A novel method for determining Young’s modulus of thin films by micro-strain gauges

2005 ◽  
Vol 11 (2-3) ◽  
pp. 151-157
Author(s):  
Chi Hsiang Pan
Keyword(s):  
Thin Films ◽  
Young’S Modulus ◽  
Young's Modulus ◽  
Strain Gauges ◽  
Novel Method

scholarly journals Out-of-Plane Thermal Expansion Coefficient and Biaxial Young’s Modulus of Sputtered ITO Thin Films

Coatings ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 153
Author(s):  
Chuen-Lin Tien ◽  
Tsai-Wei Lin
Keyword(s):  
Thin Films ◽  
Thermal Expansion ◽  
Thermal Stress ◽  
Young’S Modulus ◽  
Thermal Expansion Coefficient ◽  
Expansion Coefficient ◽  
Young's Modulus ◽  
Heating Temperature ◽  
Glass Substrates ◽  
Ito Thin Films

This paper proposes a measuring apparatus and method for simultaneous determination of the thermal expansion coefficient and biaxial Young’s modulus of indium tin oxide (ITO) thin films. ITO thin films simultaneously coated on N-BK7 and S-TIM35 glass substrates were prepared by direct current (DC) magnetron sputtering deposition. The thermo-mechanical parameters of ITO thin films were investigated experimentally. Thermal stress in sputtered ITO films was evaluated by an improved Twyman–Green interferometer associated with wavelet transform at different temperatures. When the heating temperature increased from 30 °C to 100 °C, the tensile thermal stress of ITO thin films increased. The increase in substrate temperature led to the decrease of total residual stress deposited on two glass substrates. A linear relationship between the thermal stress and substrate heating temperature was found. The thermal expansion coefficient and biaxial Young’s modulus of the films were measured by the double substrate method. The results show that the out of plane thermal expansion coefficient and biaxial Young’s modulus of the ITO film were 5.81 × 10−6 °C−1 and 475 GPa.

Microbridge Testing of Thin Films Under Small Deformation

1999 ◽  
Vol 594 ◽  
Author(s):  
T. Y. Zhang ◽  
Y. J. Su ◽  
C. F. Qian ◽  
M. H. Zhao ◽  
L. Q. Chen
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Silicon Nitride ◽  
Young’S Modulus ◽  
Young's Modulus ◽  
Chemical Vapor ◽  
Small Deformation ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Pressure Chemical

AbstractThe present work proposes a novel microbridge testing method to simultaneously evaluate the Young's modulus, residual stress of thin films under small deformation. Theoretic analysis and finite element calculation are conducted on microbridge deformation to provide a closed formula of deflection versus load, considering both substrate deformation and residual stress in the film. Silicon nitride films fabricated by low pressure chemical vapor deposition on silicon substrates are tested to demonstrate the proposed method. The results show that the Young's modulus and residual stress for the annealed silicon nitride film are respectively 202 GPa and 334.9 MPa.

Size- and temperature-dependent Young's modulus and size-dependent thermal expansion coefficient of thin films

2016 ◽  
Vol 18 (31) ◽  
pp. 21508-21517 ◽  
Author(s):  
Xiao-Ye Zhou ◽  
Bao-Ling Huang ◽  
Tong-Yi Zhang
Keyword(s):  
Thin Films ◽  
Thermal Expansion ◽  
Young’S Modulus ◽  
Thermal Expansion Coefficient ◽  
Expansion Coefficient ◽  
Material Properties ◽  
Essential Role ◽  
Young's Modulus ◽  
Temperature Dependent ◽  
Size Dependent

Surfaces of nanomaterials play an essential role in size-dependent material properties.

scholarly journals Measurment of Young's Modulus and Stress Analysis of Magnetic Thin Films.

1994 ◽  
Vol 60 (572) ◽  
pp. 1108-1113
Author(s):  
Hidetoshi Yanai ◽  
Nobuyuki Kishine ◽  
Yukari Komaba ◽  
Yukitaka Murakami
Keyword(s):  
Thin Films ◽  
Stress Analysis ◽  
Young’S Modulus ◽  
Young's Modulus ◽  
Magnetic Thin Films

Investigation into Hardness and Young’s Modulus of Thin Films of Lead Germanium Telluride

2012 ◽  
Vol 455-456 ◽  
pp. 8-12 ◽  
Author(s):  
Bin Li ◽  
Ping Xie ◽  
Su Ying Zhang ◽  
Ding Quan Liu
Keyword(s):  
Thin Films ◽  
Young’S Modulus ◽  
Ferroelectric Phase ◽  
Young's Modulus ◽  
Strength Loss ◽  
Electron Beam Evaporation ◽  
Silicon Substrates ◽  
Strain Fields ◽  
Germanium Telluride ◽  
Nanoindentation Measurement

A mechanically robust infrared high-index coating material is essential to the infrared interference coatings. Lead germanium telluride (Pb1-xGexTe) is a pseudo-binary alloy of IV-VI narrow gap semiconductors of PbTe and GeTe. In our investigation, the hardness and Young’s modulus of thin films of Pb1-xGexTe, which were deposited on silicon substrates using electron beam evaporation, were identified by means of nanoindentation measurement. It is demonstrated that layers of Pb1-xGexTe have greater hardness and Young’s modulus compared with those of PbTe. These mechanical behaviors of layers can be linked to a ferroelectric phase transition from a cubic paraelectric phase to a rhombohedral, ferroelectric phase. Moreover, the strength loss in the layers of Pb1-xGexTe can be also explained in light of strong localized elastic-strain fields in concentrated solid solutions.

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