Growth of Fe-doped ZnO nanorods using aerosol-assisted chemical vapour deposition via in situ doping

Sequentially pulsed chemical vapour deposition was used to successfully deposit thin nanocrystalline films of copper(I) chloride using an atomic layer deposition system in order to investigate their application to UV optoelectronics. The films were deposited at 125 °C using [Bis(trimethylsilyl)acetylene](hexafluoroacetylacetonato)copper(I) as a Cu precursor and pyridine hydrochloride as a new Cl precursor. The films were analysed by XRD, X-ray photoelectron spectroscopy (XPS), SEM, photoluminescence, and spectroscopic reflectance. Capping layers of aluminium oxide were deposited in situ by ALD (atomic layer deposition) to avoid environmental degradation. The film adopted a polycrystalline zinc blende-structure. The main contaminants were found to be organic materials from the precursor. Photoluminescence showed the characteristic free and bound exciton emissions from CuCl and the characteristic exciton absorption peaks could also be detected by reflectance measurements.

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Silicon carbide emitter diodes by LPCVD (low-pressure chemical vapour deposition) using di-tert-butylsilane

Canadian Journal of Physics ◽

10.1139/p92-151 ◽

1992 ◽

Vol 70 (10-11) ◽

pp. 946-948

Author(s):

S. B. Hewitt ◽

S.-P. Tay ◽

N. G. Tarr ◽

A. R. Boothroyd

Keyword(s):

Chemical Vapour Deposition ◽

Vapour Deposition ◽

Chemical Vapour ◽

Low Pressure ◽

Silicon Substrates ◽

Phosphorus Doping ◽

Forward Current ◽

Pressure Chemical ◽

Sic Films

Stoichiometric SiC films formed by low-pressure chemical vapour deposition from a di-tert-butylsilane source with in situ phosphorus doping from tert-butylphosphine were used as emitters in heterojunction diodes fabricated on lightly doped silicon substrates. Diode characteristics are nearly ideal, with forward current dominated by injection-diffusion in the silicon substrate.

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Effect of Deposition Temperature on Self-Catalyzed ZnO Nanorods via Chemical Vapour Deposition Method

Indonesian Journal of Electrical Engineering and Computer Science ◽

10.11591/ijeecs.v11.i1.pp209-214 ◽

2018 ◽

Vol 11 (1) ◽

pp. 209 ◽

Cited By ~ 1

Author(s):

Shafinaz Sobihana Shariffudin ◽

Puteri Sarah Mohamad Saad ◽

Hashimah Hashim ◽

Mohamad Hafiz Mamat

Keyword(s):

Chemical Vapour Deposition ◽

Deposition Temperature ◽

Vapour Deposition ◽

Zno Nanorods ◽

Chemical Vapour ◽

Catalyst Layer ◽

Deposition Method ◽

Current Increase ◽

Axis Orientation ◽

Chemical Vapour Deposition Method

The morphological, structural, optical and electrical properties of ZnO nanorods are investigated as a function of deposition temperature. The ZnO nanorods were grown on ZnO seed catalyst layer at temperatures between 750oC – 825oC using thermal chemical vapour deposition method. Sample deposited at 825oC showed the highest crystalline orientation. The FE-SEM micrographs and the intense peak along (002) direction in the XRD spectra of this sample implied that the nanorods possess c-axis orientation. PL spectra showed two common ZnO peaks which centered at 380 nm and 540 nm. Two-point probe I-V measurement revealed ohmic behaviour with the gold metal contact, whereby the current increase with the deposition temperature.

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In situ characterization of a plasma metalorganic chemical vapour deposition process

Surface and Coatings Technology ◽

10.1016/0257-8972(94)90244-5 ◽

1994 ◽

Vol 68-69 ◽

pp. 719-723 ◽

Cited By ~ 1

Author(s):

F. Richter ◽

S. Peter ◽

R. Pintaske ◽

G. Hecht

Keyword(s):

Chemical Vapour Deposition ◽

Vapour Deposition ◽

Chemical Vapour ◽

Deposition Process ◽

In Situ Characterization ◽

Chemical Vapour Deposition Process ◽

Metalorganic Chemical Vapour Deposition ◽

Metalorganic Chemical

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Aluminium/gallium, indium/gallium, and aluminium/indium co-doped ZnO thin films deposited via aerosol assisted CVD

Journal of Materials Chemistry C ◽

10.1039/c7tc04003b ◽

2018 ◽

Vol 6 (3) ◽

pp. 588-597 ◽

Cited By ~ 38

Author(s):

Dominic B. Potter ◽

Michael J. Powell ◽

Ivan P. Parkin ◽

Claire J. Carmalt

Keyword(s):

Thin Films ◽

Chemical Vapour Deposition ◽

Vapour Deposition ◽

Chemical Vapour ◽

Zno Thin Films ◽

Glass Substrates ◽

Doped Zno ◽

Indium Gallium ◽

Co Doped

Aluminium/gallium co-doped ZnO (AGZO), indium/gallium co-doped ZnO (IGZO), and aluminium/indium co-doped ZnO (AIZO) thin films were synthesised on glass substrates via aerosol assisted chemical vapour deposition (AACVD).

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In Situ Doping of Nitrogen in -Oriented Bulk 3C-SiC by Halide Laser Chemical Vapour Deposition

Materials ◽

10.3390/ma13020410 ◽

2020 ◽

Vol 13 (2) ◽

pp. 410

Author(s):

Youfeng Lai ◽

Lixue Xia ◽

Qingfang Xu ◽

Qizhong Li ◽

Kai Liu ◽

...

Keyword(s):

Electrical Conductivity ◽

Chemical Vapour Deposition ◽

High Speed ◽

Vapour Deposition ◽

Volume Fraction ◽

Chemical Vapour ◽

Optical Transmittance ◽

Undoped Sample ◽

Maximum Value

Doping of nitrogen is a promising approach to improve the electrical conductivity of 3C-SiC and allow its application in various fields. N-doped, <110>-oriented 3C-SiC bulks with different doping concentrations were prepared via halide laser chemical vapour deposition (HLCVD) using tetrachlorosilane (SiCl4) and methane (CH4) as precursors, along with nitrogen (N2) as a dopant. We investigated the effect of the volume fraction of nitrogen (ϕN2) on the preferred orientation, microstructure, electrical conductivity (σ), deposition rate (Rdep), and optical transmittance. The preference of 3C-SiC for the <110> orientation increased with increasing ϕN2. The σ value of the N-doped 3C-SiC bulk substrates first increased and then decreased with increasing ϕN2, reaching a maximum value of 7.4 × 102 S/m at ϕN2 = 20%. Rdep showed its highest value (3000 μm/h) for the undoped sample and decreased with increasing ϕN2, reaching 1437 μm/h at ϕN2 = 30%. The transmittance of the N-doped 3C-SiC bulks decreased with ϕN2 and showed a declining trend at wavelengths longer than 1000 nm. Compared with the previously prepared <111>-oriented N-doped 3C-SiC, the high-speed preparation of <110>-oriented N-doped 3C-SiC bulks further broadens its application field.

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