Refractive index variation of amorphous Ta2O5 film fabricated by ion beam sputtering with RF bias power

Scandium oxide (Sc2O3) thin films with different numbers of oxygen defects were prepared by ion-beam sputtering under different oxygen flow rates. The results showed that the oxygen defects heavily affected crystal phases, optical properties, laser-induced damage threshold (LIDT) and surface quality of Sc2O3 films. The thin film under 0 standard-state cubic centimeter per minute (sccm) oxygen flow rate had the largest number of oxygen defects, which resulted in the lowest transmittance, LIDT and the worst surface quality. In addition, the refractive index of 0 sccm Sc2O3 film could not be measured in the same way. When the oxygen flow rate was 15 sccm, the Sc2O3 film possessed the best transmittance, refractive index, LIDT and surface roughness due to the lowest number of oxygen defects. This work elucidated the relationship between oxygen defects and properties of Sc2O3 films. Controlling oxygen flow rate was an important step of limiting the number of oxygen defects, which is of great significance for industrial production.

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Physical mechanism of refractive index inhomogeneity of hafnium oxide thin film prepared by ion beam sputtering technique

Optical Materials ◽

10.1016/j.optmat.2017.10.007 ◽

2018 ◽

Vol 75 ◽

pp. 135-141 ◽

Cited By ~ 1

Author(s):

Huasong Liu ◽

Lishuan Wang ◽

Shida Li ◽

Yugang Jiang ◽

Dandan Liu ◽

...

Keyword(s):

Thin Film ◽

Refractive Index ◽

Hafnium Oxide ◽

Physical Mechanism ◽

Ion Beam ◽

Oxide Thin Film ◽

Ion Beam Sputtering ◽

Beam Sputtering

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Change of Refractive Index and Residual Stresses of Ta2O5Thin Film Prepared by Dual Ion Beam Sputtering Deposition as the Substrate Temperature and Assist ion Beam Energy

Journal of the Korean Ceramic Society ◽

10.4191/kcers.2005.42.1.028 ◽

2005 ◽

Vol 42 (1) ◽

pp. 28-32 ◽

Cited By ~ 1

Keyword(s):

Refractive Index ◽

Residual Stresses ◽

Substrate Temperature ◽

Beam Energy ◽

Ion Beam ◽

Ion Beam Sputtering ◽

Sputtering Deposition ◽

Beam Sputtering ◽

Dual Ion Beam Sputtering

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Direct Observations of the Epitaxial Growth of Sputtered Ag on Si

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100071053 ◽

1973 ◽

Vol 31 ◽

pp. 122-123

Author(s):

J. S. Maa ◽

Thos. E. Hutchinson

Keyword(s):

Epitaxial Growth ◽

Film Growth ◽

Ion Beam ◽

Ion Beam Sputtering ◽

Microscopy Technique ◽

Direct Observations ◽

In Situ Electron Microscopy ◽

Beam Sputtering ◽

The Subject

The growth of Ag films deposited on various substrate materials such as MoS2, mica, graphite, and MgO has been investigated extensively using the in situ electron microscopy technique. The three stages of film growth, namely, the nucleation, growth of islands followed by liquid-like coalescence have been observed in both the vacuum vapor deposited and ion beam sputtered thin films. The mechanisms of nucleation and growth of silver films formed by ion beam sputtering on the (111) plane of silicon comprise the subject of this paper. A novel mode of epitaxial growth is observed to that seen previously.The experimental arrangement for the present study is the same as previous experiments, and the preparation procedure for obtaining thin silicon substrate is presented in a separate paper.

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TEM Study of Co/Pd and Co/Au Multilayers

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100151015 ◽

1993 ◽

Vol 51 ◽

pp. 1036-1037

Author(s):

A.E.M. De Veirman ◽

F.J.G. Hakkens ◽

W.M.J. Coene ◽

F.J.A. den Broeder

Keyword(s):

