Adhesion, phase morphology, and bondability of reacttvely-bonded and frit-bonded gold and silver thick-film conductors

1974 ◽  
Vol 3 (2) ◽  
pp. 553-577 ◽  
Author(s):  
T. T. Hitch
Keyword(s):  
Thick Film ◽  
Phase Morphology ◽  
Adhesion Phase

Scanning Electron Microscopy in Hybrid Microelectronics

1976 ◽  
Vol 34 ◽  
pp. 456-457
Author(s):  
S. Khadpe ◽  
R. Faryniak
Keyword(s):  
Integrated Circuits ◽  
Thick Film ◽  
Integrated Circuit ◽  
Failure Modes ◽  
Three Dimensional ◽  
Circuit Components ◽  
Hybrid Microcircuit ◽  
Electrical Connections ◽  
Scanning Electron

The Scanning Electron Microscope (SEM) is an important tool in Thick Film Hybrid Microcircuits Manufacturing because of its large depth of focus and three dimensional capability. This paper discusses some of the important areas in which the SEM is used to monitor process control and component failure modes during the various stages of manufacture of a typical hybrid microcircuit.Figure 1 shows a thick film hybrid microcircuit used in a Motorola Paging Receiver. The circuit consists of thick film resistors and conductors screened and fired on a ceramic (aluminum oxide) substrate. Two integrated circuit dice are bonded to the conductors by means of conductive epoxy and electrical connections from each integrated circuit to the substrate are made by ultrasonically bonding 1 mil aluminum wires from the die pads to appropriate conductor pads on the substrate. In addition to the integrated circuits and the resistors, the circuit includes seven chip capacitors soldered onto the substrate. Some of the important considerations involved in the selection and reliability aspects of the hybrid circuit components are: (a) the quality of the substrate; (b) the surface structure of the thick film conductors; (c) the metallization characteristics of the integrated circuit; and (d) the quality of the wire bond interconnections.

Synthesis and phase morphology investigation of simultaneous organic-inorganic IPNs based on diisocyanate, dimethacrylate, and water solution of sodium silicate

2015 ◽  
Vol 37 (2) ◽  
pp. 179-185 ◽  
Author(s):  
О.O. Brovko ◽  
◽  
L.A. Gorbach ◽  
О.D. Lutsyk ◽  
L.M. Sergeeva ◽  
...  
Keyword(s):  
Sodium Silicate ◽  
Water Solution ◽  
Phase Morphology

Fabrication of a Zn-Ferrite Thick Film Planar Power Inductor for DC-DC Converter LSI Package

2011 ◽  
Vol 131 (7) ◽  
pp. 484-489 ◽  
Author(s):  
Shinya Okazaki ◽  
Asako Takeuchi ◽  
Akihiro Takeshima ◽  
Makoto Sonehara ◽  
Toshiro Sato ◽  
...  
Keyword(s):  
Thick Film ◽  
Zn Ferrite ◽  
Power Inductor

Predicting the Effect of Tire Tread Pattern Design on Thick Film Wet Traction

1977 ◽  
Vol 5 (1) ◽  
pp. 6-28 ◽  
Author(s):  
A. L. Browne
Keyword(s):  
Experimental Data ◽  
Network Design ◽  
Thick Film ◽  
Digital Computer ◽  
Analytical Tool ◽  
Design Practice ◽  
Pattern Design ◽  
Performance Results ◽  
Good Agreement

Abstract An analytical tool is presented for the prediction of the effects of changes in tread pattern design on thick film wet traction performance. Results are reported for studies in which the analysis, implemented on a digital computer, was used to determine the effect of different tread geometry features, among these being the number, width, and lateral spacing of longitudinal grooves and the angle of zigzags in longitudinal grooves, on thick film wet traction. These results are shown to be in good agreement with experimental data appearing in the literature and are used to formulate guidelines for tread groove network design practice.

Direct Writing of Conventional Thick Film Inks Using MAPLE-DW Process

2006 ◽  
Vol 1 (1) ◽  
pp. 74-78 ◽  
Author(s):  
Xianfan Xu
Keyword(s):  
Thick Film ◽  
Direct Writing

Method of Detecting Trace Metal Contamination in Thick-Film SOI Device

2005 ◽  
Author(s):  
Yasunori Goto ◽  
Hiroomi Eguchi ◽  
Masaru Iida
Keyword(s):  
Trace Metal ◽  
Thick Film ◽  
Metal Contamination ◽  
Semiconductor Device ◽  
Trace Element Analysis ◽  
Silicon On Insulator ◽  
Element Analysis ◽  
Trace Metal Contamination ◽  
Trace Metal Elements ◽  
Output Characteristics

Abstract In the automotive IC using thick-film silicon on insulator (SOI) semiconductor device, if the gettering capability of a SOI wafer is inadequate, electrical characteristics degradation by metal contamination arises and the yield falls. At this time, an automotive IC was made experimentally for evaluation of the gettering capability as one of the purposes. In this IC, one of the output characteristics varied from the standard, therefore failure analysis was performed, which found trace metal elements as one of the causes. By making full use of 3D perspective, it is possible to fabricate a site-specific sample into 0.1 micrometre in thickness without missing a failure point that has very minute quantities of contaminant in a semiconductor device. Using energy dispersive X-ray, it is possible to detect trace metal contamination at levels 1E12 atoms per sq cm. that are conventionally detected only by trace element analysis.

Degradation Analysis of Thick Film Chip Resistors

2009 ◽  
Author(s):  
Bhanu Sood ◽  
Diganta Das ◽  
Michael H. Azarian ◽  
Michael Pecht
Keyword(s):  
Thick Film ◽  
Printed Circuit Board ◽  
Negative Resistance ◽  
Circuit Board ◽  
High Humidity ◽  
Circuit Boards ◽  
Chemical Modifications ◽  
Current Leakage ◽  
Printed Circuit ◽  
Degradation Analysis

Abstract Negative resistance drift in thick film chip resistors in high temperature and high humidity application conditions was investigated. This paper reports on the investigation of possible causes including formation of current leakage paths on the printed circuit board, delamination between the resistor protective coating and laser trim, and the possibility of silver migration or copper dendrite formation. Analysis was performed on a set of circuit boards exhibiting failures due to this phenomenon. Electrical tests after mechanical and chemical modifications showed that the drift was most likely caused by moisture ingress that created a conductive path across the laser trim.

Reduction in contact resistivity of Ag thick-film conductor on SiN x -coated Si wafer for solar cell using lead tellurite glass frit

2020 ◽  
Vol 59 (9) ◽  
pp. 090908
Author(s):  
Yusuke Tachibana ◽  
Akifumi Matsuda ◽  
Mamoru Yoshimoto
Keyword(s):  
Solar Cell ◽  
Thick Film ◽  
Tellurite Glass ◽  
Glass Frit ◽  
Contact Resistivity ◽  
Film Conductor ◽  
Si Wafer
Sign in / Sign up

Export Citation Format

Share Document