Vol 10 (6) ◽  
pp. 780-787
Author(s):  
Hongyue Gao ◽  
Suna Li ◽  
Jicheng Liu ◽  
Wen Zhou ◽  
Fan Xu ◽  
...  

In this paper, we studied the holographic properties of liquid crystal (LC) thin film doped with carbon dots (CDs) which can be used as real-time holographic display screen. The maximum value of diffraction efficiency can reach up to 30% by using a low applied electric field 0.2 V/μm. Holograms in the LC film can be dynamically formed and self-erased. The hologram build-up time and the hologram self-erasure time in the material is fast enough to realize video refresh rate. In addition, the forming process of hologram was studied. The holographic diffraction efficiency was measured depending on the intensity of recording light, applied electric field, the intensity of readout light, and readout light polarization direction. Triple enhancement of the diffraction efficiency value by the modulation of voltage under the condition of low recording energy is presented. Therefore, we develop an easy way to obtain real-time dynamic holographic red, green and blue displays with high diffraction efficiency, which allow the LC film doped with CDs to be used as a holographic 3D display screen.


Sign in / Sign up

Export Citation Format

Share Document