Magnetic Anisotropy ◽

Ion Beam ◽

Perpendicular Magnetic Anisotropy ◽

Optical Recording ◽

Magnetic Multilayer ◽

Ion Beam Sputtering ◽

Cross Sectional ◽

Transmission Electron ◽

Beam Sputtering ◽

Substrate Temperatures

There is currently great interest in magnetic multilayer (ML) thin films (see e.g.), because they display some interesting magnetic properties. Co/Pd and Co/Au ML systems exhibit perpendicular magnetic anisotropy below certain Co layer thicknesses, which makes them candidates for applications in the field of magneto-optical recording. It has been found that the magnetic anisotropy of a particular system strongly depends on the preparation method (vapour deposition, sputtering, ion beam sputtering) as well as on the substrate, underlayer and deposition temperature. In order to get a better understanding of the correlation between microstructure and properties a thorough cross-sectional transmission electron microscopy (XTEM) study of vapour deposited Co/Pd and Co/Au (111) MLs was undertaken (for more detailed results see ref.).The Co/Pd films (with fixed Pd thickness of 2.2 nm) were deposited on mica substrates at substrate temperatures Ts of 20°C and 200°C, after prior deposition of a 100 nm Pd underlayer at 450°C.

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Nanocrystalline silicon ( nc-Si ) from single ion beam sputtering

MRS Proceedings ◽

10.1557/proc-762-a7.3 ◽

2003 ◽

Vol 762 ◽

Cited By ~ 1

Author(s):

Z.B. Zhou ◽

G.M. Hadi ◽

R.Q. Cui ◽

Z.M. Ding ◽

G. Li

Keyword(s):

Solar Cell ◽

Ion Beam ◽

Nanocrystalline Silicon ◽

Silicon Films ◽

Chamber Pressure ◽

Ion Beam Sputtering ◽

High Hydrogen ◽

Beam Sputtering ◽

Si Films ◽

Nanocrystalline Silicon Films

AbstractBased on a small set of selected publications on the using of nanocrystalline silicon films (nc-Si) for solar cell from 1997 to 2001, this paper reviews the application of nc-Si films as intrinsic layers in p-i-n solar cells. The new structure of nc-Si films deposited at high chamber pressure and high hydrogen dilution have characters of nanocrystalline grains with dimension about several tens of nanometer embedded in matrix of amorphous tissue and a high volume fraction of crystallinity (60~80%). The new nc-Si material have optical gap of 1.89 eV. The efficiency of this single junction solar cell reaches 8.7%. This nc-Si layer can be used not only as an intrinsic layer and as a p-type layer. Also nanocrystalline layer may be used as a seed layer for the growth of polycrystalline Si films at a low temperature.We used single ion beam sputtering methods to synthesize nanocrystalline silicon films successfully. The films were characterized with the technique of X-ray diffraction, Atomic Force Micrographs. We found that the films had a character of nc-amorphous double phase structure. Conductivity test at different temperatures presented the transportation of electrons dominated by different mechanism within different temperature ranges. Photoconductivity gains of the material were obtained in our recent investigation.

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Formation of Luminescent Si Nanocrystals by High-Temperature Annealing of Ion-Beam-Sputtered Si/SiO2 Multilayers

MRS Proceedings ◽

10.1557/proc-775-p9.57 ◽

2003 ◽

Vol 775 ◽

Author(s):

Suk-Ho Choi ◽

Jun Sung Bae ◽

Kyung Jung Kim ◽

Dae Won Moon

Keyword(s):

Quantum Confinement ◽

Radiative Recombination ◽

Ion Beam ◽

Quantum Confinement Effect ◽

Visible Range ◽

Ion Beam Sputtering ◽

Transmission Electron ◽

Si Nanocrystals ◽

Beam Sputtering ◽

Microscopy Images

AbstractSi/SiO2 multilayers (MLs) have been prepared under different deposition temperatures (TS) by ion beam sputtering. The annealing at 1200°C leads to the formation of Si nanocrystals in the Si layer of MLs. The high resolution transmission electron microscopy images clearly demonstrate the existence of Si nanocrystals, which exhibit photoluminescence (PL) in the visible range when TS is ≥ 300°C. This is attributed to well-separation of nanocrystals in the higher-TS samples, which is thought to be a major cause for reducing non-radiative recombination in the interface between Si nanocrystal and surface oxide. The visible PL spectra are enhanced in its intensity and are shifted to higher energy by increasing TS. These PL behaviours are consistent with the quantum confinement effect of Si nanocrystals.

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