scholarly journals Relationship between Oxygen Defects and Properties of Scandium Oxide Films Prepared by Ion-Beam Sputtering

Coatings ◽  
2019 ◽  
Vol 9 (8) ◽  
pp. 517
Author(s):  
Pengfei Kong ◽  
Yunti Pu ◽  
Ping Ma ◽  
Jiliang Zhu
Keyword(s):  
Refractive Index ◽  
Surface Quality ◽  
Flow Rate ◽  
Ion Beam ◽  
Oxygen Flow Rate ◽  
Scandium Oxide ◽  
Oxygen Flow ◽  
Ion Beam Sputtering ◽  
Oxygen Defects ◽  
Beam Sputtering

Scandium oxide (Sc2O3) thin films with different numbers of oxygen defects were prepared by ion-beam sputtering under different oxygen flow rates. The results showed that the oxygen defects heavily affected crystal phases, optical properties, laser-induced damage threshold (LIDT) and surface quality of Sc2O3 films. The thin film under 0 standard-state cubic centimeter per minute (sccm) oxygen flow rate had the largest number of oxygen defects, which resulted in the lowest transmittance, LIDT and the worst surface quality. In addition, the refractive index of 0 sccm Sc2O3 film could not be measured in the same way. When the oxygen flow rate was 15 sccm, the Sc2O3 film possessed the best transmittance, refractive index, LIDT and surface roughness due to the lowest number of oxygen defects. This work elucidated the relationship between oxygen defects and properties of Sc2O3 films. Controlling oxygen flow rate was an important step of limiting the number of oxygen defects, which is of great significance for industrial production.

Effect of oxygen flow rate on microstructure properties of SiO2 thin films prepared by ion beam sputtering

2018 ◽  
Vol 482 ◽  
pp. 203-207 ◽  
Author(s):  
Lishuan Wang ◽  
Yugang Jiang ◽  
Chenghui Jiang ◽  
Huasong Liu ◽  
Yiqin Ji ◽  
...  
Keyword(s):  
Thin Films ◽  
Flow Rate ◽  
Ion Beam ◽  
Oxygen Flow Rate ◽  
Oxygen Flow ◽  
Ion Beam Sputtering ◽  
Beam Sputtering ◽  
Effect Of Oxygen

Indium Tin Oxide Thin Films Deposited at Low Temperature Using Dual Ion Beam Sputtering

2014 ◽  
Vol 1699 ◽  
Author(s):  
Wilhelmus J. Geerts ◽  
Nelson A. Simpson ◽  
Alan D. Woodall ◽  
Maclyn Stuart Compton
Keyword(s):  
Flow Rate ◽  
Indium Tin Oxide ◽  
Atomic Oxygen ◽  
Ion Beam ◽  
Oxygen Flow Rate ◽  
Oxygen Flow ◽  
Visible Range ◽  
Ion Beam Sputtering ◽  
Beam Sputtering ◽  
Dual Ion Beam Sputtering

ABSTRACTITO samples were sputtered at room temperature by ion assisted dual ion beam sputtering using atomic or molecular oxygen. The electrical properties appear to depend on the oxygen flow rate during deposition and the resistivity decreases for samples sputtered at a higher oxygen flow rate (1-5 sccm). The resistivity is lowest at an oxygen flow rate of 4 sccm. The average absorption in the visible part of the spectrum also decreases as a function of the oxygen flow rate and is lower for samples sputtered with atomic oxygen. The figure of merit, i.e. the ratio of the conductivity versus the average absorption in the visible range, increases for higher oxygen flow rates and is typically 20-60% higher for samples sputtered using an atomic oxygen assist beam.

Study on the Surface Quality of Al2O3 Nano-Films by Ion Beam Sputtering Deposition

2011 ◽  
Vol 148-149 ◽  
pp. 54-57
Author(s):  
Xiao Ping Lin ◽  
Yun Dong ◽  
Lian Wei Yang
Keyword(s):  
Surface Quality ◽  
Ion Beam ◽  
Three Dimensional ◽  
Ion Beam Sputtering ◽  
Sputtering Deposition ◽  
Atomic Force ◽  
Beam Sputtering ◽  
Dimensional Growth ◽  
Different Thickness

The Al2O3 nano-films of different thicknesses (1~100nm) were successfully deposited on the monocrystalline Si surface by using ion beam sputtering deposition. The surface topography and the component of nano-films with different thickness were analyzed. The quality of the surface of nano-films was systematically studied. When the films’ thickness increase, the studies by atomic force microscope (AFM), X-ray photoelectron spectrum（XPS） show that the gathering grain continually grows up and transits from acerose cellula by two-dimensional growth to globularity by three-dimensional growth. The elements O, Al and Si were found on the surface of Al2O3 nano-films. With the thickness of the films increasing, the content of Al gradually increases and the intensity peak of Si wears off, the surface quality of the deposited films is ceaselessly improved

Refractive index variation of amorphous Ta2O5 film fabricated by ion beam sputtering with RF bias power

2009 ◽  
Vol 16 (3) ◽  
pp. 274-275 ◽  
Author(s):  
Chen Yang Huang ◽  
Hao Min Ku ◽  
Yi Ping Tsai ◽  
Wei Kai Chen ◽  
Shiuh Chao
Keyword(s):  
Refractive Index ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Bias Power ◽  
Refractive Index Variation ◽  
Ta2o5 Film ◽  
Index Variation ◽  
Beam Sputtering

Physical mechanism of refractive index inhomogeneity of hafnium oxide thin film prepared by ion beam sputtering technique

2018 ◽  
Vol 75 ◽  
pp. 135-141 ◽  
Author(s):  
Huasong Liu ◽  
Lishuan Wang ◽  
Shida Li ◽  
Yugang Jiang ◽  
Dandan Liu ◽  
...  
Keyword(s):  
Thin Film ◽  
Refractive Index ◽  
Hafnium Oxide ◽  
Physical Mechanism ◽  
Ion Beam ◽  
Oxide Thin Film ◽  
Ion Beam Sputtering ◽  
Beam Sputtering
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